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Lan Y, Sun Z, Yuan C, Xue X, Chen J, Miao L, Guo Y, Zhou C, Xu J, Zhou J, Wang J, Rao G. Enhanced Visible Photocatalytic Hydrogen Evolution of KN-Based Semiconducting Ferroelectrics via Band-Gap Engineering and High-Field Poling. ACS APPLIED MATERIALS & INTERFACES 2022; 14:8916-8930. [PMID: 35138789 DOI: 10.1021/acsami.1c20448] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
In various ferroelectric-based photovoltaic materials after low-band-gap engineering, the process by which high-field polarization induces the depolarizing electric field (Edp) to accelerate the electron-hole pair separation in the visible light photocatalytic process is still a great challenge. Herein, a series of semiconducting KN-based ferroelectric catalytic materials with narrow multi-band gaps and high-field polarization capabilities are obtained through the Ba, Ni, and Bi co-doping strategy. Stable Edp caused by high-field poling enhanced the visible photocatalytic hydrogen evolution in a 0.99KN-0.01BNB sample with a narrow band gap and optimal ferroelectricity, which can be 5.4 times higher than that of the unpoled sample. The enhanced photocatalytic hydrogen evolution rate can be attributed to the synergistic effect of the significant reduction of the band gap and the high-field-polarization-induced Edp. The change in the band position in the poled sample further reveals that high-field poling may accelerate the migration of carriers through band bending. Insights into the mechanism by which catalytic activity is enhanced through high-field-polarization-induced Edp may pave the way for further development of ferroelectric-based catalytic materials in the photocatalytic field.
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Affiliation(s)
- Yuchen Lan
- Guangxi Key Laboratory of Information Materials, School of Material Science and Engineering, Guilin University of Electronic Technology, Guilin 541004, PR China
| | - Zhihai Sun
- Guangxi Key Laboratory of Information Materials, School of Material Science and Engineering, Guilin University of Electronic Technology, Guilin 541004, PR China
| | - Changlai Yuan
- Guangxi Key Laboratory of Information Materials, School of Material Science and Engineering, Guilin University of Electronic Technology, Guilin 541004, PR China
- School of Mathematics and Physics, University of Science and Technology Beijing, Beijing 100083, PR China
| | - Xiaogang Xue
- Guangxi Key Laboratory of Information Materials, School of Material Science and Engineering, Guilin University of Electronic Technology, Guilin 541004, PR China
| | - Jun Chen
- School of Mathematics and Physics, University of Science and Technology Beijing, Beijing 100083, PR China
| | - Lei Miao
- Guangxi Key Laboratory of Information Materials, School of Material Science and Engineering, Guilin University of Electronic Technology, Guilin 541004, PR China
- Department of Materials Science and Engineering, SIT Research Laboratories, Innovative Global Program, Faculty of Engineering, Shibaura Institute of Technology, Tokyo 1358548, Japan
| | - Yiping Guo
- State Key Laboratory of Metal Matrix Composites, School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai 200240, PR China
| | - Changrong Zhou
- Guangxi Key Laboratory of Information Materials, School of Material Science and Engineering, Guilin University of Electronic Technology, Guilin 541004, PR China
| | - Jiwen Xu
- Guangxi Key Laboratory of Information Materials, School of Material Science and Engineering, Guilin University of Electronic Technology, Guilin 541004, PR China
| | - Jianhua Zhou
- Guangxi Key Laboratory of Information Materials, School of Material Science and Engineering, Guilin University of Electronic Technology, Guilin 541004, PR China
| | - Jiang Wang
- Guangxi Key Laboratory of Information Materials, School of Material Science and Engineering, Guilin University of Electronic Technology, Guilin 541004, PR China
| | - Guanghui Rao
- Guangxi Key Laboratory of Information Materials, School of Material Science and Engineering, Guilin University of Electronic Technology, Guilin 541004, PR China
- Institute of Physics, Chinese Academy of Sciences, Beijing 100190, PR China
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Lan Y, Tang W, Yuan C, Xue XG, Liu X, Zhu B, Meng L, Zhou C, Liu F, Xu J, Wang J, Rao G. High-field polarization boosting visible-light photocatalytic H 2 evolution of narrow-bandgap semiconducting (1 − x)KNbO 3– xBa(Ni 1/2Nb 1/2)O 3−δ ferroelectric ceramics. NEW J CHEM 2021. [DOI: 10.1039/d1nj03796j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
The photocatalytic H2 evolution of semiconducting KN-based ferroelectrics and its further boosting via a high-field polarization has been studied.
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Affiliation(s)
- Yuchen Lan
- College of Material Science and Engineering, Guilin University of Electronic Technology, Guilin 541004, P. R. China
| | - Wenbin Tang
- College of Material Science and Engineering, Guilin University of Electronic Technology, Guilin 541004, P. R. China
| | - Changlai Yuan
- College of Material Science and Engineering, Guilin University of Electronic Technology, Guilin 541004, P. R. China
- Guangxi Key Laboratory of Information Materials, Guilin University of Electronic Technology, Guilin 541004, P. R. China
| | - Xiao Gang Xue
- College of Material Science and Engineering, Guilin University of Electronic Technology, Guilin 541004, P. R. China
| | - Xiao Liu
- College of Material Science and Engineering, Guilin University of Electronic Technology, Guilin 541004, P. R. China
| | - Baohua Zhu
- College of Material Science and Engineering, Guilin University of Electronic Technology, Guilin 541004, P. R. China
| | - Liufang Meng
- College of Material Science and Engineering, Guilin University of Electronic Technology, Guilin 541004, P. R. China
| | - Changrong Zhou
- College of Material Science and Engineering, Guilin University of Electronic Technology, Guilin 541004, P. R. China
| | - Fei Liu
- School of Mechanical and Electrical Engineering, Guilin University of Electronic Technology, Guilin 541004, P. R. China
| | - Jiwen Xu
- College of Material Science and Engineering, Guilin University of Electronic Technology, Guilin 541004, P. R. China
| | - Jiang Wang
- College of Material Science and Engineering, Guilin University of Electronic Technology, Guilin 541004, P. R. China
| | - Guanghui Rao
- College of Material Science and Engineering, Guilin University of Electronic Technology, Guilin 541004, P. R. China
- Institute of Physics, Chinese Academy of Sciences, P. R. China
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