Mixture of quantum dots and ZnS nanoparticles as emissive layer for improved quantum dots light emitting diodes

Modulation of sunflower growth via regulation of antioxidants, oil content and gas exchange by arbuscular mycorrhizal fungi and quantum dot biochar under chromium stress

Chromium (Cr) toxicity significantly threatens sunflower growth and productivity by interfering with enzymatic activity and generating reactive oxygen species (ROS). Zinc quantum dot biochar (ZQDB) and arbuscular mycorrhizal fungi (AMF) have become popular to resolve this issue. AMF can facilitate root growth, while biochar tends to minimize Cr mobility in soil. The current study aimed to explore AMF and ZQDB combined effects on sunflower plants in response to Cr toxicity. Four treatments were applied, i.e. NoAMF + NoZQDB, AMF + 0.40%ZQDB, AMF + 0.80%ZQDB, and AMF + 1.20%ZQDB, under different stress levels of Cr, i.e. no Cr (control), 150 and 200 mg Cr/kg soil. Results showed that AMF + 1.20%ZQDB was the treatment that caused the greatest improvement in plant height, stem diameter, head diameter, number of leaves per plant, achenes per head, 1000 achenes weight, achene yield, biological yield, transpiration rate, stomatal conductance, chlorophyll content and oleic acid, relative to the condition NoAMF + No ZQDB at 200 mg Cr/kg soil. A significant decline in peroxidase (POD), superoxide dismutase (SOD), and catalase (CAT) while improvement in ascorbate peroxidase (APx), oil content, and protein content further supported the effectiveness of AMF + 1.20%ZQDB against Cr toxicity. Our results suggest that the treatment AMF + 1.20%ZQDB can efficiently alleviate Cr stress in sunflowers.

Tuning the optical properties of high quantum-yield g-C3N4 with the inclusion of ZnS via FRET for high electron-hole recombination

Luminescent polymeric graphitic composites have the potential to be efficient energy converters for sophisticated displays and light sources. Thermal condensation is used to synthesize g-C₃N₄-ZnS composites. The XRD, and FTIR analyses confirmed the synthesis of the pure host, filler, and composites. FESEM, and TEM images revealed that the ZnS nanosheets were evenly distributed over the g-C₃N₄ sheets. As a result of ZnS incorporation, the melting point of g-C₃N₄ has been raised to 748.5 °C, and the thermal stability of gZ has been increased by 27 %. The optimized gZ15 band gap is determined to be 2.98 eV with a crystallite size of 4.2 nm and a micro stain of 35.42 × 10^-3. With a purity of 63.4 %, gZ15 demonstrated a significant rate of recombination in the blue region. gZ15 has a high PLQY of 98 % and a FRET efficiency of 92%. All of the improved properties demonstrated that polymeric g-C₃N₄-ZnS was the optimum materials for usage in the active or emissive layer of optoelectronic devices.

Influence of Ag+ and Mn2+ ions on structural, optical and photoluminescence features of ZnS quantum dots

The current study deals with the structural, morphological, elemental, optical and photoluminescence behaviors of Ag⁺, Mn²⁺ dual doped ZnS quantum dots (QDs). The X-ray diffraction (XRD) and Transmission Electron Microscope (TEM) studies confirmed the cubic structure and size of the crystallites (~2 nm). The Scanning Electron Microscope (SEM) photographs portrayed the surface and morphological structure of prepared samples. Energy dispersive X-ray (EDX) and Fourier Transform Infrared Spectra (FTIR) ensured the presence of Zn, Ag, Mn and, S in the samples as per the anticipated stoichiometry ratio. The UV-visible spectra showed a red shift in optical absorption and band gap gets narrowed due to the incorporation of Ag⁺ ions. The size effect has overcome the quantum confinement effect in this case. Through photoluminescence (PL) studies, a weak UV emission and strong red wavelength emissions were received and discussed on the basis of sulfur vacancies. This red emission was dealt in terms of d-electrons transition between host and dopant ions.