Strain engineering on the electronic states of two-dimensional GaN/graphene heterostructure

Computational investigations of the metal/semiconductor NbS2/boron phosphide van der Waals heterostructure: effects of an electric field

In this work, we design computationally the metal-semiconductor NbS2/BP heterostructure and investigate its atomic structure, electronic properties and contact barrier using first-principles prediction. Our results show that the M-S NbS2/BP heterostructure is energetically stable and is characterized by weak vdW interactions. Interestingly, we find that the combination of the metallic NbS2 and semiconducting BP layers leads to the formation of a M-S contact. The M-S NbS2/BP heterostructure exhibits a p-type Schottky contact and a low tunneling-specific resistivity of 3.98 × 10-10 Ω cm2, indicating that the metallic NbS2 can be considered as an efficient 2D electrical contact to the semiconducting BP layer to design NbS2/BP heterostructure-based electronic devices with high charge injection efficiency. The contact barrier and contact type in the M-S NbS2/BP heterostructure can be adjusted by applying an external electric field. The conversion from p-type ShC to n-type ShC can be achieved by applying a negative electric field, while the transformation from ShC to OhC type can be achieved under the application of a positive electric field. The conversion between p-type and n-type ShC and ShC to OhC type in the NbS2/BP heterostructure demonstrates that it can be considered as a promising material for next-generation electronic devices.

Tunable Electronic Properties, Carrier Mobility, and Contact Characteristics in Type-II BSe/Sc2CF2 Heterostructures toward Next-Generation Optoelectronic Devices

Conducting heterostructures have emerged as a promising strategy to enhance physical properties and unlock the potential application of such materials. Herein, we conduct and investigate the electronic and transport properties of the BSe/Sc2CF2 heterostructure using first-principles calculations. The BSe/Sc2CF2 heterostructure is structurally and thermodynamically stable, indicating that it can be feasible for further experiments. The BSe/Sc2CF2 heterostructure exhibits a semiconducting behavior with an indirect band gap and possesses type-II band alignment. This unique alignment promotes efficient charge separation, making it highly promising for device applications, including solar cells and photodetectors. Furthermore, type-II band alignment in the BSe/Sc2CF2 heterostructure leads to a reduced band gap compared to the individual BSe and Sc2CF2 monolayers, leading to enhanced charge carrier mobility and light absorption. Additionally, the generation of the BSe/Sc2CF2 heterostructure enhances the transport properties of the BSe and Sc2CF2 monolayers. The electric fields and strains can modify the electronic properties, thus expanding the potential application possibilities. Both the electric fields and strains can tune the band gap and lead to the type-II to type-I conversion in the BSe/Sc2CF2 heterostructure. These findings shed light on the versatile nature of the BSe/Sc2CF2 heterostructure and its potential for advanced nanoelectronic and optoelectronic devices.

The First-Principles Study of External Strain Tuning the Electronic and Optical Properties of the 2D MoTe2/PtS2 van der Waals Heterostructure

Two-dimensional van der Waals (vdW) heterostructures reveal novel properties due to their unique interface, which have attracted extensive focus. In this work, the first-principles methods are explored to investigate the electronic and the optical abilities of the heterostructure constructed by monolayered MoTe₂ and PtS₂. Then, the external biaxial strain is employed on the MoTe₂/PtS₂ heterostructure, which can persist in the intrinsic type-II band structure and decrease the bandgap. In particular, the MoTe₂/PtS₂ vdW heterostructure exhibits a suitable band edge energy for the redox reaction for water splitting at pH 0, while it is also desirable for that at pH 7 under decent compressive stress. More importantly, the MoTe₂/PtS₂ vdW heterostructure shows a classy solar-to-hydrogen efficiency, and the light absorption properties can further be enhanced by the strain. Our results showed an effective theoretical strategy to tune the electronic and optical performances of the 2D heterostructure, which can be used in energy conversion such as the automotive battery system.

MOVPE Growth of GaN via Graphene Layers on GaN/Sapphire Templates

The remote epitaxy of GaN epilayers on GaN/sapphire templates was studied by using different graphene interlayer types. Monolayer, bilayer, double-stack of monolayer, and triple-stack of monolayer graphenes were transferred onto GaN/sapphire templates using a wet transfer technique. The quality of the graphene interlayers was examined by Raman spectroscopy. The impact of the interlayer type on GaN nucleation was analyzed by scanning electron microscopy. The graphene interface and structural quality of GaN epilayers were studied by transmission electron microscopy and X-ray diffraction, respectively. The influence of the graphene interlayer type is discussed in terms of the differences between remote epitaxy and van der Waals epitaxy. The successful exfoliation of GaN membrane is demonstrated.

Band alignment tuning of heptazine-g-C3N4/g-ZnO vdW heterostructure as a promising water-splitting photocatalyst

Van der Waals (vdW) heterostructures of two-dimensional monolayers are a relatively new class of materials with highly tunable band alignment, bandgap energy, and bandgap transition type. In this study, we performed density functional theory calculations to investigate how a vdW heterostructure of heptazine-based graphitic carbon nitride (hg-C₃N₄) and graphitic zinc oxide (g-ZnO) monolayers is formed (hg-C₃N₄/g-ZnO). This heterostructure is a potential solar-driven photocatalyst for the water-splitting reaction. Upon the formation of the heterostructure, a type-I indirect bandgap (E_g = 2.08 eV) is created with appropriate conduction band minimum and valence band maximum levels relative to the oxidation/reduction potentials for the water-splitting reaction. In addition, a very large electrostatic potential difference of 11.18 eV is generated across the heterostructure, leading to a large, naturally-formed, built-in electric field directing from hg-C₃N₄ to g-ZnO. The produced electric field forces photogenerated electrons in g-ZnO to transfer toward hg-C₃N₄, leading to a decrease in the electron-hole recombination rate. We also found that both g-ZnO and hg-C₃N₄ synergistically lead to higher light absorption of the heterostructure (λ_max = 387 nm). Furthermore, band alignment, bandgap energy, and transition type of the heterostructure can be tuned by applying external perpendicular electric fields and biaxial strains. It was found that a strain of +2% leads to a Z-scheme band alignment (E_g = 2.34 eV, direct) and an electric field of 1 V Å^-1 leads to a type-II heterostructure (E_g = 2.29 eV, indirect), which are both beneficial for efficient water-splitting photocatalysis.

Tunable Electronic Properties of Graphene/g-AlN Heterostructure: The Effect of Vacancy and Strain Engineering

The structural and electronic properties of graphene/graphene-like Aluminum Nitrides monolayer (Gr/g-AlN) heterojunction with and without vacancies are systematically investigated by first-principles calculation. The results prove that Gr/g-AlN with nitrogen-vacancy (Gr/g-AlN-VN) is energy favorable with the smallest sublayer distance and binding energy. Gr/g-AlN-VN is nonmagnetic, like that in the pristine Gr/g-AlN structure, but it is different from the situation of g-AlN-VN, where a magnetic moment of 1 μB is observed. The metallic graphene acts as an electron acceptor in the Gr/g-AlN-VN and donor in Gr/g-AlN and Gr/g-AlN-VAl contacts. Schottky barrier height Φ B , n by traditional (hybrid) functional of Gr/g-AlN, Gr/g-AlN-VAl, and Gr/g-AlN-VN are calculated as 2.35 (3.69), 2.77 (3.23), and 1.10 (0.98) eV, respectively, showing that vacancies can effectively modulate the Schottky barrier height. Additionally, the biaxial strain engineering is conducted to modulate the heterojunction contact properties. The pristine Gr/g-AlN, which is a p-type Schottky contact under strain-free condition, would transform to an n-type contact when 10% compressive strain is applied. Ohmic contact is formed under a larger tensile strain. Furthermore, 7.5% tensile strain would tune the Gr/g-AlN-VN from n-type to p-type contact. These plentiful tunable natures would provide valuable guidance in fabricating nanoelectronics devices based on Gr/g-AlN heterojunctions.