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Budlayan MLM, Bermundo JPS, Solano JC, Ilasin MD, Guerrero RA, Uraoka Y. Droplet-Scale Conversion of Aluminum into Transparent Aluminum Oxide by Low-Voltage Anodization in an Electrowetting System. LANGMUIR : THE ACS JOURNAL OF SURFACES AND COLLOIDS 2025; 41:184-192. [PMID: 39760403 DOI: 10.1021/acs.langmuir.4c03303] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/07/2025]
Abstract
A localized conversion of aluminum into transparent aluminum oxide by droplet-scale anodization is demonstrated in this work. The anodized region can be contained and controlled on the basis of the electrowetting response of the droplet. A highly uniform and transparent anodized spot was achieved using an anodization voltage of 2 V for 10 min. We analyzed the chemical evolution during the formation of the transparent oxide layer using X-ray photoelectron spectroscopy, which revealed the dynamic interplay between Al(OH), AlO(OH), and Al2O3 formation and dissolution during the conversion process. The dominant presence of aluminum oxide/hydroxide on the transparent spot after anodization was observed. The morphological characteristics of the transparent oxide layer exhibited a reduction in surface roughness as anodization time increased. Additionally, the formation of randomly distributed nanopores was observed in the anodized samples. X-ray diffraction results revealed the amorphous nature of the produced transparent oxide layer. This droplet-scale anodization technique can be extended to other transparent metal oxides, providing an environmentally friendly and cost-effective fabrication route toward sustainable electronics and other related applications.
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Affiliation(s)
- Marco Laurence M Budlayan
- Department of Physics, School of Science and Engineering, Ateneo de Manila University, Quezon City 1108, Philippines
| | - Juan Paolo S Bermundo
- Information Device Science Laboratory, Division of Materials Science, Nara Institute of Science and Technology, Ikoma City, Nara 630-0192, Japan
| | - James C Solano
- Information Device Science Laboratory, Division of Materials Science, Nara Institute of Science and Technology, Ikoma City, Nara 630-0192, Japan
| | - Mark D Ilasin
- Information Device Science Laboratory, Division of Materials Science, Nara Institute of Science and Technology, Ikoma City, Nara 630-0192, Japan
| | - Raphael A Guerrero
- Department of Physics, School of Science and Engineering, Ateneo de Manila University, Quezon City 1108, Philippines
| | - Yukiharu Uraoka
- Information Device Science Laboratory, Division of Materials Science, Nara Institute of Science and Technology, Ikoma City, Nara 630-0192, Japan
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Liu J, Xiong X, Li H, Huang X, Wang Y, Sheng Y, Liang Z, Yao R, Ning H, Wei X. Application of Solution-Processed High-Entropy Metal Oxide Dielectric Layers with High Dielectric Constant and Wide Bandgap in Thin-Film Transistors. MICROMACHINES 2024; 15:1465. [PMID: 39770218 PMCID: PMC11679873 DOI: 10.3390/mi15121465] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 10/31/2024] [Revised: 11/27/2024] [Accepted: 11/29/2024] [Indexed: 01/11/2025]
Abstract
High-k metal oxides are gradually replacing the traditional SiO2 dielectric layer in the new generation of electronic devices. In this paper, we report the production of five-element high entropy metal oxides (HEMOs) dielectric films by solution method and analyzed the role of each metal oxide in the system by characterizing the film properties. On this basis, we found optimal combination of (AlGaTiYZr)Ox with the best dielectric properties, exhibiting a low leakage current of 1.2 × 10-8 A/cm2 @1 MV/cm and a high dielectric constant, while the film's visible transmittance is more than 90%. Based on the results of factor analysis, we increased the dielectric constant up to 52.74 by increasing the proportion of TiO2 in the HEMOs and maintained a large optical bandgap (>5 eV). We prepared thin film transistors (TFTs) based on an (AlGaTiYZr)Ox dielectric layer and an InGaZnOx (IGZO) active layer, and the devices exhibit a mobility of 18.2 cm2/Vs, a threshold voltage (Vth) of -0.203 V, and an subthreshold swing (SS) of 0.288 V/dec, along with a minimal hysteresis, which suggests a good prospect of applying HEMOs to TFTs. It can be seen that the HEMOs dielectric films prepared based on the solution method can combine the advantages of various high-k dielectrics to obtain better film properties. Moreover, HEMOs dielectric films have the advantages of simple processing, low-temperature preparation, and low cost, which are expected to be widely used as dielectric layers in new flexible, transparent, and high-performance electronic devices in the future.
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Affiliation(s)
- Jun Liu
- School of Electrical Engineering, University of South China, Hengyang 421001, China; (J.L.); (Y.W.)
| | - Xin Xiong
- Guangdong Basic Research Center of Excellence for Energy & Information Polymer Materials, State Key Laboratory of Luminescent Materials and Devices, School of Materials Sciences and Engineering, South China University of Technology, Guangzhou 510640, China
| | - Han Li
- Southwest Institute of Technology and Engineering, Chongqing 400039, China
| | - Xiangchen Huang
- School of Electrical Engineering, University of South China, Hengyang 421001, China; (J.L.); (Y.W.)
| | - Yajun Wang
- School of Electrical Engineering, University of South China, Hengyang 421001, China; (J.L.); (Y.W.)
| | - Yifa Sheng
- School of Electrical Engineering, University of South China, Hengyang 421001, China; (J.L.); (Y.W.)
| | - Zhihao Liang
- Guangdong Basic Research Center of Excellence for Energy & Information Polymer Materials, State Key Laboratory of Luminescent Materials and Devices, School of Materials Sciences and Engineering, South China University of Technology, Guangzhou 510640, China
| | - Rihui Yao
- Guangdong Basic Research Center of Excellence for Energy & Information Polymer Materials, State Key Laboratory of Luminescent Materials and Devices, School of Materials Sciences and Engineering, South China University of Technology, Guangzhou 510640, China
- Key Lab of Guangdong Province for High Property and Functional Polymer Materials, South China University of Technology, Guangzhou 510640, China
| | - Honglong Ning
- Guangdong Basic Research Center of Excellence for Energy & Information Polymer Materials, State Key Laboratory of Luminescent Materials and Devices, School of Materials Sciences and Engineering, South China University of Technology, Guangzhou 510640, China
- The International School of Microelectronics, Dongguan University of Technology, Dongguan 523808, China
| | - Xiaoqin Wei
- Southwest Institute of Technology and Engineering, Chongqing 400039, China
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Chatterjee S, Ta S, Khanra S, Das D. Mo(vi) complexes of amide-imine conjugates for tuning the selectivity of fluorescence recognition of Y(iii) vs. Pb(ii). RSC Adv 2022; 12:33293-33303. [PMID: 36425161 PMCID: PMC9677438 DOI: 10.1039/d2ra06035c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/24/2022] [Accepted: 10/31/2022] [Indexed: 09/19/2023] Open
Abstract
Two amide-imine conjugates, viz. 3-methyl-benzoic acid (4-diethylamino-2-hydroxy-benzylidene)-hydrazide (L1) and 3-methyl-benzoic acid (2-hydroxy-naphthalen-1-ylmethylene)-hydrazide (L2), have been prepared and used for a further synthesis of Mo(vi) complexes (M1 and M2, respectively). Single crystal X-ray diffraction analysis confirmed their structures. Interestingly, M1 selectively recognizes Y3+ and Pb2+ at two different wavelengths, whereas M2 selectively interacts with Y3+ with a significantly high binding constant, 1.3 × 105 M-1. The proposed sensing mechanism involves the displacement of Mo(vi) by Y3+/Pb2+ from respective Mo(vi) complexes. The TCSPC experiment also substantiates the "turn-on" fluorescence process. A logic gate has been constructed utilizing the fluorescence recognition of cations by M1. DFT studies corroborated the cation-probe interactions and allowed exploring the orbital energy parameters.
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Affiliation(s)
- Sudeshna Chatterjee
- Department of Chemistry, The University of Burdwan Burdwan 713104 W.B. India +91-342-2530452 +91-342-2533913, ext. 424
| | - Sabyasachi Ta
- Department of Chemistry, The University of Burdwan Burdwan 713104 W.B. India +91-342-2530452 +91-342-2533913, ext. 424
| | - Somnath Khanra
- Department of Chemistry, The University of Burdwan Burdwan 713104 W.B. India +91-342-2530452 +91-342-2533913, ext. 424
| | - Debasis Das
- Department of Chemistry, The University of Burdwan Burdwan 713104 W.B. India +91-342-2530452 +91-342-2533913, ext. 424
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A series of urea complexes with rare-earth nitrates: Synthesis, structure and thermal decomposition. Inorganica Chim Acta 2022. [DOI: 10.1016/j.ica.2021.120759] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
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Savinkina EV, Karavaev IA, Grigoriev MS. Crystal structures of praseodymium nitrate complexes with urea, precursors for solution combustion synthesis of nanoscale praseodymium oxides. Polyhedron 2020. [DOI: 10.1016/j.poly.2020.114875] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/17/2022]
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