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Tromer RM, Felix IM, Pereira LFC, da Luz MGE, Junior LAR, Galvão DS. Lattice thermal conductivity of 2D nanomaterials: a simple semi-empirical approach. Phys Chem Chem Phys 2023; 25:28703-28715. [PMID: 37849351 DOI: 10.1039/d3cp02896h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/19/2023]
Abstract
Extracting reliable information on certain physical properties of materials, such as thermal transport, can be computationally very demanding. Aiming to overcome such difficulties in the particular case of lattice thermal conductivity (LTC) of 2D nanomaterials, we propose a simple, fast, and accurate semi-empirical approach for LTC calculation. The approach is based on parameterized thermochemical equations and Arrhenius-like fitting procedures, thus avoiding molecular dynamics or ab initio protocols, which frequently require computationally expensive simulations. As a proof of concept, we obtain the LTC of some prototypical physical systems, such as graphene (and other 2D carbon allotropes), hexagonal boron nitride (hBN), silicene, germanene, binary, and ternary BNC lattices and two examples of the fullerene network family. Our obtained values are in good agreement with other theoretical and experimental estimations, nonetheless, being derived in a rather straightforward way, at a fraction of the usual computational cost.
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Affiliation(s)
- R M Tromer
- Applied Physics Department, State University of Campinas, Campinas-SP, 13083-970, Brazil.
- Center for Computing in Engineering & Sciences, Unicamp, Campinas-SP, Brazil
| | - I M Felix
- Departamento de Física, Universidade Federal do Rio Grande do Norte, Natal-RN, 59078-970, Brazil
| | - L F C Pereira
- Departamento de Física, Universidade Federal de Pernambuco, Recife-PE, 50670-901, Brazil
| | - M G E da Luz
- Departamento de Física, Universidade Federal do Paraná, Curitiba-PR, 81531-980, Brazil.
| | - L A Ribeiro Junior
- Institute of Physics, University of Brasília, Brasília-DF, 70910-970, Brazil.
| | - D S Galvão
- Applied Physics Department, State University of Campinas, Campinas-SP, 13083-970, Brazil.
- Center for Computing in Engineering & Sciences, Unicamp, Campinas-SP, Brazil
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2
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Naik AA, Ertural C, Dhamrait N, Benner P, George J. A Quantum-Chemical Bonding Database for Solid-State Materials. Sci Data 2023; 10:610. [PMID: 37696882 PMCID: PMC10495449 DOI: 10.1038/s41597-023-02477-5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/24/2023] [Accepted: 08/15/2023] [Indexed: 09/13/2023] Open
Abstract
An in-depth insight into the chemistry and nature of the individual chemical bonds is essential for understanding materials. Bonding analysis is thus expected to provide important features for large-scale data analysis and machine learning of material properties. Such chemical bonding information can be computed using the LOBSTER software package, which post-processes modern density functional theory data by projecting the plane wave-based wave functions onto an atomic orbital basis. With the help of a fully automatic workflow, the VASP and LOBSTER software packages are used to generate the data. We then perform bonding analyses on 1520 compounds (insulators and semiconductors) and provide the results as a database. The projected densities of states and bonding indicators are benchmarked on standard density-functional theory computations and available heuristics, respectively. Lastly, we illustrate the predictive power of bonding descriptors by constructing a machine learning model for phononic properties, which shows an increase in prediction accuracies by 27% (mean absolute errors) compared to a benchmark model differing only by not relying on any quantum-chemical bonding features.
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Affiliation(s)
- Aakash Ashok Naik
- Federal Institute for Materials Research and Testing, Department Materials Chemistry, Berlin, 12205, Germany
- Friedrich Schiller University Jena, Institute of Condensed Matter Theory and Solid-State Optics, Jena, 07743, Germany
| | - Christina Ertural
- Federal Institute for Materials Research and Testing, Department Materials Chemistry, Berlin, 12205, Germany
| | - Nidal Dhamrait
- Federal Institute for Materials Research and Testing, Department Materials Chemistry, Berlin, 12205, Germany
| | - Philipp Benner
- Federal Institute for Materials Research and Testing, eScience Group, Berlin, 12205, Germany
| | - Janine George
- Federal Institute for Materials Research and Testing, Department Materials Chemistry, Berlin, 12205, Germany.
- Friedrich Schiller University Jena, Institute of Condensed Matter Theory and Solid-State Optics, Jena, 07743, Germany.
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3
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Huang SZ, Fang CG, Guo JX, Wang BY, Yang HD, Feng QY, Li B, Xiang X, Zu XT, Deng HX. Boosting thermoelectric performance of HfSe 2 monolayer by selectivity chemical adsorption. J Colloid Interface Sci 2023; 639:14-23. [PMID: 36804787 DOI: 10.1016/j.jcis.2023.02.044] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/01/2023] [Revised: 01/29/2023] [Accepted: 02/10/2023] [Indexed: 02/13/2023]
Abstract
In this work, a strategy to boosting thermoelectric (TE) performance of 2D materials is explored. We find that, appropriate chemical adsorption of atoms can effectively increase the TE performance of HfSe2 monolayer. Our results show that the adsorption of Ni atom on HfSe2 monolayer (Ni-HfSe2) can improve the optimal power factor PF and ZT at 300 K, increased by more than ∼67% and ∼340%, respectively. The PF and ZT of Ni-HfSe2 at 300 K can reach 85.06 mW m-1 K-2 and 3.09, respectively. The detailed study reveal that the adsorption of Ni atom can induce additional conductional channels of electrons, enhance the coupling of acoustic-optical phonons and the phonon anharmonicity, resulting in an obvious increment of electrical conductivity (increased by more than ∼89%) in n-type doped system and an ultralow phonon thermal conductivity (1.17 W/mK at 300 K). The high electrical conductivity and ultralow phonon thermal conductivity results in the significant increments of PF and ZT. Our study also shows that, Ni-HfSe2 is a thermal, dynamic and mechanical stable structure, which can be employed in TE application. Our research indicates that selectivity chemical adsorption is a promising way to increase TE performance of 2D materials.
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Affiliation(s)
- Si-Zhao Huang
- School of Physics, University of Electronic Science and Technology of China, Chengdu 611731, China
| | - Cheng-Ge Fang
- China Academy of Launch Vehicle Technology, Beijing 10076, China
| | - Jia-Xing Guo
- School of Physics, University of Electronic Science and Technology of China, Chengdu 611731, China
| | - Bi-Yi Wang
- Science and Technology on Electro-Optical Information Security Control Laboratory, Tianjin 300308, China
| | - Hong-Dong Yang
- Shanghai Institute of Space Power-Sources, Shanghai 200245, China
| | - Qing-Yi Feng
- School of Physics, University of Electronic Science and Technology of China, Chengdu 611731, China
| | - Bo Li
- School of Physics, University of Electronic Science and Technology of China, Chengdu 611731, China
| | - Xia Xiang
- School of Physics, University of Electronic Science and Technology of China, Chengdu 611731, China.
| | - Xiao-Tao Zu
- School of Physics, University of Electronic Science and Technology of China, Chengdu 611731, China
| | - Hong-Xiang Deng
- School of Physics, University of Electronic Science and Technology of China, Chengdu 611731, China.
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Huang SZ, Fang CG, Feng QY, Wang BY, Yang HD, Li B, Xiang X, Zu XT, Deng HX. Strain Tunable Thermoelectric Material: Janus ZrSSe Monolayer. LANGMUIR : THE ACS JOURNAL OF SURFACES AND COLLOIDS 2023; 39:2719-2728. [PMID: 36753560 DOI: 10.1021/acs.langmuir.2c03185] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Thermoelectric (TE) performance of the Janus ZrSSe monolayer under biaxial strain is systematically explored by the first-principles approach and Boltzmann transport theory. Our results show that the Janus ZrSSe monolayer has excellent chemical, dynamical, thermal, and mechanical stabilities, which provide a reliable platform for strain tuning. The electronic structure and TE transport parameters of the Janus ZrSSe monolayer can be obviously tuned by biaxial strain. Under 2% tensile strain, the optimal power factor PF of the n-type-doped Janus ZrSSe monolayer reaches 46.36 m W m-1 K-2 at 300 K. This value is higher than that of the most classical TE materials. Under 6% tensile strain, the maximum ZT values for the p-type- and n-type-doped Janus ZrSSe monolayers are 4.41 and 4.88, respectively, which are about 3.83 and 1.49 times the results of no strain, respectively. Such high TE performance can be attributed to high band degeneracy and short phonon relaxation time under strain, causing simultaneous increase of the Seebeck coefficient and suppression of the phonon thermal transport. Present work demonstrates that the Janus ZrSSe monolayer is a promising candidate as a strain-tunable TE material and stimulates further experimental synthesis.
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Affiliation(s)
- Si-Zhao Huang
- School of Physics, University of Electronic Science and Technology of China, Chengdu 611731, China
| | - Cheng-Ge Fang
- China Academy of Launch Vehicle Technology, Beijing 10076, China
| | - Qing-Yi Feng
- School of Physics, University of Electronic Science and Technology of China, Chengdu 611731, China
| | - Bi-Yi Wang
- Science and Technology on Electro-Optical Information Security Control Laboratory, Tianjin 300308, China
| | - Hong-Dong Yang
- Shanghai Institute of Space Power-Sources, Shanghai 200245, China
| | - Bo Li
- School of Physics, University of Electronic Science and Technology of China, Chengdu 611731, China
| | - Xia Xiang
- School of Physics, University of Electronic Science and Technology of China, Chengdu 611731, China
| | - Xiao-Tao Zu
- School of Physics, University of Electronic Science and Technology of China, Chengdu 611731, China
| | - Hong-Xiang Deng
- School of Physics, University of Electronic Science and Technology of China, Chengdu 611731, China
- Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou 313001, China
- Science and Technology on Electro-Optical Information Security Control Laboratory, Tianjin 300308, China
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Makumi SW, Bem D, Musila N, Foss C, Aksamija Z. In-plane thermoelectric properties of graphene/ xBN/graphene van der Waals heterostructures. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2023; 35:155701. [PMID: 36731173 DOI: 10.1088/1361-648x/acb89e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/23/2022] [Accepted: 02/01/2023] [Indexed: 06/18/2023]
Abstract
2D materials have attracted broad attention from researchers for their unique electronic properties, which may be been further enhanced by combining 2D layers into vertically stacked van der Waals heterostructures (vdWHs). Among the superlative properties of 2D systems, thermoelectric (TE) energy conversion promises to enable targeted energy conversion, localized thermal management, and thermal sensing. However, TE conversion efficiency remains limited by the inherent tradeoff between conductivity and thermopower. In this paper, we use first-principles calculation to study graphene-based vdWHs composed of graphene layers and hexagonal boron nitride (h-BN). We compute the electronic band structures of heterostructured systems using Quantum Espresso and their TE properties using BoltzTrap2. Our results have shown that stacking layers of these 2D materials opens a bandgap, increasing it with the number of h-BN interlayers, which significantly improves the power factor (PF). We predict a PF of ∼1.0 × 1011W K-2m s for the vdWHs, nearly double compared to 5 × 1010W K-2m s that we obtained for single-layer graphene. This study gives important information on the effect of stacking layers of 2D materials and points toward new avenues to optimize the TE properties of vdWHs.
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Affiliation(s)
- Sylvester W Makumi
- Materials Science and Engineering Department, University of Utah, Salt Lake City, UT, United States of America
- Department of Physics, Kenyatta University, Nairobi, Kenya
| | - Daniel Bem
- Department of Physics, Kenyatta University, Nairobi, Kenya
| | | | - Cameron Foss
- Electrical and Computer Engineering, University of Massachusetts Amherst, Amherst, MA, United States of America
| | - Zlatan Aksamija
- Materials Science and Engineering Department, University of Utah, Salt Lake City, UT, United States of America
- Electrical and Computer Engineering, University of Massachusetts Amherst, Amherst, MA, United States of America
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Shi W, Ge N, Yu S, Wu J, Hu T, Wei J, Yan X, Wang X, Wang Z. High thermoelectric performance of a Sc 2Si 2Te 6 monolayer at medium temperatures: an ab initio study. Phys Chem Chem Phys 2023; 25:1616-1626. [PMID: 36541178 DOI: 10.1039/d2cp04410b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/12/2022]
Abstract
Thermoelectric (TE) materials have attracted great attention in solving the problems in the waste heat field, while low figure of merit and poor material stability drastically limit their practical applications. In this work, a two-dimensional (2D) Sc2Si2Te6 monolayer was systematically explored as a promising TE material via ab initio methods. The results reveal that the Sc2Si2Te6 monolayer possesses an indirect band gap with a rhombohedral crystal phase and exhibits excellent dynamic stability. The lower electronic/lattice thermal conductivity and higher electron carrier mobility result in good n-type power factor parameters between 6.24 × 1010 and 1.5 × 1011 W m-1 s-1 K-2 from 300 to 700 K. Such combined merits of low thermal conductivity and high power factor parameters endow the Sc2Si2Te6 monolayer with superior thermoelectric properties with figure of merit (ZT) values of 1.41 and 3.81 at 300 K and 700 K, respectively. This study presented here can shed light on the future design of various 2D materials for thermoelectric applications.
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Affiliation(s)
- Wenwu Shi
- Shenzhen Institute of Information Technology, Shenzhen 518172, P. R. China. .,University of Electronic Science and Technology of China, Chengdu 610054, P. R. China.
| | - Nina Ge
- State Key Laboratory of Environmental-friendly Energy Materials, Southwest University of Science and Technology, Mianyang, 621000, P. R. China
| | - Sheng Yu
- Shenzhen Institute of Information Technology, Shenzhen 518172, P. R. China.
| | - Jiajing Wu
- Shenzhen Institute of Information Technology, Shenzhen 518172, P. R. China.
| | - Tao Hu
- Shenzhen Institute of Information Technology, Shenzhen 518172, P. R. China.
| | - Jun Wei
- Shenzhen Key Laboratory of Flexible Printed Electronics Technology, Harbin Institute of Technology (Shenzhen), University Town, Shenzhen, 518055, P. R. China.,School of Science, Harbin Institute of Technology (Shenzhen), University Town, Shenzhen, 518055, P. R. China
| | - Xiao Yan
- Shenzhen Institute of Information Technology, Shenzhen 518172, P. R. China.
| | - Xinzhong Wang
- Shenzhen Institute of Information Technology, Shenzhen 518172, P. R. China.
| | - Zhiguo Wang
- University of Electronic Science and Technology of China, Chengdu 610054, P. R. China.
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Yan S, Wang Y, Tao F, Ren J. High-Throughput Estimation of Phonon Thermal Conductivity from First-Principles Calculations of Elasticity. J Phys Chem A 2022; 126:8771-8780. [DOI: 10.1021/acs.jpca.2c06286] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/11/2022]
Affiliation(s)
- Shenshen Yan
- Center for Phononics and Thermal Energy Science, China-EU Joint Lab on Nanophononics, Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology, School of Physics Sciences and Engineering, Tongji University, Shanghai200092, China
| | - Yi Wang
- Center for Phononics and Thermal Energy Science, China-EU Joint Lab on Nanophononics, Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology, School of Physics Sciences and Engineering, Tongji University, Shanghai200092, China
| | - Fang Tao
- Center for Phononics and Thermal Energy Science, China-EU Joint Lab on Nanophononics, Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology, School of Physics Sciences and Engineering, Tongji University, Shanghai200092, China
| | - Jie Ren
- Center for Phononics and Thermal Energy Science, China-EU Joint Lab on Nanophononics, Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology, School of Physics Sciences and Engineering, Tongji University, Shanghai200092, China
- Shanghai Research Institute for Intelligent Autonomous Systems, Tongji University, Shanghai200092, China
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Shi W, Ge N, Wang X, Wang Z. Thermoelectric performance of ZrNX (X = Cl, Br and I) monolayers. Phys Chem Chem Phys 2021; 24:560-567. [PMID: 34904983 DOI: 10.1039/d1cp01928g] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
A low thermal conductivity and a high power factor are essential for efficient thermoelectric materials. The lattice thermal conductivity can be reduced by reducing the dimensions of the materials, thus improving the thermoelectric performance. In this work, the electronic, carrier and phonon transport and the thermoelectric properties of ZrNX (X = Cl, Br, and I) monolayers were investigated using density functional theory and Boltzmann transport theory. The electronic and phonon transport show anisotropic properties. The thermal conductivities are 20.8, 14.6 and 12.4 W m-1 K-1 at room temperature along the y-direction for the ZrNCl, ZrNBr, and ZrNI monolayers, respectively. Combining the low lattice thermal conductivity and the high power factor results in an excellent thermoelectric performance of the ZrNX monolayers. The thermoelectric figure of merit of ZrNX monolayers can reach magnitudes of ∼0.49-3.15 by optimal hole and electron concentrations between 300 and 700 K. ZrNX monolayers with high ZT values for n- and p-type materials would thus be novel, promising candidate 2D thermoelectric materials for heat-electricity conversion.
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Affiliation(s)
- Wenwu Shi
- University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China. .,Department of Electronic Communication and Technology, Shenzhen Institute of Information Technology, Shenzhen, 518172, China.
| | - Nina Ge
- State Key Laboratory of Environmental-friendly Energy Materials, Southwest University of Science and Technology, Mianyang, 621000, P. R. China
| | - Xinzhong Wang
- Department of Electronic Communication and Technology, Shenzhen Institute of Information Technology, Shenzhen, 518172, China.
| | - Zhiguo Wang
- University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China. .,Department of Electronic Communication and Technology, Shenzhen Institute of Information Technology, Shenzhen, 518172, China.
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