HfS2/MoTe2 vdW heterostructure: bandstructure and strain engineering based on first-principles calculation

MoTe2/InN van der Waals heterostructures for gas sensors: a DFT study

Vertical van der Waals (vdW) heterostructures have shown potential for gas sensing owing to their remarkable sensitivity. However, the optimization process for achieving the best gas sensing performance is complicated by the heterostructure's reliance on both physical and electrical characteristics. This study employs density functional theory (DFT) to analyse the structural and electronic parameters of a MoTe2/InN vdW heterostructure. The findings of this study indicate that the vdW heterostructure has a type-II band alignment with higher adsorption energy towards NH3, NO2, and SO2 than the individual monolayers. In specific, the heterostructure is well suited for NO2 detection but has limitations in reliably detecting NH3 and SO2 due to longer recovery times. We find significant hybridization between the adsorbate and interacting surfaces' orbitals and a notable presence of NO2 molecular orbitals in proximity to the Fermi level. Additionally, dielectric and work function modulations offer a viable means to develop optical-based gas sensors that can selectively detect NO2. Our research provides valuable insights into vdW heterostructure design for high-performance gas sensors.

Tunable electronic and optical properties of MoTe2/InSe heterostructure via external electric field and strain engineering

Based on first-principles calculation under density functional theory, the geometry, electronic and optical properties of the MoTe₂/InSe heterojunction have been investigated. The results reveal that the MoTe₂/InSe heterojunction has a typical type-Ⅱ band alignment and exhibits an indirect bandgap of 0.99 eV. In addition, the Z-scheme electron transport mechanism is capable of efficiently separating photogenerated carriers. The bandgap of the heterostructure changes regularly under applied electric field and exhibits a significant Giant Stark effect. Under an applied electric field of 0.5 V Å^-1, the band alignment of the heterojunction shifts from type-Ⅱ to type-I. The application of strain produced comparable changes in the heterojunction. More importantly, the transition from semiconductor to metal is completed in the heterostructure under the applied electric field and strain. Furthermore, the MoTe₂/InSe heterojunction retains the optical properties of two monolayers and produces greater light absorption on this basis, especially for UV light. The above results offer a theoretical basis for the application of MoTe₂/InSe heterostructure in the next generation of photodetectors.

Insights into Photoinduced Carrier Dynamics and Overall Water Splitting of Z-Scheme van der Waals Heterostructures with Intrinsic Electric Polarization

Using first-principles calculations in combination with nonadiabatic molecular dynamics (NAMD), we propose novel heterostructures of carbon nitride (C₇N₆) and the Janus GaSnPS monolayer as promising direct Z-scheme photocatalysts for solar-driven overall water splitting. The out-of-plane electric field due to the electric polarization which is dependent on the stacking pattern alters the band alignment and catalytic activity of the heterostructures. The relatively strong interfacial nonadiabatic coupling and long quantum coherence time accelerate the interlayer carrier recombination, enabling a direct Z-scheme photocatalytic mechanism. More importantly, the redox ability of the remanent photogenerated carriers in the Z scheme is strong enough to trigger both the hydrogen evolution reaction (HER) and oxygen reduction reaction (OER) simultaneously without the help of sacrificial agents. Our work reveals a fundamental understanding of ultrafast charge carrier dynamics at vdW heterointerfaces as well as new design prospects for highly efficient direct Z-scheme photocatalysts.

First principles study on structural, electronic and optical properties of HfS2(1-x)Se2x and ZrS2(1-x)Se2x ternary alloys

Alloying 2D transition metal dichalcogenides (TMDs) with dopants to achieve ternary alloys is as an efficient and scalable solution for tuning the electronic and optical properties of two-dimensional materials. This study provides a comprehensive study on the electronic and optical properties of ternary HfS_2(1−x)Se_2(x) and ZrS_2(1−x)Se_2(x) [0 ≤ x ≤ 1] alloys, by employing density functional theory calculations along with random phase approximation. Phonon dispersions were also obtained by using density functional perturbation theory. The results indicate that both of the studied ternary families are stable and the increase of Selenium concentration in HfS_2(1−x)Se_2(x) and ZrS_2(1−x)Se_2(x) alloys results in a linear decrease of the electronic bandgap from 2.15 (ev) to 1.40 (ev) for HfS_2(1−x)Se_2(x) and 1.94 (ev) to 1.23 (ev) for ZrS_2(1−x)Se_2(x) based on the HSE06 functional. Increasing the Se concentration in the ternary alloys results in a red shift of the optical absorption spectra such that the main absorption peaks of HfS_2(1−x)Se_2(x) and ZrS_2(1−x)Se_2(x) cover a broad visible range from 3.153 to 2.607 eV and 2.405 to 1.908 eV, respectively. The studied materials appear to be excellent base materials for tunable electronic and optoelectronic devices in the visible range.

Adding Selenium to HfS₂ and ZrS₂ two-dimensional materials allows tuning the optical properties in a wide visible spectrum that can be used in various electronic and optical applications, including solar cells.

Effect of the sulfur termination on the properties of Hf2CO2 MXene

A computational study was carried out to investigate the effect of surface termination on Janus Hf₂COS MXene by substituting partly the O-terminated layer with S atoms. Our predictions confirm that this chemical strategy allows one to tailor the band gap of MXenes. Indeed, the semiconducting character of Hf₂CO₂ MXene decreases by the exchange of O by S atoms. From a structural point of view, dynamical, mechanical, and thermal analysis confirm the thermodynamic stability of the Janus Hf₂COS MXene, which shows metallic character. Furthermore, topological chemical analysis indicates an ionic nature of Hf₂CO₂ MXene that tends to be reduced by increasing the concentration of S atoms, promoting a covalent character. Shortly, the present study illustrates how the properties of MXenes can be tailored by functionalizing them with different chemical terminations.

Two-dimensional graphene-HfS2 van der Waals heterostructure as electrode material for alkali-ion batteries

Poor electrical conductivity and large volume expansion during repeated charge and discharge is what has characterized many battery electrode materials in current use. This has led to 2D materials, specifically multi-layered 2D systems, being considered as alternatives. Among these 2D multi-layered systems are the graphene-based van der Waals heterostructures with transition metal di-chalcogenides (TMDCs) as one of the layers. Thus in this study, the graphene–hafnium disulphide (Gr–HfS₂) system, has been investigated as a prototype Gr–TMDC system for application as a battery electrode. Density functional theory calculations indicate that Gr–HfS₂ van der Waals heterostructure formation is energetically favoured. In order to probe its battery electrode application capability, Li, Na and K intercalants were introduced between the layers of the heterostructure. Li and K were found to be good intercalants as they had low diffusion barriers as well as a positive open circuit voltage. A comparison of bilayer graphene and bilayer HfS₂ indicates that Gr–HfS₂ is a favourable battery electrode system.

A high rate capacity, moderate volume expansion and energetically stable alkali ion graphene–HfS₂ electrode material.