Composite formation in CdSe:Cu2Se nanocrystal films, charge transport characteristics and heterojunction performance

Charge-Compensation in a Displacement Mg2+ Storage Cathode through Polyselenide-Mediated Anion Redox

Chalcogenides have been viewed as important conversion-type Mg²⁺ -storage cathodes to fulfill the high volumetric energy density promise of magnesium (Mg) batteries. However, the low initial Columbic efficiency and the rapid capacity degradation remain challenges for the chalcogenide cathodes, as the clear Mg²⁺ -storage mechanism has yet to be clarified. Herein, we illustrate that the charge storage mechanism of the Cu_2-x Se cathode is a reversible displacement reaction along with a polyselenide (PSe) mediated solution process of anion-compensation. The unique anion redox improves charge storage, while the dissolution of PSe also leads to performance degradation. To address this issue, we introduce Mo₆ S₈ into the Cu_2-x Se cathode to immobilize PSe, which significantly improves performance, especially the reversible capacity (from 140 mAh g^-1 to 220 mAh g^-1 ). This work provides inspiration for the modification of the Mg²⁺ -storage cathode, which is a milestone for high-performance Mg batteries.

Enhanced Photoresponse and Wavelength Selectivity by SILAR-Coated Quantum Dots on Two-Dimensional WSe2 Crystals

High-performance photodetectors play crucial roles as an essential tool in many fields of science and technology, such as photonics, imaging, spectroscopy, and data communications. Demands for desired efficiency and low-cost new photodetectors through facile manufacturing methods have become a long-standing challenge. We used a simple successive ionic layer adsorption and reaction (SILAR) method to synthesize CdS, CdSe, and PbS nanoparticles directly grown on WSe2 crystalline flakes. In addition to the excellent wavelength selectivity for (30 nm) CdS, (30 nm) CdSe, and (6 nm) PbS/WSe2 heterostructures, the hybrid devices presented an efficient photodetector with a photoresponsivity of 48.72 A/W, a quantum efficiency of 71%, and a response time of 2.5-3.5 ms. Considering the energy band bending structure and numerical simulation data, the electric field distribution at interfaces and photocarrier generation/recombination rates have been studied. The introduced fabrication strategy is fully compatible with the semiconductor industry process, and it can be used as a novel method for fabricating wavelength-tunable and high-performance photodetectors toward innovative optoelectronic applications.