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Park CS, Kwon Y, Kim Y, Cho HD, Kim H, Yang W, Kim DY. Strong Room-Temperature Ferromagnetism of MoS 2 Compound Produced by Defect Generation. NANOMATERIALS (BASEL, SWITZERLAND) 2024; 14:334. [PMID: 38392707 PMCID: PMC10892600 DOI: 10.3390/nano14040334] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/05/2024] [Revised: 02/05/2024] [Accepted: 02/06/2024] [Indexed: 02/24/2024]
Abstract
Ferromagnetic materials have been attracting great interest in the last two decades due to their application in spintronics devices. One of the hot research areas in magnetism is currently the two-dimensional materials, transition metal dichalcogenides (TMDCs), which have unique physical properties. The origins and mechanisms of transition metal dichalcogenides (TMDCs), especially the correlation between magnetism and defects, have been studied recently. We investigate the changes in magnetic properties with a variation in annealing temperature for the nanoscale compound MoS2. The pristine MoS2 exhibits diamagnetic properties from low-to-room temperature. However, MoS2 compounds annealed at different temperatures showed that the controllable magnetism and the strongest ferromagnetic results were obtained for the 700 °C-annealed sample. These magnetizations are attributed to the unpaired electrons of vacancy defects that are induced by annealing, which are confirmed using Raman spectroscopy and electron paramagnetic resonance spectroscopy (EPR).
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Affiliation(s)
- Chang-Soo Park
- Quantum-Functional Semiconductor Research Center, Dongguk University, Seoul 04620, Republic of Korea; (C.-S.P.); (H.D.C.)
| | - Younghae Kwon
- Quantum-Functional Semiconductor Research Center, Dongguk University, Seoul 04620, Republic of Korea; (C.-S.P.); (H.D.C.)
| | - Youjoong Kim
- Division of Physics and Semiconductor Science, Dongguk University, Seoul 04620, Republic of Korea; (Y.K.); (W.Y.)
| | - Hak Dong Cho
- Quantum-Functional Semiconductor Research Center, Dongguk University, Seoul 04620, Republic of Korea; (C.-S.P.); (H.D.C.)
| | - Heetae Kim
- Institute for Rare Isotope Science, Institute for Basic Science, Daejeon 34000, Republic of Korea;
| | - Woochul Yang
- Division of Physics and Semiconductor Science, Dongguk University, Seoul 04620, Republic of Korea; (Y.K.); (W.Y.)
| | - Deuk Young Kim
- Quantum-Functional Semiconductor Research Center, Dongguk University, Seoul 04620, Republic of Korea; (C.-S.P.); (H.D.C.)
- Division of Physics and Semiconductor Science, Dongguk University, Seoul 04620, Republic of Korea; (Y.K.); (W.Y.)
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Wang Y, Wang T, Zhang H, Liu D, Qian J, Du R, Xu H, Zhang S, Yang Z, Zhao Q, Hu Y, Huang S. Selected-Area Fabrication of a Single-Walled Carbon Nanotube Schottky Junction with Tunable Gate Rectification. J Phys Chem Lett 2022; 13:7541-7546. [PMID: 35947432 DOI: 10.1021/acs.jpclett.2c02117] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Single-walled carbon nanotube (SWNT)-based devices are expected to play an important role in the next generation of electronic integrated circuits. As an important structural unit for SWNT-based electronics, the Schottky junction has a series of functions such as rectification, photoelectric detection, switching, etc. Here, we demonstrate a well-controlled localized radical reaction method to prepare an intramolecular SWNT Schottky junction with a closed edge. This junction exhibits strong gate-dependent rectifying behavior and a high rectification ratio of 962. Furthermore, the semiconducting part on the junction side could be effectively tuned from p-type doping to n-type doping, resulting in reversible rectifying behavior. Our work paves a new avenue for the design and synthesis of an SWNT Schottky junction, which is very important to future applications for carbon-based nanoelectronic devices.
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Affiliation(s)
- Ying Wang
- Key Laboratory of Carbon Materials of Zhejiang Province, College of Chemistry and Materials Engineering, Wenzhou University, Wenzhou 325000, P. R. China
- National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences, Jiangsu Key Laboratory of Artificial Functional Materials, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, P. R. China
| | - Taibin Wang
- Key Laboratory of Carbon Materials of Zhejiang Province, College of Chemistry and Materials Engineering, Wenzhou University, Wenzhou 325000, P. R. China
| | - Hongjie Zhang
- Key Laboratory of Carbon Materials of Zhejiang Province, College of Chemistry and Materials Engineering, Wenzhou University, Wenzhou 325000, P. R. China
| | - Dayan Liu
- Key Laboratory of Carbon Materials of Zhejiang Province, College of Chemistry and Materials Engineering, Wenzhou University, Wenzhou 325000, P. R. China
| | - Jinjie Qian
- Key Laboratory of Carbon Materials of Zhejiang Province, College of Chemistry and Materials Engineering, Wenzhou University, Wenzhou 325000, P. R. China
| | - Ran Du
- School of Materials Science & Engineering, Beijing Institute of Technology, Beijing 100081, P. R. China
| | - Hua Xu
- Key Laboratory of Applied Surface and Colloid Chemistry, Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, School of Materials Science and Engineering, Shaanxi Normal University, Xian 710119, P. R. China
| | - Shuchen Zhang
- Beijing Science and Engineering Center for Nanocarbons, School of Materials Science and Engineering, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, P. R. China
| | - Zhi Yang
- Key Laboratory of Carbon Materials of Zhejiang Province, College of Chemistry and Materials Engineering, Wenzhou University, Wenzhou 325000, P. R. China
| | - Qiuchen Zhao
- State Key Laboratory of Superhard Materials, Jilin University, Changchun, Jilin 132012, P. R. China
| | - Yue Hu
- Key Laboratory of Carbon Materials of Zhejiang Province, College of Chemistry and Materials Engineering, Wenzhou University, Wenzhou 325000, P. R. China
| | - Shaoming Huang
- Key Laboratory of Carbon Materials of Zhejiang Province, College of Chemistry and Materials Engineering, Wenzhou University, Wenzhou 325000, P. R. China
- School of Materials and Energy, Guangzhou Key Laboratory of Low-Dimensional Materials and Energy Storage Devices, Guangdong University of Technology, Guangzhou 510006, P. R. China
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Liu Z, Wang J, Zhang K, Gao X, Liu P, Li Q, Zhang L, Fan S, Kong J, Jiang K. Toward an Intelligent Synthesis: Monitoring and Intervening in the Catalytic Growth of Carbon Nanotubes. J Am Chem Soc 2021; 143:17607-17614. [PMID: 34652140 DOI: 10.1021/jacs.1c07598] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/29/2022]
Abstract
The bottom-up approach to directly synthesizing low-dimensional materials with outstanding performance has extended the material basis for the next generation integrated circuit industry. All the low-dimensional semiconductors, metals, dielectrics, and their heterojunctions are very promising bricks to build faster and more efficient chips because of their atomically smooth surface and interfaces. The greatest challenge in the synthesis of nanomaterials is how to precisely control the structure, crystalline orientation, defects, dimensions, etc. In past decades, both the methodology and the mechanism of synthesis have been systematically investigated to improve the controllability. However, few studies focused on sensing the synthesis processes in situ and responding to the synthesis immediately. Here, we propose the concept of intelligent synthesis in which the final product can be automatically fine-controlled by a closed loop including in situ monitoring and real-time interventions. As a model system, a high-temperature-tolerant circuit is fabricated on the single-walled carbon nanotube (SWCNT) growth substrate for sensing and responding to the synthesis processes. As a result, either highly pure semiconducting (s-) SWCNT arrays or metallic-semiconducting (m-s) junction arrays with different junction positions is simply synthesized by programming the responding signal. The intelligent synthesis shows much higher efficiency and controllability compared to conventional methods and will lead to the next leap in nanotechnology.
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Affiliation(s)
- Zebin Liu
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics & Tsinghua-Foxconn Nanotechnology Research Center, Tsinghua University, Beijing 100084, China
| | - Jiangtao Wang
- Department of Electrical Engineering & Computer Science, Massachusetts Institute of Technology, Cambridge 02139, United States
| | - Ke Zhang
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics & Tsinghua-Foxconn Nanotechnology Research Center, Tsinghua University, Beijing 100084, China
| | - Xinyu Gao
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics & Tsinghua-Foxconn Nanotechnology Research Center, Tsinghua University, Beijing 100084, China
| | - Peng Liu
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics & Tsinghua-Foxconn Nanotechnology Research Center, Tsinghua University, Beijing 100084, China
| | - Qunqing Li
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics & Tsinghua-Foxconn Nanotechnology Research Center, Tsinghua University, Beijing 100084, China.,Collaborative Innovation Center of Quantum Matter, Beijing 100084, China
| | - Lina Zhang
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics & Tsinghua-Foxconn Nanotechnology Research Center, Tsinghua University, Beijing 100084, China
| | - Shoushan Fan
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics & Tsinghua-Foxconn Nanotechnology Research Center, Tsinghua University, Beijing 100084, China.,Collaborative Innovation Center of Quantum Matter, Beijing 100084, China
| | - Jing Kong
- Department of Electrical Engineering & Computer Science, Massachusetts Institute of Technology, Cambridge 02139, United States
| | - Kaili Jiang
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics & Tsinghua-Foxconn Nanotechnology Research Center, Tsinghua University, Beijing 100084, China.,Collaborative Innovation Center of Quantum Matter, Beijing 100084, China.,Beijing Advanced Innovation Center for Future Chips (ICFC), Beijing 100084, China
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