Tunable Ag Nanocavity Enhanced Green Electroluminescence from SiNx:O Light-Emitting Diode

As the driving source, highly efficient silicon-based light emission is urgently needed for the realization of optoelectronic integrated chips. Here, we report that enhanced green electroluminescence (EL) can be obtained from oxygen-doped silicon nitride (SiNx:O) films based on an ordered and tunable Ag nanocavity array with a high density by nanosphere lithography and laser irradiation. Compared with that of a pure SiNxO device, the green electroluminescence (EL) from the SiNx:O/Ag nanocavity array device can be increased by 7.1-fold. Moreover, the external quantum efficiency of the green electroluminescence (EL) is enhanced 3-fold for SiNx:O/Ag nanocavity arrays with diameters of 300 nm. The analysis of absorption spectra and the FDTD calculation reveal that the localized surface plasmon (LSP) resonance of size-controllable Ag nanocavity arrays and SiNx:O films play a key role in the strong green EL. Our discovery demonstrates that SiNx:O films coupled with tunable Ag nanocavity arrays are promising for silicon-based light-emitting diode devices of the AI period in the future.

Enhanced luminescence/photodetecting bifunctional devices based on ZnO:Ga microwire/p-Si heterojunction by incorporating Ag nanowires

With the disadvantages of indirect band gap, low carrier mobility, and large lattice mismatch with other semiconductor materials, one of the current challenges in Si-based materials and structures is to prepare low-dimensional high-performance optoelectronic devices. In this work, an individual ZnO microwire via Ga-incorproration (ZnO:Ga MW) was employed to prepare a light-emitting/detecting bifunctional heterojunction structure, combined with p-type Si crystal wafer as a hole transporting layer. In a forward-bias regime, red luminescence peaking at around 680 nm was captured. While, the fabricated heterojunction device also exhibited an obvious photoresponse in the ultraviolet wavelengths. Interestingly, the introduction of Ag nanowires (AgNWs) are utilized to increase light output with amplitude 4 times higher than with that of naked wire-based LEDs. Similarly, the performance parameters of the fabricated n-AgNWs@ZnO:Ga MW/p-Si heterojunction photodetector are significantly enhanced, containing a responsivity of 5.52 A W^-1, detectivity of 2.34 × 10¹² Jones, external quantum efficiency of 1.9 × 10³% illuminated under 370 nm at -1 V. We compare this work with previous reported photodetectors based on various ZnO/Si-based materials and structures, some performance parameters are not superior, but our constructed n-AgNWs@ZnO:Ga MW/p-Si heterojunction photodetector has comparable overall characteristics, and our findings stand out especially for providing an inexpensive and suitable pathway for developing low-cost, miniaturized and integrated ultraviolet photodetectors. The demonstration of AgNWs enhanced low-dimensional light-emitting/detecting bifunctional photodiodes can offer a promising scheme to construct high-performance Si-based optoelectronic devices.

Self-powered ultraviolet photodetector based on an n-ZnO:Ga microwire/p-Si heterojunction with the performance enhanced by a pyro-phototronic effect

In the present study, a heterojunction made of an individual ZnO microwire via Ga incorporation (ZnO:Ga MW) with a p-Si substrate was constructed to develop a self-powered ultraviolet photodetector. When operated under an illumination of 370 nm light with a power density of ∼ 0.5 mW/cm², the device exhibited an excellent responsivity of 0.185 A/W, a large detectivity of 1.75×10¹² Jones, and excellent stability and repeatability. The device also exhibited a high on/off photocurrent ratio up to 10³, and a short rising and falling time of 499/412 μs. By integrating the pyro-phototronic effect, the maximum responsivity and detectivity increased significantly to 0.25 A/W and 2.30×10¹² Jones, respectively. The response/recovery time was drastically reduced to 79/132 μs without an external power source. In addition, the effects of light wavelength, power density, and bias voltage on the photocurrent response mediated by the pyro-phototronic effect were systematically characterized and discussed. Our work not only provides an easy yet efficient procedure for constructing a self-powered ultraviolet photodetector but also broadens the application prospects for developing individual wire optoelectronic devices based on the photovoltaic-pyro-phototronic effect.

Plasmon-enabled spectrally narrow ultraviolet luminescence device using Pt nanoparticles covered one microwire-based heterojunction

Owing to great luminescent monochromaticity, high stability, and independent of automatic color filter, low dimensional ultraviolet light-emitting diodes (LEDs) via the hyperpure narrow band have attracted considerable interest for fabricating miniatured display equipments, solid state lighting sources, and other ultraviolet photoelectrical devices. In this study, a near-ultraviolet LED composed of one Ga-doped ZnO microwire (ZnO:Ga MW) and p-GaN layer was fabricated. The diode can exhibit bright electroluminescence (EL) peaking at 400.0 nm, with a line width of approximately 35 nm. Interestingly, by introducing platinum nanoparticles (PtNPs), we achieved an ultraviolet plasmonic response; an improved EL, including significantly enhanced light output; an observed blueshift of main EL peaks of 377.0 nm; and a reduction of line width narrowing to 10 nm. Working as a powerful scalpel, the decoration of PtNPs can be employed to tailor the spectral line profiles of the ultraviolet EL performances. Also, a rational physical model was built up, which could help us study the carrier transportation, recombination of electrons and holes, and dynamic procedure of luminescence. This method offers a simple and feasible way, without complicated fabricating technology such as an added insulating layer or core shell structure, to realize hyperpure ultraviolet LED. Therefore, the proposed engineering of energy band alignment by introducing PtNPs can be employed to build up high performance, high spectral purity luminescent devices in the short wavelengths.

Plasmon-enhanced strong exciton-polariton coupling in single microwire-based heterojunction light-emitting diodes

Manipulating the strong light-matter coupling interaction in optical microresonators that are naturally formed by semiconductor micro- or nanostructures is crucial for fabricating high-performance exciton-polariton devices. Such devices can function as coherent light sources having considerably lower emission threshold. In this study, an exciton-polariton light-emitting diode (LED), made of a single ZnO microwire (MW) and a p-GaN substrate, serving as the hole injector, was fabricated, and its working characteristics, in the near-ultraviolet region, were demonstrated. To further improve the quality of the single ZnO MW-based optical microresonator, Ag nanowires (AgNWs) with ultraviolet plasmonic response were deposited on the MW. Apart from the improvement of the electrical and optical properties of the hexagonal ZnO MW, the optically pumped whispering-gallery-mode lasing characteristics were significantly enhanced. Furthermore, a single ZnO MW not covered, and covered by AgNWs, was used to construct a heterojunction LED. Compared with single bare ZnO MW-based LED, significant enhancement of the device performance was achieved, including a significant enhancement in the light output and a small emission band blueshift. Specifically, the exciton-polariton emission was observably enhanced, and the corresponding Rabi splitting energy (∼ 495 meV) was significantly higher than that of the bare ZnO MW-based LED (∼ 370 meV). That ultraviolet plasmons of AgNWs enhanced the exciton-polariton coupling strength was further confirmed via angle-resolved electroluminescence measurements of the single MW-based polaritonic devices, which clearly illustrated the presence of Rabi splitting and subband anti-crossing characteristics. The experimental results provide new avenues to achieve extremely high coupling strengths, which can accelerate the advancements in electrically driven high-efficiency polaritonic coherent emitters and nonlinear devices.