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Deng Z. Angle-Dependent Raman Spectra of Crystal Polymorphs of GaO: A Computational Study. Chemphyschem 2024; 25:e202300129. [PMID: 38095211 DOI: 10.1002/cphc.202300129] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/21/2023] [Revised: 12/13/2023] [Indexed: 01/25/2024]
Abstract
Two crystal polymorphs of GaO consisting of GaO-H and GaO-T monolayers are proposed in this study. Based on the density functional theory calculations, the phonon dispersion demonstrates that both GaO-H and GaO-T monolayers could be stable. The band gaps of GaO-H and GaO-T monolayers are 1.51 and 1.43 eV, respectively. When an external electric field is applied, the band gaps of GaO monolayers are reduced dramatically, down to 0.13 eV with the field of 0.7 V/Å. Because of the decreased symmetry of C3v under an external electric field, more peaks of Raman spectra can be obtained. The angle-dependent Raman spectra ofA ' 1 1 ${{\rm{A}}{{^\prime}}_1^1 }$ andA ' 1 2 ${{\rm{A}}{{^\prime}}_1^2 }$ of GaO-H monolayer, andA 1 g 1 ${{\rm{A}}_{1{\rm{g}}}^1 }$ andA 1 g 2 ${{\rm{A}}_{1{\rm{g}}}^2 }$ of GaO-T monolayer are discussed seperately, with the incident lasers of 488 and 532 nm. Additionally, the Raman intensity distribution shows that the incident light should be parallel to the plane of the GaO monolayer to obtain more comparable Raman spectra. These investigations of the crystal polymorphs of GaO monolayers may guide the experimental investigations of GaO monolayers and potential optoelectronic applications.
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Affiliation(s)
- Zexiang Deng
- School of Science, Guilin University of Aerospace Technology, Guilin, 541004, China
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Wong LW, Yang K, Han W, Zheng X, Wong HY, Tsang CS, Lee CS, Lau SP, Ly TH, Yang M, Zhao J. Deciphering the ultra-high plasticity in metal monochalcogenides. NATURE MATERIALS 2024; 23:196-204. [PMID: 38191634 DOI: 10.1038/s41563-023-01788-7] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/18/2023] [Accepted: 12/11/2023] [Indexed: 01/10/2024]
Abstract
The quest for electronic devices that offer flexibility, wearability, durability and high performance has spotlighted two-dimensional (2D) van der Waals materials as potential next-generation semiconductors. Especially noteworthy is indium selenide, which has demonstrated surprising ultra-high plasticity. To deepen our understanding of this unusual plasticity in 2D van der Waals materials and to explore inorganic plastic semiconductors, we have conducted in-depth experimental and theoretical investigations on metal monochalcogenides (MX) and transition metal dichalcogenides (MX2). We have discovered a general plastic deformation mode in MX, which is facilitated by the synergetic effect of phase transitions, interlayer gliding and micro-cracks. This is in contrast to crystals with strong atomic bonding, such as metals and ceramics, where plasticity is primarily driven by dislocations, twinning or grain boundaries. The enhancement of gliding barriers prevents macroscopic fractures through a pinning effect after changes in stacking order. The discovery of ultra-high plasticity and the phase transition mechanism in 2D MX materials holds significant potential for the design and development of high-performance inorganic plastic semiconductors.
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Affiliation(s)
- Lok Wing Wong
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong, China
- The Hong Kong Polytechnic University Shenzhen Research Institute, Shenzhen, China
| | - Ke Yang
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong, China
- The Hong Kong Polytechnic University Shenzhen Research Institute, Shenzhen, China
| | - Wei Han
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong, China
- The Hong Kong Polytechnic University Shenzhen Research Institute, Shenzhen, China
| | - Xiaodong Zheng
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong, China
- The Hong Kong Polytechnic University Shenzhen Research Institute, Shenzhen, China
| | - Hok Yin Wong
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong, China
- The Hong Kong Polytechnic University Shenzhen Research Institute, Shenzhen, China
| | - Chi Shing Tsang
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong, China
- The Hong Kong Polytechnic University Shenzhen Research Institute, Shenzhen, China
| | - Chun-Sing Lee
- Department of Chemistry and Center of Super-Diamond and Advanced Films (COSDAF), City University of Hong Kong, Kowloon, Hong Kong, China
| | - Shu Ping Lau
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong, China
| | - Thuc Hue Ly
- Department of Chemistry and Center of Super-Diamond and Advanced Films (COSDAF), City University of Hong Kong, Kowloon, Hong Kong, China.
- Department of Chemistry and State Key Laboratory of Marine Pollution, City University of Hong Kong, Kowloon, Hong Kong, China.
- City University of Hong Kong Shenzhen Research Institute, Shenzhen, China.
| | - Ming Yang
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong, China.
- The Hong Kong Polytechnic University Shenzhen Research Institute, Shenzhen, China.
| | - Jiong Zhao
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong, China.
- The Hong Kong Polytechnic University Shenzhen Research Institute, Shenzhen, China.
- The Research Institute for Advanced Manufacturing, The Hong Kong Polytechnic University, Kowloon, Hong Kong, China.
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Liao J, Wen W, Wu J, Zhou Y, Hussain S, Hu H, Li J, Liaqat A, Zhu H, Jiao L, Zheng Q, Xie L. Van der Waals Ferroelectric Semiconductor Field Effect Transistor for In-Memory Computing. ACS NANO 2023; 17:6095-6102. [PMID: 36912657 DOI: 10.1021/acsnano.3c01198] [Citation(s) in RCA: 5] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
In-memory computing is a highly efficient approach for breaking the bottleneck of von Neumann architectures, i.e., reducing redundant latency and energy consumption during the data transfer between the physically separated memory and processing units. Herein we have designed a in-memory computing device, a van der Waals ferroelectric semiconductor (InSe) based metal-oxide-ferroelectric semiconductor field-effect transistor (MOfeS-FET). This MOfeS-FET integrates memory and logic functions in the same material, in which the out-of-plane (OOP) ferroelectric polarization in InSe is used for data storage and the semiconducting property is used for the logic computation. The MOfeS-FET shows a long retention time with high on/off ratios (>106), high program/erase (P/E) ratios (103), and stable cyclic endurance. Moreover, inverter, programmable NAND, and NOR Boolean logic operations with nonvolatile storage of the results have all been demonstrated using our approach. These findings highlight the potential of van der Waals ferroelectric semiconductor-based MOfeS-FETs in the in-memory computing and their potential of achieving size scaling beyond Moore's law.
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Affiliation(s)
- Junyi Liao
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, P.R. China
- Department of Chemistry, Tsinghua University, Beijing 100084, P.R. China
- University of Chinese Academy of Sciences, Beijing 100049, P.R. China
| | - Wen Wen
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, P.R. China
| | - Juanxia Wu
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, P.R. China
| | - Yaming Zhou
- Department of Chemistry, Tsinghua University, Beijing 100084, P.R. China
| | - Sabir Hussain
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, P.R. China
| | - Haowen Hu
- School of Materials Science and Engineering, Tsinghua University, Beijing 100084, P.R. China
| | - Jiawei Li
- School of Materials Science and Engineering, Tsinghua University, Beijing 100084, P.R. China
| | - Adeel Liaqat
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, P.R. China
| | - Hongwei Zhu
- School of Materials Science and Engineering, Tsinghua University, Beijing 100084, P.R. China
| | - Liying Jiao
- Department of Chemistry, Tsinghua University, Beijing 100084, P.R. China
| | - Qiang Zheng
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, P.R. China
- University of Chinese Academy of Sciences, Beijing 100049, P.R. China
| | - Liming Xie
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, P.R. China
- University of Chinese Academy of Sciences, Beijing 100049, P.R. China
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Sui F, Jin M, Zhang Y, Hong J, Cheng Y, Qi R, Yue F, Huang R. Atomic insights into the influence of Bi doping on the optical properties of two-dimensional van der Waals layered InSe. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2022; 34:224006. [PMID: 35290970 DOI: 10.1088/1361-648x/ac5e07] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/14/2021] [Accepted: 03/15/2022] [Indexed: 06/14/2023]
Abstract
As a narrow-gap semiconductor, III-VI two-dimensional (2D) van der Waals layered indium selenide (InSe) has attracted a lot of attention due to excellent physical properties. For potential optoelectronic applications, the tunability of the optical property is challenging, e.g., the modulation of optical bandgap commonly by element doping. However, the deep understanding of the influence of element doping on the microstructure and the optical properties lacks of systematic investigation. In this work, by using aberration-corrected high-angle annular dark-field scanning transmission electron microscopy, we investigate the influence of Bi doping on controlling of the microstructure and optical properties of InSe single crystal in detail. The results show that Bi doping can introduce additional stacking faults in InSe single crystal, and more importantly, the atomic spacing and lattice constant of Bi-doped InSe are changed a lot as compared to that of the undoped one. Further optical characterizations including photoluminescence and transmission spectra reveal that Bi-doping can broaden the transmission wavelength range of InSe and make its optical bandgap blue-shift, which can also be physically interpreted from the doping-induced structure change. Our work expands new ideas for the optical property modulation of 2D thin-layer materials and brings new possibilities for the development of thin-layer InSe optical devices.
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Affiliation(s)
- Fengrui Sui
- Key Laboratory of Polar Materials and Devices (MOE), Department of Electronics, School of Physics and Electronic Science, East China Normal University, Shanghai 200062, People's Republic of China
| | - Min Jin
- College of Materials, Shanghai Dianji University, Shanghai 201306, People's Republic of China
| | - Yuanyuan Zhang
- Key Laboratory of Polar Materials and Devices (MOE), Department of Electronics, School of Physics and Electronic Science, East China Normal University, Shanghai 200062, People's Republic of China
| | - Jin Hong
- Key Laboratory of Polar Materials and Devices (MOE), Department of Electronics, School of Physics and Electronic Science, East China Normal University, Shanghai 200062, People's Republic of China
| | - Yan Cheng
- Key Laboratory of Polar Materials and Devices (MOE), Department of Electronics, School of Physics and Electronic Science, East China Normal University, Shanghai 200062, People's Republic of China
| | - Ruijuan Qi
- Key Laboratory of Polar Materials and Devices (MOE), Department of Electronics, School of Physics and Electronic Science, East China Normal University, Shanghai 200062, People's Republic of China
| | - Fangyu Yue
- Key Laboratory of Polar Materials and Devices (MOE), Department of Electronics, School of Physics and Electronic Science, East China Normal University, Shanghai 200062, People's Republic of China
| | - Rong Huang
- Key Laboratory of Polar Materials and Devices (MOE), Department of Electronics, School of Physics and Electronic Science, East China Normal University, Shanghai 200062, People's Republic of China
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