Integration of H2V3O8 nanowires and a GaN thin film for self-powered UV photodetectors

H₂V₃O₈/GaN n-n heterojunction ultraviolet photodetectors are fabricated via a facile dip-coating method. The Schottky junction between the GaN and H₂V₃O₈ builds a built-in electric field to achieve the self-powered phenomenon. The photodetector presents a high photocurrent (0.23 μA) and a fast response speed (less than 0.3 s) at 0 V bias and under 365 nm light illumination (24.50 mW cm^-2). Furthermore, the photocurrent increases steadily as the light intensity increases from 0.53 to 24.50 mW cm^-2. The H₂V₃O₈/GaN heterojunction holds great potential to realize high-performance hybrid PDs.

Novel solution synthesis of the overlooked cubic phase Cu2GeTe3 nanocrystals for optoelectronic devices

Herein, for the first time, we present a novel solution method for controllable synthesis of the overlooked cubic phase Cu₂GeTe₃ nanocrystals. The resulting Cu₂GeTe₃ nanocrystals are of high quality with monodispersed size and uniform shape. Optical characterization demonstrates that Cu₂GeTe₃ nanocrystals have a broad absorption in the visible to near-infrared region. Furthermore, an optoelectronic device based on Cu₂GeTe₃ nanocrystals exhibits excellent stability, reproducibility and responsivity. The novel synthetic route presented here not only can open a new avenue for fabricating Cu₂GeTe₃ nanocrystals, especially at the nanoscale, but also may further expand their applications.