Modelling the bulk properties of ambient pressure polymorphs of zirconia

Difference in reaction mechanism between ZnZrOx and InZrOx for CO2 hydrogenation

Oxide solid-solution catalysts, such as Zn-doped ZrO2 (ZnZrOx) and In-doped ZrO2 (InZrOx), exhibit distinctive catalytic capabilities for CH3OH synthesis via CO2 hydrogenation. We investigated the active site structures of these catalysts and their associated reaction mechanisms using both experimental and computational approaches. Electron microscopy and X-ray absorption spectroscopy reveal that the primary active sites are isolated cations, such as Zn2+ and In3+, dissolved in tetragonal ZrO2. Notably, for Zn2+, decomposition of the methoxy group, which is an essential intermediate in CH4 synthesis, is partially suppressed because of the relatively high stability of the methoxy group. Conversely, the methyl group strongly adsorbs on In3+, facilitating the conversion of the methoxy species into methyl groups. The decomposition of CH3OH is also suggested to contribute to CH4 synthesis. These results highlight the generation of CH4 as a byproduct of the InZrOx catalyst. Understanding the active site structure and elucidating the reaction mechanism at the atomic level are anticipated to contribute significantly to the future development of oxide solid-solution catalysts.

Unraveling different influences of the fraction of the tetragonal phase in oxide films on the corrosion resistance of Zr alloys from the phase transition mechanism

The mechanism of Sn and Nb influence on the fraction of tetragonal ZrO₂ in oxide films on Zr alloys and their influence mechanism on corrosion resistance of Zr alloys, despite decades of research, are ambiguous due to the lack of kinetic knowledge of phase evolution of ZrO₂ with doping. Using stochastic surface walking and density functional theory calculations, we investigate the influence of Nb and Sn on the stability of tetragonal (t) and monoclinic (m) ZrO₂, and t-m phase transition in oxide films. We found that though Nb and Sn result in similar apparent variation trends in the t-phase fraction in oxide films, their influences on t-m phase transition differ significantly, which is the underlying origin of different influences of the t-phase fraction in oxide films on the corrosion resistance of Zr alloys with Sn and Nb alloying. These results clarify an important aspect of the relationship between the microstructure and corrosion resistance of Zr alloys.

Stability of Hydroxo/Oxo/Fluoro Zirconates vs. Hafniates—A DFT Study

We performed density functional theory (DFT) calculations on binary and ternary oxo/fluoro crystals of the geochemical twin pair zirconium and hafnium to evaluate and compare their stabilities. This is the first DFT study on bulk ZrF4 or HfF4, as well as on a hypothetical ZrOF2 or HfOF2 bulk crystal. For α-MO2, β-MF4 and MOF2, we have found significantly higher cohesive energies for the respective hafnium species. This suggests a considerable gap in affinity toward fluorine and oxygen between the twin pair in the solid state. In agreement with experimental findings, this gap is slightly more pronounced for fluorine. This study is also the first to evaluate the theoretical, endothermic mono-hydroxylation of the respective fluorides or oxyfluorides to model the difference in affinity toward fluoride versus hydroxide. For these, we could also find a slight energetic preference for the hafnium compound.

Influence of Th, Zr, and Ti Dopants on Solution Property of Xe in Uranium Dioxide with Defects: A DFT + U Study

To ensure the safety and efficient operation of nuclear reactors, it is imperative to understand the effects of various dopants (Ti, Th, and Zr) on the solubility of the fission product Xe in UO2. In this study, Hubbard corrected density functional theory (DFT + U) and occupation matrix control were used to investigate the bulk and defect properties of UO2. The results show that the UO2-Ti system is more favorable for Xe dissolution in vacancies, whereas the UO2-Th system has little effect on the dissolution of Xe atoms. Th, Zr, and Ti inhibit the aggregation of Xe clusters, and Ti is the least favorable for the nucleation and growth of Xe clusters.

Cation-doping strategies for tuning of zirconia acid-base properties

The role of Y-, Ca- and Ce-doping of cubic zirconia (c-ZrO₂) (111) surface on its acidity, basicity and the interplay between surface acid-base pairs is investigated by computational methods. The most stable surface structures for this investigation were initially determined based on previous studies of Y-doped c-ZrO₂ (111) and by a detailed exploration of the most stable configuration for Ca-doped c-ZrO₂ (111) and Ce-doped c-ZrO₂ (111). Next, surface mapping by basic probe molecules (NH₃ and pyridine) revealed a general reduction of the acidity of the surface sites, although a few exceptions were observed for zirconium ions at next nearest neighbour (NNN) positions to the oxygen vacancy and at the nearest neighbour (NN) position to the dopants. Adsorption of CO₂ over basic sites revealed a cooperative interplay between acid-base groups. In this case, the overall effect observed was the decrease of the calculated adsorption energies when compared with the pristine surface. Moreover, spontaneous formation of η ³-CO₂ systems from initial η ²-CO₂ configurations indicates a decrease in the required energy for forming oxygen vacancies in the doped ZrO₂ systems at NNN positions or further away from the existing vacancy site.

Role of Sulfation of Zirconia Catalysts in Vapor Phase Ketonization of Acetic Acid

The effect of the sulfation of zirconia catalysts on their structure, acidity/basicity, and catalytic activity/selectivity toward the ketonization of organic acids is investigated by a combined experimental and computational method. Here, we show that, upon sulfation, zirconia catalysts exhibit a significant increase in their Brønsted and Lewis acid strength, whereas their Lewis basicity is significantly reduced. Such changes in the interplay between acid-base sites result in an improvement of the selectivity toward the ketonization process, although the measured conversion rates show a significant drop. We report a detailed DFT investigation of the putative surface species on sulfated zirconia, including the possible formation of dimeric pyrosulfate (S₂O₇ ^2-) species. Our results show that the formation of such a dimeric system is an endothermic process, with energy barriers ranging between 60.0 and 70.0 kcal mol^-1, and which is likely to occur only at high SO₄ ^2- coverages (4 S/nm²), high temperatures, and dehydrating conditions. Conversely, the formation of monomeric species is expected at lower SO₄ ^2- coverages, mild temperatures, and in the presence of water, which are the usual conditions experienced during the chemical upgrading of biofuels.

Band Structure Engineering and Optical Properties of Pristine and Doped Monoclinic Zirconia (m-ZrO2): Density Functional Theory Theoretical Prospective

Recently, monoclinic ZrO2 has received great technological importance because of its remarkable dielectric properties, high chemical stability, and high melting point. Herein, we introduce first-principles calculations using the Hubbard approach (DFT + U) to study the effects of doping with Nb and W on the electronic and optical properties of pristine ZrO2. The introduction of dopant atoms into the pristine crystal structure led to the displacement of the bandgap edges and reallocation of the Fermi level. The valence band maximum (VBM) shifted upward, resulting in band gap tightening from 5.79 to 0.89 for ZrO2: Nb and to 1.33 eV for ZrO2: W. The optical absorption of doped crystals extended into the visible and near-infrared regions. Partial density of states (PDOS) calculations showed valence band dependency on the O 2p orbital energy, with the conduction band predominantly composed of Nb 4d and W 5d. For pristine ZrO2, the results obtained for the imaginary and real parts of the dielectric function, the refractive index, and the reflectivity show good agreement with the available experimental and theoretical results. For ZrO2:W, we checked the dopant location effect, and the obtained results showed no significant effect on the calculated values of the band gap with a maximum difference of 0.17 eV. Significant band gap tightening and optical properties of our systems indicate that these systems could be promising candidates for photoelectrochemical energy conversion (PEC) applications.

A computational investigation of the adsorption of small copper clusters on the CeO2(110) surface

We report a detailed density functional theory (DFT) study of the geometrical and electronic properties, and the growth mechanism of a Cu_n (n = 1-4) cluster on a stoichiometric, and especially on a defective CeO₂(110) surface with one surface oxygen vacancy, without using pre-assumed gas-phase Cu_n cluster shapes. This gives new and valuable theoretical insight into experimental work regarding debatable active sites of promising CuO_x/CeO₂-nanorod catalysts in many reactions. We demonstrate that CeO₂(110) is highly reducible upon Cu_n adsorption, with electron transfer from Cu_n clusters, and that a Cu_n cluster grows along the long bridge sites until Cu₃, so that each Cu atom can interact strongly with surface oxygen ions at these sites, forming stable structures on both stoichiometric and defective CeO₂(110) surface. Cu-Cu interactions are, however, limited, since Cu atoms are distant from each other, inhibiting the formation of Cu-Cu bonds. This monolayer then begins to grow into a bilayer as seen in the Cu₃ to Cu₄ transition, with long-bridge site Cu as anchoring sites. Our calculations on Cu₄ adsorption reveal a Cu bilayer rich in Cu⁺ species at the Cu-O interface.

Enhanced Adhesion Energy at Oxide/Ag Interfaces for Low-Emissivity Glasses: Theoretical Insight into Doping and Vacancy Effects

Low-emissivity glasses rely on multistacked architectures with a thin silver layer sandwiched between oxide layers. The mechanical stability of the silver/oxide interfaces is a critical parameter that must be maximized. Here, we demonstrate by means of quantum-chemical calculations that a low work of adhesion at interfaces can be significantly increased via doping and by introducing vacancies in the oxide layer. For the sake of illustration, we focus on the ZrO₂(111)/Ag(111) interface exhibiting a poor adhesion in the pristine state and quantify the impact of introducing n-type dopants or p-type dopants in ZrO₂ and vacancies in oxygen atoms (nV_O; with n = 1, 2, 4, 8, 10, 16), zirconium atoms (mV_Zr; with m = 1, 2, 4, 8), or both (nV_O + mV_Zr; with m/n = 1:2, 1:4, 2:2, 2:4). In the case of doping, interfacial electron transfer promotes an increase in the work of adhesion, from initially 0.16 to ∼0.8 J m^-2 (n-type) and ∼2.0 J m^-2 (p-type) at 10% doping. A similar increase in the work of adhesion is obtained by introducing vacancies, e.g., V_O [V_Zr] in the oxide layer yields a work of adhesion of ∼1.5-2.0 J m^-2 at 10% vacancies. An increase is also observed when mixing V_O and V_Zr vacancies in a nonstoichiometric ratio (nV_O + mV_Zr; with 2n ≠ m), while a stoichiometric ratio of V_O and V_Zr has no impact on the interfacial properties.

CO2 capture, activation and dissociation on the Ti2C surface and Ti2C MXene: the role of surface structure

Barrier-less CO₂ activation on Ti₂C(100) and MXene with preferential adsorption on the (100) surface and a lower dissociation barrier on MXene.