Unveiling a New 2D Semiconductor: Biphenylene-Based InN

The two-dimensional (2D) materials class earned a boost in 2021 with biphenylene synthesis, which is structurally formed by the fusion of four-, six-, and eight-membered carbon rings, usually named 4-6-8-biphenylene network (BPN). This research proposes a detailed study of electronic, structural, dynamic, and mechanical properties to demonstrate the potential of the novel biphenylene-like indium nitride (BPN-InN) via density functional theory and molecular dynamics simulations. The BPN-InN has a direct band gap energy transition of 2.02 eV, making it promising for optoelectronic applications. This structure exhibits maximum and minimum Young modulus of 22.716 and 22.063 N/m, Poisson ratio of 0.018 and -0.008, and Shear modulus of 11.448 and 10.860 N/m, respectively. To understand the BPN-InN behavior when subjected to mechanical deformations, biaxial and uniaxial strains in armchair and zigzag directions from -8 to 8% were applied, achieving a band gap energy modulation of 1.36 eV over tensile deformations. Our findings are expected to motivate both theorists and experimentalists to study and obtain these new 2D inorganic materials that exhibit promising semiconductor properties.

Theoretical study of electronic and nonlinear optical properties of novel graphenylene-based materials with donor-acceptor frameworks

A new functionalized graphenylene-based structure was designed by adsorbing of alkali metals M₃ and superalkali M₃O (M = Li, Na, K) on graphenylene (BPC) surface. The spectral data show that the spectral properties of the M₃O@BPC system are very similar because the two-dimensional material plays a major role in the main transition. However, for M₃@BPC system, the spectral shapes of the three systems show significant changes compared to each other because the different alkali metals play a major role in the main transition process. The calculation results show that the introduction of superalkali does not significantly increase the first polarizability; however, the introduction of alkali metals can obtain considerable nonlinear optical materials. For M₃@BPC system, the first hyperpolarizability increases significantly when heavier alkali metal is introduced into the two-dimensional structure, which is found to be 866,290.9 au for K₃@ BPC. A two-level model and first hyperpolarizability density can explain the large first polarizability of these systems.

Reducibility Studies of Ceria, Ce0.85Zr0.15O2 (CZ) and Au/CZ Catalysts after Alkali Ion Doping: Impact on Activity in Oxidation of NO and CO

The aim of these studies was to perform thorough research on the influence of alkali metal ions (Li, Na, K and Cs) on the properties of nanogold catalysts supported on ceria–zirconia. The addition of alkali metal ions onto CeO2 further affected the reducibility, which was not noted for the Zr-doped support (Ce0.85Zr0.15O2). Despite the substantial impact of alkali metal ions on the reducibility of ceria, the activity in CO oxidation did not change much. In contrast, they do not have a large effect on the reducibility of Au/CZ but suppressed the activity of this system in CO oxidation. The results show that for CO oxidation, the negative effect of potassium ions is greater than that of sodium, which corresponds to the shift in the Tmax of the reduction peak towards higher temperatures. The negative effect of Li+ and Cs+ spans 50% CO conversion. The negative effect was visible for CO oxidation in both the model stream and the complex stream, which also contained hydrocarbons and NO. In the case of NO oxidation to NO2, two temperature regimes were observed for Au + 0.3 at% K/CZ, namely in the temperature range below 350 °C; the effect of potassium ions was beneficial for NO oxidation, whereas at higher temperatures, the undoped gold catalyst produced more NO2.

Graphenylene-supported single-atom (Ru and Mo) catalysts for CO and NO oxidations

Based on density functional theory (DFT) calculations, the adsorption geometries, stability and catalytic properties of single-atom Ru and Mo anchored on graphenylene sheets (gra-Ru and gra-Mo) are comparatively investigated.

Graphenylene-based nanoribbons for novel molecular electronic devices

In the last decade, graphene has been frequently cited as one of the most promising materials for nanoelectronics. However, despite its outstanding mechanical and electronic properties, its use in the production of real nanoelectronic devices usually imposes some practical difficulties. This happens mainly due to the fact that, in its pristine form, graphene is a gapless material. We investigate theoretically the possibility of obtaining rectifying nanodevices using another carbon based two dimensional material, namely the graphenylene. This material has the advantage of being an intrinsic semiconductor, posing as a promising material for nanoelectronics. By doping graphenylene, one could obtain 2-dimensional p-n junctions, which can be useful for the construction of low dimensional electronic devices. We propose 2-dimensional diodes in which a clear rectification effect was demonstrated, with a conducting threshold of approximately 1.5 eV in direct bias and current blocking with opposite bias. During these investigations were found specific configurations that could result in devices with Zener-like behavior. Also, one unexpected effect was identified, which was the existence of transmission dips in electronic conductance plots. This result is discussed as a related feature to what was found in graphene nanoribbon systems under external magnetic fields, even though the external field was not a necessary ingredient to obtain such effect in the present case.