Fullerene-based 0D ferroelectrics/multiferroics for ultrahigh-density and ultrafast nonvolatile memories

Electrode-Supported Endohedral Metallofullerenes: Insights into the Confined Internal Dynamics

Endohedral metallofullerenes show great promise as molecular-scale memory units due to their robust architecture and protective capability for encapsulated atoms. However, the flat potential-energy surface within the cage often results in a severe disorder of encapsulated atoms. Here, we focused on prototypical systems involving Li@C60 on metallic surfaces, emphasizing the electrode's confinement effect on caged dynamics. We demonstrated that the varying interfacial stabilities induced by Li motion predominantly depend on the synergetic effect of van der Waals forces and covalent bonds rather than the previously assumed electrostatic interactions. We unveiled that the repulsion effect between encapsulated atom and the metal electrode primarily arises from the antibonding states between the metal states below the Fermi level and the degenerated frontier orbitals from HOMO-4 to HOMO. By manipulating orbital interactions, we observed an ordered arrangement of the encapsulated atom on Rec-Pt(111) at room temperature. Furthermore, our findings underscore the disruptive influence of electric fields on the stability of distinct Li positions, a phenomenon closely tied to the dipole moment induced by Li motion. This research provides a new perspective on the confined internal dynamics of endohedral metallofullerenes by manipulating cage-electrode interactions, contributing to precisely controlled molecular electronics.

Toward Ultimate Memory with Single-Molecule Multiferroics

The demand for high-density storage is urgent in the current era of data explosion. Recently, several single-molecule (-atom) magnets and ferroelectrics have been reported to be promising candidates for high-density storage. As another promising candidate, single-molecule multiferroics are not only small in size but also possess ferroelectric and magnetic orderings, which can sometimes be strongly coupled and used as data storage to realize the combination of electric writing and magnetic reading. However, they have been rarely proposed and have never been experimentally reported. Here, by building Hamiltonian models, we propose a new model of single-molecule multiferroics in which electric dipoles and magnetic moments are parallel and can rotate with the rotation of the single molecule. Furthermore, by performing spin-lattice dynamics simulations, we reveal the conditions (e.g., large enough single-ion anisotropy and an appropriate electric field) under which the new single-molecule multiferroic can arise. Based on this model, as well as first-principles calculations, a realistic example of Co(NH3)4N@SWCNT is constructed and numerically confirmed to demonstrate the feasibility of the new single-molecule multiferroic model. Our work not only sheds light on the discovery of single-molecule multiferroics but also provides a new guideline to design multifunctional materials for ultimate memory devices.

Discovery of Ferroelectricity in the Fullerene Adduct C60S8

Fullerenes offer versatile functionalities and are promising materials for a widespread range of applications from biomedicine and energy to electronics. Great efforts have been made to manipulate the symmetries of fullerene and its derivatives for studying material properties and novel effects, such as ferroelectricity with polar symmetry; however, no documentary report has been obtained to realize their ferroelectricity. Here, for the first time, we demonstrated clear ferroelectricity in a fullerene adduct formed by C60 and S8. More is different: the combination of the most symmetric molecule C60 with the highest Ih symmetry and molecule S8 with high D4d symmetry resulted in the polar C60S8 adduct with a low crystallographic symmetry of the C2v (mm2) point group at room temperature. The presented C60S8 undergoes polar-to-polar ferroelectric phase transition with the mm2Fm notation, whose ferroelectricity was confirmed by a ferroelectric hysteresis loop and ferroelectric domain switching. This finding opens up a new functionality for fullerenes and sheds light on the exploration of more ferroelectric fullerenes.

Bias-tunable two-dimensional magnetic and topological materials

The search for novel two-dimensional (2D) materials is crucial for the development of next generation technologies such as electronics, optoelectronics, electrochemistry and biomedicine. In this work, we designed a series of 2D materials based on endohedral fullerenes and revealed that many of them integrate different functions in a single system, such as ferroelectricity with large electric dipole moments, multiple magnetic phases with both strong magnetic anisotropy and high Curie temperature, and quantum spin Hall effect or quantum anomalous Hall effect with robust topologically protected edge states. We further proposed a new type of topological field-effect transistor. These findings provide a strategy for using fullerenes as building blocks for the synthesis of novel 2D materials which can be easily controlled with a local electric field.

Oxidation states of gallium (infrequent i and common iii) tunable via medium-sized C60 and small-sized C28 fullerenes

Differently sized fullerenes are shown to be flexible tools for tuning the oxidation states of gallium, and a fluoridation strategy facilitates the further stabilization of Ga@I_h(1812)-C₆₀.