Thermal transport and spin-dependent Seebeck effect in parallel step-like zigzag graphene nanoribbon junctions

Spin-thermoelectric properties and giant tunneling magnetoresistance of boron-substituted graphene nanoribbon: a first principle study

In this study we have designed a spin caloritronic device based on boron doped armchair graphene nanoribbons (B2-7AGNR). In presence of ferromagnetic (FM) graphitic-carbon nitride (g-C₄N₃) electrodes the spin-thermoelectric features of the device, both for FM and antiferromagnetic (AFM) states, are studied using first principle calculations. The spin polarized transmission peaks and the presence of density of states near the Fermi level indicate that the system have large spin-thermoelectric figure of merit. In addition, it is observed that the system has a large tunneling magnetoresistance due to the difference in total current between FM and AFM configurations. Further studies reveal that the spin component of the Seebeck coefficient of the device is much higher than the other zigzag and armchair nanoribbons. When the spin magnetic moments of the electrodes are aligned in parallel manner, spin-thermoelectric figure of merit of the system becomes significantly high. It has also been found that on decreasing temperature the efficiency of the device increases. As a whole, the numerical results show thatg-C₄N₃-B2-7AGNR-g-C₄N₃system in FM configuration is an efficient low temperature thermoelectric device.

Vacancy tuned thermoelectric properties and high spin filtering performance in graphene/silicene heterostructures

The main contribution of this paper is to study the spin caloritronic effects in defected graphene/silicene nanoribbon (GSNR) junctions. Each step-like GSNR is subjected to the ferromagnetic exchange and local external electric fields, and their responses are determined using the nonequilibrium Green's function (NEGF) approach. To further study the thermoelectric (TE) properties of the GSNRs, three defect arrangements of divacancies (DVs) are also considered for a larger system, and their responses are re-evaluated. The results demonstrate that the defected GSNRs with the DVs can provide an almost perfect thermal spin filtering effect (SFE), and spin switching. A negative differential thermoelectric resistance (NDTR) effect and high spin polarization efficiency (SPE) larger than 99.99% are obtained. The system with the DV defects can show a large spin-dependent Seebeck coefficient, equal to S_s ⁓ 1.2 mV/K, which is relatively large and acceptable. Appropriate thermal and electronic properties of the GSNRs can also be obtained by tuning up the DV orientation in the device region. Accordingly, the step-like GSNRs can be employed to produce high efficiency spin caloritronic devices with various features in practical applications.