Thermal transport properties of graphite carbon nitride

Thermal Transport Properties of Sulfur-Loaded Carbon-Based Nanotubes and Composite Sulfur Cathodes in Lithium-Sulfur Batteries

The thermal management of lithium-sulfur batteries with high specific energy has become one of the critical issues for their applications. Carbon-based nanotubes are widely used to construct composite sulfur cathodes. This paper focuses on the thermal transport properties of sulfur-coated and sulfur-embedded boron carbide nanotubes (BCNTs) and carbon nanotubes (CNTs) and their composites using molecular dynamics. It is found that phonon softening and localization play a role in making BCNT exhibit a lower thermal conductivity (TC) than CNT. Furthermore, it is discovered that the sulfur embedded inside the carbon-based nanotube has a greater negative impact on carbon-based nanotube phonon transport. Moreover, the effective medium theory model is not suitable for predicting the effective thermal conductivity of coated sulfur composites, in contrast to its good applicability to embedded sulfur composites. These findings provide an in-depth understanding of the thermal transport properties of composite sulfur cathodes in lithium-sulfur batteries.

Modulation of the thermal conductivity, interlayer thermal resistance, and interfacial thermal conductance of C2N

C₂N, a novel 2D semiconductor with orderly distributed holes and nitrogen atoms, has attracted significant attention due to its possible practical applications. This paper investigates the in-plane thermal conductivity and interlayer thermal resistance of C₂N and the interfacial thermal conductance of in-plane heterostructures assembled by C₂N and carbonized C₂N(C-C₂N) using molecular dynamics simulations. The in-plane thermal conductivities of C₂N monolayers along zigzag and armchair directions are 73.2 and 77.3 W m^-1 K^-1, respectively, and can be effectively manipulated by point defects, chemical doping, and strain engineering. Remarkably, nitrogen vacancies have a more substantial impact on reducing the thermal conductivity than carbon vacancies because of the more pronounced suppression of the high-frequency peaks. The difference in doping sites leads to a change in phonon mode localization. When the C₂N size is small, as the tensile strain increases, k_i is affected by dimensional lengthening due to stretching in addition to tensile strain. The interlayer thermal resistance decreases with increasing layer number and interlayer coupling strength. The AA stacking gives rise to a lower thermal resistance than the AB stacking when the heat flow passes through the multilayer due to the weaker in-plane bonding strength. Moreover, various possible atomic structures of C₂N/C-C₂N in-plane heterojunctions and the effect of carbon and nitrogen vacancies on interfacial thermal conductance are explored. The results provide valuable insights into the thermal transport properties in the application of C₂N-based electronic devices.