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Zhang X, Jiang D, Han Y, Gao Y. Effects of high pressure on the lattice structure and electrical transport properties of BiOI. Phys Chem Chem Phys 2023; 25:6288-6294. [PMID: 36762578 DOI: 10.1039/d2cp05231h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/11/2023]
Abstract
To reveal the pressure effects on BiOX semiconductors, we performed in-situ Raman spectroscopy and electrical transport measurements on BiOI up to 26.1 GPa and 19.2 GPa. BiOI showed good structural stability, while the electron conduction characteristics maintained dominance throughout the pressure range. The influence of grain boundary conduction disappeared at pressures above 9.2 GPa. With pressure elevation, the pressure-induced lattice fragmentation and grain refinement introduced a large number of relevant levels in the energy gap and resulted in a significant increase in the conductivity of BiOI under compression. The conductivity increased by 106 at 19.2 GPa from the initial value and maintained an increase of 102 after depressurization until ambient conditions were attained. At the same time, the space charge polarization of the crystal interface layer became weaker with pressure elevation resulting in a decrease in the relative permittivity of BiOI. The calculation results of the complex permittivity showed that the frequency of orientation polarization response decreases with pressure elevation, and the complex permittivity becomes constant in the high-frequency region. Our work proves that pressure could significantly increase the carrier concentration and mobility, thus effectively improving the conductivity of BiOX semiconductors.
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Affiliation(s)
- Xiaotong Zhang
- State Key Laboratory of Superhard Materials, Jilin University, Changchun 130012, China.
| | - Dawei Jiang
- State Key Laboratory of Superhard Materials, Jilin University, Changchun 130012, China.
| | - Yonghao Han
- State Key Laboratory of Superhard Materials, Jilin University, Changchun 130012, China.
| | - Yang Gao
- Center for High Pressure Science and Technology Advanced Research, Beijing 10094, China. .,Shanghai Institute of Laser Plasma, Shanghai 200000, China
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Zhao L, Liu H, Tong S, Wang J, Han T, Liu C, Gao C, Han Y. Application of impedance spectroscopy in exploring electrical properties of dielectric materials under high pressure. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2022; 34:434001. [PMID: 35973420 DOI: 10.1088/1361-648x/ac8a33] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/21/2022] [Accepted: 08/16/2022] [Indexed: 06/15/2023]
Abstract
Impedance spectroscopy (IS) is an indispensable method of exploring electrical properties of materials. In this review, we provide an overview on the specific applications of IS measurement in the investigations of various electrical properties of materials under high pressure, including electric conduction in bulk and grain boundary, dielectric properties, ionic conduction, and electrostrictive effect. Related studies are summarized to demonstrate the method of analyzing different electrical transport processes with various designed equivalent circuits of IS and reveal some interesting phenomena of electrical properties of materials under high pressure.
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Affiliation(s)
- Lin Zhao
- State Key Laboratory of Superhard Materials, Jilin University, Changchun 130012, People's Republic of China
| | - Hao Liu
- State Key Laboratory of Superhard Materials, Jilin University, Changchun 130012, People's Republic of China
| | - Shuang Tong
- State Key Laboratory of Superhard Materials, Jilin University, Changchun 130012, People's Republic of China
| | - Jia Wang
- Institute for Interdisciplinary Biomass Functional Materials Studies, Jilin Engineering Normal University, Changchun 130052, People's Republic of China
| | - Tao Han
- State Key Laboratory of Superhard Materials, Jilin University, Changchun 130012, People's Republic of China
| | - Cailong Liu
- Shandong Key Laboratory of Optical Communication Science and Technology, School of Physical Science and Information Technology of Liaocheng University, Liaocheng 252059, People's Republic of China
| | - Chunxiao Gao
- State Key Laboratory of Superhard Materials, Jilin University, Changchun 130012, People's Republic of China
| | - Yonghao Han
- State Key Laboratory of Superhard Materials, Jilin University, Changchun 130012, People's Republic of China
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Liu H, Wang J, Zhang G, Han Y, Wu B, Gao C. Pressure effects on the metallization and dielectric properties of GaP. Phys Chem Chem Phys 2021; 23:26829-26836. [PMID: 34817490 DOI: 10.1039/d1cp03889c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
In situ impedance measurement, resistivity measurements and first-principles calculations have been performed to investigate the effect of high pressure (up to 30.2 GPa) on the metallization and dielectric properties of GaP. It is found that the carrier transport process changes from mixed grain and grain boundary conduction to pure grain conduction at 5.8 GPa, and due to pressure-induced structural phase transition, the resistance drops drastically by three orders of magnitude at 25.5 GPa. Temperature dependence of resistivity measurements and band structure calculations suggest the occurrence of a semiconductor-metal transition. Combining differential charge density and dielectric analysis, it is observed that the electron localization is weakened, which leads to increased polarization and larger relative permittivity in the zb structure. After the phase transition, both the polarization and the relative permittivity decrease. Pressure increases the complex dielectric constant and dielectric loss factor, due to the increase in relaxation polarization and the scattering effect of carriers. Moreover, by comparing the high-pressure behavior of GaP, GaAs and GaSb, the changes in the electronic structure and electric transport process caused by the phase transition can be understood, which can enable us to better understand the metallization behavior and dielectric properties of Ga-based III-V family semiconductors under pressure, and stimulate the design and modification of other related group III-V semiconductors for optoelectronic devices and sensors.
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Affiliation(s)
- Hao Liu
- State Key Laboratory for Superhard Materials, Jilin University, Changchun 130012, China. .,Department of Physics, College of Science, Yanbian University, Yanji, Jilin 133002, China.
| | - Jia Wang
- State Key Laboratory for Superhard Materials, Jilin University, Changchun 130012, China. .,Institute for Interdisciplinary Biomass Functional Materials Studies, Jilin Engineering Normal University, Changchun 130052, China
| | - Guozhao Zhang
- State Key Laboratory for Superhard Materials, Jilin University, Changchun 130012, China. .,Shandong Key Laboratory of Optical Communication Science and Technology, School of Physical Science and Information Technology, Liaocheng University, Liaocheng 252059, China
| | - Yonghao Han
- State Key Laboratory for Superhard Materials, Jilin University, Changchun 130012, China.
| | - Baojia Wu
- Department of Physics, College of Science, Yanbian University, Yanji, Jilin 133002, China.
| | - Chunxiao Gao
- State Key Laboratory for Superhard Materials, Jilin University, Changchun 130012, China.
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