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Zhang J, Chen S, Du G, Yu Y, Han W, Xia Q, Jin K, Chen Y. Experimental Observation of Highly Anisotropic Elastic Properties of Two-Dimensional Black Arsenic. NANO LETTERS 2023; 23:8970-8977. [PMID: 37782043 DOI: 10.1021/acs.nanolett.3c02515] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/03/2023]
Abstract
Anisotropic two-dimensional layered materials with low-symmetry lattices have attracted increasing attention due to their unique orientation-dependent mechanical properties. Black arsenic (b-As), with the puckered structure, exhibits extreme in-plane anisotropy in optical, electrical, and thermal properties. However, experimental research on mechanical properties of b-As is very rare, although theoretical calculations predicted the exotic elastic properties of b-As, such as the anisotropic Young's modulus and negative Poisson's ratio. Herein, experimental observations on highly anisotropic elastic properties of b-As were demonstrated using our developed in situ tensile straining setup based on the effective microelectromechanical system. The cyclic and repeatable load-displacement curves proved that Young's modulus along the zigzag direction was ∼1.6 times greater than that along the armchair direction, while the anisotropic ratio of ultimate strain reached ∼2.5, attributed to the hinge structure in the armchair direction. This study could provide significant insights into the design of novel anisotropic materials and explore their potential applications in nanomechanics and nanodevices.
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Affiliation(s)
- Jingjing Zhang
- Advanced Research Institute of Multidisciplinary Sciences (ARIMS), Beijing Institute of Technology, Beijing 100081, P. R. China
- School of Aerospace Engineering, Beijing Institute of Technology, Beijing 100081, P. R. China
| | - Shang Chen
- Advanced Research Institute of Multidisciplinary Sciences (ARIMS), Beijing Institute of Technology, Beijing 100081, P. R. China
| | - Guoshuai Du
- Advanced Research Institute of Multidisciplinary Sciences (ARIMS), Beijing Institute of Technology, Beijing 100081, P. R. China
- School of Aerospace Engineering, Beijing Institute of Technology, Beijing 100081, P. R. China
| | - Yunfei Yu
- Advanced Research Institute of Multidisciplinary Sciences (ARIMS), Beijing Institute of Technology, Beijing 100081, P. R. China
- School of Aerospace Engineering, Beijing Institute of Technology, Beijing 100081, P. R. China
| | - Wuxiao Han
- Advanced Research Institute of Multidisciplinary Sciences (ARIMS), Beijing Institute of Technology, Beijing 100081, P. R. China
- School of Aerospace Engineering, Beijing Institute of Technology, Beijing 100081, P. R. China
| | - Qinglin Xia
- School of Physics and State Key Laboratory of Powder Metallurgy, Central South University, Changsha, Hunan 410083, P. R. China
| | - Ke Jin
- Advanced Research Institute of Multidisciplinary Sciences (ARIMS), Beijing Institute of Technology, Beijing 100081, P. R. China
| | - Yabin Chen
- Advanced Research Institute of Multidisciplinary Sciences (ARIMS), Beijing Institute of Technology, Beijing 100081, P. R. China
- School of Aerospace Engineering, Beijing Institute of Technology, Beijing 100081, P. R. China
- BIT Chongqing Institute of Microelectronics and Microsystems, Chongqing 400030, P. R. China
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Gao Y, Cheng Z, Wen M, Zhang X, Wu F, Dong H, Zhang G. New two-dimensional arsenene polymorph predicted by first-principles calculation: robust direct bandgap and enhanced optical adsorption. NANOTECHNOLOGY 2021; 32:245702. [PMID: 33652419 DOI: 10.1088/1361-6528/abeb3a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/30/2020] [Accepted: 03/02/2021] [Indexed: 06/12/2023]
Abstract
In this work, we predict a new polymorph of 2D monolayer arsenic. This structure, namedδ-As, consists of a centrosymmetric monolayer, which is thermodynamically and kinetically stable. Distinctly different from the previously predicted monolayer arsenic with an indirect bandgap, the new allotrope exhibits a direct bandgap characteristic. Moreover, while keeping the direct bandgap unchanged, the bandgap of monolayerδ-As can be adjusted from 1.83 eV to 0 eV by applying zigzag-direction tensile strain, which is pronounced an advantage for solar cell and photodetector applications.
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Affiliation(s)
- Yifan Gao
- School of Physics and Optoelectronic Engineering, Guangdong University of Technology, Guangzhou 510006, People's Republic of China
| | - Zixin Cheng
- Institute of Aerospace and Mechanics, Xi'an Jiaotong University, Xi'an 710000, People's Republic of China
| | - Minru Wen
- School of Physics and Optoelectronic Engineering, Guangdong University of Technology, Guangzhou 510006, People's Republic of China
| | - Xin Zhang
- School of Physics and Optoelectronic Engineering, Guangdong University of Technology, Guangzhou 510006, People's Republic of China
| | - Fugen Wu
- School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, People's Republic of China
| | - Huafeng Dong
- School of Physics and Optoelectronic Engineering, Guangdong University of Technology, Guangzhou 510006, People's Republic of China
| | - Gang Zhang
- Institute of High Performance Computing, A*STAR, Singapore 138632, Singapore
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