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Yu M, Zhang F, Gao W, Shen H, Kang L, Ju L, Yin H. Two-dimensional InTeClO 3: an ultrawide-bandgap material with potential application in a deep ultraviolet photodetector. Phys Chem Chem Phys 2023; 25:29241-29248. [PMID: 37874031 DOI: 10.1039/d3cp03612j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/25/2023]
Abstract
Ultrawide-bandgap semiconductors, possessing bandgaps distinctly larger than the 3.4 eV of GaN, have emerged as a promising class capable of achieving deep ultraviolet (UV) light detection. Based on first-principles calculations, we propose an unexplored two-dimensional (2D) InTeClO3 layered system with ultrawide bandgaps ranging from 4.34 eV of bulk to 4.54 eV of monolayer. Our calculations demonstrate that 2D InTeClO3 monolayer can be exfoliated from its bulk counterpart and maintain good thermal and dynamic stability at room temperature. The ultrawide bandgaps may be modulated by the small in-plane strains and layer thickness in a certain range. Furthermore, the 2D InTeClO3 monolayer shows promising electron transport behavior and strong optical absorption capacity in the deep UV range. A two-probe InTeClO3-based photodetection device has been constructed for evaluating the photocurrent. Remarkably, the effective photocurrent (5.7 A m-2 at photon energy of 4.2 eV) generation under polarized light has been observed in such a photodetector. Our results indicate that 2D InTeClO3 systems have strong photoresponse capacity in the deep UV region, accompanying the remarkable polarization sensitivity and high extinction ratio. These distinctive characteristics highlight the promising application prospects of InTeClO3 materials in the field of deep UV optoelectronics.
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Affiliation(s)
- Meiyang Yu
- Joint Center for Theoretical Physics, Institute for Computational Materials Science, and International Joint Research Laboratory of New Energy Materials and Devices of Henan Province, School of Physics and Electronics, Henan University, Kaifeng 475004, China.
| | - Fumin Zhang
- Joint Center for Theoretical Physics, Institute for Computational Materials Science, and International Joint Research Laboratory of New Energy Materials and Devices of Henan Province, School of Physics and Electronics, Henan University, Kaifeng 475004, China.
| | - Wenjiang Gao
- Joint Center for Theoretical Physics, Institute for Computational Materials Science, and International Joint Research Laboratory of New Energy Materials and Devices of Henan Province, School of Physics and Electronics, Henan University, Kaifeng 475004, China.
| | - Huimin Shen
- Joint Center for Theoretical Physics, Institute for Computational Materials Science, and International Joint Research Laboratory of New Energy Materials and Devices of Henan Province, School of Physics and Electronics, Henan University, Kaifeng 475004, China.
| | - Lili Kang
- Joint Center for Theoretical Physics, Institute for Computational Materials Science, and International Joint Research Laboratory of New Energy Materials and Devices of Henan Province, School of Physics and Electronics, Henan University, Kaifeng 475004, China.
| | - Lin Ju
- School of Physics and Electric Engineering, Anyang Normal University, Anyang 455000, China.
| | - Huabing Yin
- Joint Center for Theoretical Physics, Institute for Computational Materials Science, and International Joint Research Laboratory of New Energy Materials and Devices of Henan Province, School of Physics and Electronics, Henan University, Kaifeng 475004, China.
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Zhou L, Wang Q, Xu M, Hu C, Deng X, Li Y, Lv B, Wang W. Excellent thermoelectric properties of the Tl 2S 3 monolayer for medium-temperature applications. NANOSCALE 2023; 15:7971-7979. [PMID: 37067058 DOI: 10.1039/d2nr07006e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/05/2023]
Abstract
Exploring materials with high thermoelectric (TE) performance can alleviate energy pressure and protect the environment, and thus, TE materials have attracted extensive attention in the new energy field. In this paper, we systematically study the TE properties of Tl2S3 using first-principles combined with Boltzmann transport theory (BTE). The calculation results show an excellent power factor (1.12 × 10-2 W m-1 K-2) and ultra-low lattice thermal conductivity (kl = 0.88 W m-1 K-1) at room temperature. Through analysis, we attribute the ultra-low kl of Tl2S3 to the lower phonon group velocity (vg) and larger phonon anharmonicity. Meanwhile, discussion of chemical bonding showed that the filling of the anti-bonding state leads to the weakening of the Tl-S chemical bond, resulting in low vg. Furthermore, this research also investigates the scattering processes (the out-of-plane acoustic mode (ZA) + optical mode (O) → O (ZA + O → O), the in-plane transverse acoustic mode (TA) + O → O (TA + O → O), and the in-plane longitudinal acoustic mode (LA) + O → O (LA + O → O)), from which we find that 2D Tl2S3 possesses strong acoustic-optical scattering. Based on the analysis of electron transport properties under electron-phonon coupling, 2D Tl2S3, as a novel TE material, exhibits a ZT value as high as 2.8 at 400 K. Our calculations suggest that Tl2S3 is a potential TE material at medium temperature.
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Affiliation(s)
- Lang Zhou
- School of Physics and Electronic Science, Guizhou Normal University, Guiyang 550025, China.
- Key Laboratory of Low Dimensional Condensed Matter Physics of Higher Educational Institution of Guizhou Province, Guizhou Normal University, Guiyang 550025, China
| | - Qi Wang
- School of Physics and Electronic Science, Guizhou Normal University, Guiyang 550025, China.
- Key Laboratory of Low Dimensional Condensed Matter Physics of Higher Educational Institution of Guizhou Province, Guizhou Normal University, Guiyang 550025, China
| | - Mei Xu
- School of Physics and Electronic Science, Guizhou Normal University, Guiyang 550025, China.
- Key Laboratory of Low Dimensional Condensed Matter Physics of Higher Educational Institution of Guizhou Province, Guizhou Normal University, Guiyang 550025, China
| | - Chengwei Hu
- School of Physics and Electronic Science, Guizhou Normal University, Guiyang 550025, China.
- Key Laboratory of Low Dimensional Condensed Matter Physics of Higher Educational Institution of Guizhou Province, Guizhou Normal University, Guiyang 550025, China
| | - Xue Deng
- School of Physics and Electronic Science, Guizhou Normal University, Guiyang 550025, China.
- Key Laboratory of Low Dimensional Condensed Matter Physics of Higher Educational Institution of Guizhou Province, Guizhou Normal University, Guiyang 550025, China
| | - Yumin Li
- School of Physics and Electronic Science, Guizhou Normal University, Guiyang 550025, China.
- Key Laboratory of Low Dimensional Condensed Matter Physics of Higher Educational Institution of Guizhou Province, Guizhou Normal University, Guiyang 550025, China
| | - Bing Lv
- School of Physics and Electronic Science, Guizhou Normal University, Guiyang 550025, China.
- Key Laboratory of Low Dimensional Condensed Matter Physics of Higher Educational Institution of Guizhou Province, Guizhou Normal University, Guiyang 550025, China
| | - Wenzhong Wang
- School of Physics and Electronic Science, Guizhou Normal University, Guiyang 550025, China.
- Key Laboratory of Low Dimensional Condensed Matter Physics of Higher Educational Institution of Guizhou Province, Guizhou Normal University, Guiyang 550025, China
- School of Science, Minzu University of China, Beijing 100081, China
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Xu X, Jiang X, Gao Q, Yang L, Sun X, Wang Z, Li D, Cui B, Liu D. Enhanced photoelectric performance of MoSSe/MoS 2 van der Waals heterostructures with tunable multiple band alignment. Phys Chem Chem Phys 2022; 24:29882-29890. [PMID: 36468446 DOI: 10.1039/d2cp03761k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/17/2022]
Abstract
Janus MoSSe with mirror asymmetry has recently emerged as a new two-dimensional (2D) material with a sizeable out-of-plane dipole moment. Here, based on first-principles calculations, we theoretically investigate the electronic properties of two patterns of 2D MoSSe/MoS2 van der Waals heterostructures (vdWHs). The electronic properties of MoSSe can be tuned by the intrinsic out-of-plane dipole field. When the Se side of the Janus layer faces the MoS2 layer, the dipole field points from the MoSSe layer towards the MoS2 layer, and the vdWH possesses a type-I band alignment which is desirable for light emission applications. With a reversal of the Janus layer, the intrinsic field inverts accordingly, and the band alignment becomes a typical type-II band alignment, which benefits carrier separation. Moreover, it possesses superior optical absorption (∼105 cm-1), and the calculated photocurrent density under visible-light radiation is up to 0.9 mA cm-2 in the MoSSe/MoS2 vdWH. Meanwhile, an external electric field and vertical strain can remarkably modulate the band alignment to switch it between type-I and type-II. Thus, MoSSe/MoS2 vdWHs have promising applications in next-generation photovoltaic devices.
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Affiliation(s)
- Xuhui Xu
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China.
| | - Xinxin Jiang
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China.
| | - Quan Gao
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China.
| | - Lei Yang
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China.
| | - Xuelian Sun
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China.
| | - Zhikuan Wang
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China.
| | - Dongmei Li
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China.
| | - Bin Cui
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China.
| | - Desheng Liu
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China. .,Department of Physics, Jining University, Qufu 273155, China
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Jiang X, Gao Q, Xu X, Xu G, Li D, Cui B, Liu D, Qu F. Design of a noble-metal-free direct Z-scheme photocatalyst for overall water splitting based on a SnC/SnSSe van der Waals heterostructure. Phys Chem Chem Phys 2021; 23:21641-21651. [PMID: 34580681 DOI: 10.1039/d1cp03398k] [Citation(s) in RCA: 11] [Impact Index Per Article: 3.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/02/2023]
Abstract
Semiconductor photocatalysts, using sunlight to stimulate various photocatalytic reactions, are promising materials for solving the energy crisis and environmental problems. However, the low photocatalytic efficiency and high cost pose major challenges for their widespread application. Mimicking the natural photosynthesis system, we propose a direct Z-scheme photocatalyst based on a Janus van der Waals heterostructure (vdWH) comprising SnC and Janus SeSnS monolayers. From first-principles calculations, the intrinsic built-in electric field of Janus SeSnS and the charge transfer from the SnC to the SeSnS layer give rise to a type-II band alignment. Such a band alignment benefits the formation of spatially separated reductive and oxidative active sites and the reduction of the global bandgap of the Janus vdWH. The proposed material increases the solar-to-hydrogen conversion efficiency to 60.8%. Besides, we also find that the light absorption coefficient is stacking configuration controllable and strain-tunable, e.g., the tensile strain promotes photocatalytic efficiency. Moreover, because Sn, S, and Se are environmentally benign and inexpensive elements, SnC/SeSnS vdWH is a promising noble-metal-free direct Z-scheme photocatalyst.
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Affiliation(s)
- Xinxin Jiang
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China.
| | - Quan Gao
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China.
| | - Xuhui Xu
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China.
| | - Ge Xu
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China.
| | - Dongmei Li
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China.
| | - Bin Cui
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China.
| | - Desheng Liu
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China. .,Department of Physics, Jining University, Qufu 273155, China
| | - Fanyao Qu
- Instituto de Física, Universidade de Brasília, Brasília-DF 70919-970, Brazil
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Yao J, Yang G. Multielement 2D layered material photodetectors. NANOTECHNOLOGY 2021; 32:392001. [PMID: 34111857 DOI: 10.1088/1361-6528/ac0a16] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/31/2021] [Accepted: 06/10/2021] [Indexed: 06/12/2023]
Abstract
The pronounced quantum confinement effects, outstanding mechanical strength, strong light-matter interactions and reasonably high electric transport properties under atomically thin limit have conjointly established 2D layered materials (2DLMs) as compelling building blocks towards the next generation optoelectronic devices. By virtue of the diverse compositions and crystal structures which bring about abundant physical properties, multielement 2DLMs (ME2DLMs) have become a bran-new research focus of tremendous scientific enthusiasm. Herein, for the first time, this review provides a comprehensive overview on the latest evolution of ME2DLM photodetectors. The crystal structures, synthesis, and physical properties of various experimentally realized ME2DLMs as well as the development in metal-semiconductor-metal photodetectors are comprehensively summarized by dividing them into narrow-bandgap ME2DLMs (including Bi2O2X (X = S, Se, Te), EuMTe3(M = Bi, Sb), Nb2XTe4(X = Si, Ge), Ta2NiX5(X = S, Se), M2PdX6(M = Ta, Nb; X = S, Se), PbSnS2), moderate-bandgap ME2DLMs (including CuIn7Se11, CuTaS3, GaGeTe, TlMX2(M = Ga, In; X = S, Se)), wide-bandgap ME2DLMs (including BiOX (X = F, Cl, Br, I), MPX3(M = Fe, Ni, Mn, Cd, Zn; X = S, Se), ABP2X6(A = Cu, Ag; B = In, Bi; X = S, Se), Ga2In4S9), as well as topological ME2DLMs (MIrTe4(M = Ta, Nb)). In the last section, the ongoing challenges standing in the way of further development are underscored and the potential strategies settling them are proposed, which is aimed at navigating the future advancement of this fascinating domain.
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Affiliation(s)
- Jiandong Yao
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou, 510275, Guangdong, People's Republic of China
| | - Guowei Yang
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou, 510275, Guangdong, People's Republic of China
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