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Nasiruddin M, Waizumi H, Takaoka T, Wang Z, Sainoo Y, Mamun MSA, Ando A, Fukuyama M, Hibara A, Komeda T. A microfluidic approach for the detection of uric acid through electrical measurement using an atomically thin MoS 2 field-effect transistor. Analyst 2023; 148:4091-4098. [PMID: 37486297 DOI: 10.1039/d3an00772c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 07/25/2023]
Abstract
There is a demand for biosensors working under in vivo conditions, which requires significant device size and endurance miniaturization in solution environments. We demonstrated the detection of uric acid (UA) molecules, a marker of diseases like gout, whose continuous monitoring is required in medical diagnosis. We used a field effect transistor (FET) composed of an atomically thin transition metal dichalcogenide (TMD) channel. The sensor detection was carried out in a solution environment, for which we protected the electrodes of the source and drain from the solution. A microfluidic channel controls the solution flow that can realize evaporation-free conditions and provide an accurate concentration and precise measurement. We detected a systematic change of the drain current with the concentration of the UA in isopropyl alcohol (IPA) solvent with a detection limit of 60 nM. The sensor behavior is reversible, and the drain current returns to its original value when the channel is washed with pure solvent. The results demonstrate the feasibility of applying the MoS2-FET device to UA detection in solution, suggesting its possible use in the solution environment.
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Affiliation(s)
- Md Nasiruddin
- Department of Chemistry, Graduate School of Science, Tohoku University, Aramaki-Aza-Aoba, Aoba-Ku, Sendai 9808578, Japan
| | - Hiroki Waizumi
- Department of Chemistry, Graduate School of Science, Tohoku University, Aramaki-Aza-Aoba, Aoba-Ku, Sendai 9808578, Japan
| | - Tsuyoshi Takaoka
- Institute of Multidisciplinary Research for Advanced Materials (IMRAM, Tagen), Tohoku University, 2-1-1, Katahira, Aoba-Ku, Sendai 9800877, Japan.
| | - Zhipeng Wang
- Department of Chemistry, Graduate School of Science, Tohoku University, Aramaki-Aza-Aoba, Aoba-Ku, Sendai 9808578, Japan
| | - Yasuyuki Sainoo
- Institute of Multidisciplinary Research for Advanced Materials (IMRAM, Tagen), Tohoku University, 2-1-1, Katahira, Aoba-Ku, Sendai 9800877, Japan.
| | | | - Atsushi Ando
- National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
| | - Mao Fukuyama
- Institute of Multidisciplinary Research for Advanced Materials (IMRAM, Tagen), Tohoku University, 2-1-1, Katahira, Aoba-Ku, Sendai 9800877, Japan.
| | - Akihide Hibara
- Institute of Multidisciplinary Research for Advanced Materials (IMRAM, Tagen), Tohoku University, 2-1-1, Katahira, Aoba-Ku, Sendai 9800877, Japan.
| | - Tadahiro Komeda
- Institute of Multidisciplinary Research for Advanced Materials (IMRAM, Tagen), Tohoku University, 2-1-1, Katahira, Aoba-Ku, Sendai 9800877, Japan.
- Center for Spintronics Research Network, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
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Mamun MSA, Sainoo Y, Takaoka T, Waizumi H, Wang Z, Alam MI, Ando A, Arafune R, Komeda T. Chemistry of the photoisomerization and thermal reset of nitro-spiropyran and merocyanine molecules on the channel of the MoS 2 field effect transistor. Phys Chem Chem Phys 2021; 23:27273-27281. [PMID: 34850795 DOI: 10.1039/d1cp04283a] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/12/2022]
Abstract
We have explored the chemical reaction of the photoisomerization and thermal reaction of the photochromic spiropyran (SP) 1',3'-Dihydro-1',3',3' trimethyl-6-nitrospiro[2H-1 benzopyran-2,2'-(2H)-indole] molecule deposited on the atomic thin channel of a MoS2 field-effect transistor (FET) through the analysis of the FET property. With four monolayers of SP molecules on the channel, we observed a clear shift of the threshold voltage in the drain-current vs gate-voltage plot with UV-light injection on the molecule, which was due to the change of the SP molecule to merocyanine (MC). A complete reset from MC to SP molecule was achieved by thermal annealing, while the injection of green light could revert the FET property to the original condition. In the process of change from MC to SP, two types of decay rates were confirmed. The quick- and slow-decay components corresponded to the molecules attached directly to the substrate and those in the upper layer, respectively. The activation energies for the conversion of MC to SP molecules were estimated as 71 kJ/mol and 90 kJ/mol for the former and latter, respectively. Combined with DFT calculations, we concluded that the Id-Vg shift with photoisomerization from SP to MC is due to the upper layer molecules and the dipole moment in the surface normal direction. Based on the estimated activation energy of 90 kJ/mol for the reset process, we calculated the conversion rate in a controllable temperature range. From these values, we consider that the chemical state of MC can be maintained and switched in a designated time period, which demonstrates the possibility of this system in logical operation applications.
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Affiliation(s)
- Muhammad Shamim Al Mamun
- Department of Chemistry, Graduate School of Science, Tohoku University, Aramaki-Aza-Aoba, Aoba-Ku, Sendai 9808578, Japan.
| | - Yasuyuki Sainoo
- Institute of Multidisciplinary Research for Advanced Materials (IMRAM, Tagen), Tohoku University, 2-1-1, Katahira, Aoba-Ku, Sendai 9800877, Japan
| | - Tsuyoshi Takaoka
- Institute of Multidisciplinary Research for Advanced Materials (IMRAM, Tagen), Tohoku University, 2-1-1, Katahira, Aoba-Ku, Sendai 9800877, Japan
| | - Hiroki Waizumi
- Department of Chemistry, Graduate School of Science, Tohoku University, Aramaki-Aza-Aoba, Aoba-Ku, Sendai 9808578, Japan.
| | - Zhipeng Wang
- Department of Chemistry, Graduate School of Science, Tohoku University, Aramaki-Aza-Aoba, Aoba-Ku, Sendai 9808578, Japan.
| | - Md Iftekharul Alam
- Department of Chemistry, Graduate School of Science, Tohoku University, Aramaki-Aza-Aoba, Aoba-Ku, Sendai 9808578, Japan.
| | - Atsushi Ando
- National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
| | - Ryuichi Arafune
- International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS), Tsukuba, Ibaraki 304-0044, Japan
| | - Tadahiro Komeda
- Institute of Multidisciplinary Research for Advanced Materials (IMRAM, Tagen), Tohoku University, 2-1-1, Katahira, Aoba-Ku, Sendai 9800877, Japan
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Alam MI, Takaoka T, Waizumi H, Tanaka Y, Al Mamun MS, Ando A, Komeda T. Sensor behavior of MoS 2 field-effect transistor with light injection toward chemical recognition. RSC Adv 2021; 11:26509-26515. [PMID: 35479991 PMCID: PMC9037302 DOI: 10.1039/d1ra03698j] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/11/2021] [Accepted: 07/19/2021] [Indexed: 01/27/2023] Open
Abstract
The application of field-effect transistor (FET) devices with atomically thin channels as sensors has attracted significant attention, where the adsorption of atoms/molecules on the channels can be detected by the change in the properties of FET. Thus, to further enhance the chemical sensitivity of FETs, we developed a method to distinguish the chemical properties of adsorbates from the electric behavior of FET devices. Herein, we explored the variation in the FET properties of an MoS2-FET upon visible light injection and the effect of molecule adsorption for chemical recognition. By injecting light, the drain current (Id) increased from the light-off state, which is defined as (ΔId)ph. We examined this effect using CuPc molecules deposited on the channel. The (ΔId)phvs. wavelength continuous spectrum in the visible region showed a peak at the energy for the excitation from the highest occupied orbital (HOMO) to the molecule-induced state (MIS). The energy position and the intensity of this feature showed a sensitive variation with the adsorption of the CuPc molecule and are in good agreement with previously reported photo-absorption spectroscopy data, indicating that this technique can be employed for chemical recognition. The application of field-effect transistor (FET) devices with atomically thin channels as sensors has attracted significant attention. We further explore the method to attach the chemical recognition capability by combining with light injection.![]()
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Affiliation(s)
- Md Iftekharul Alam
- Department of Chemistry
- Graduate School of Science
- Tohoku University
- Sendai 980-8578
- Japan
| | - Tsuyoshi Takaoka
- Institute of Multidisciplinary Research for Advanced Materials (IMRAM, Tagen)
- Tohoku University
- Sendai 980-0877
- Japan
| | - Hiroki Waizumi
- Department of Chemistry
- Graduate School of Science
- Tohoku University
- Sendai 980-8578
- Japan
| | - Yudai Tanaka
- Department of Chemistry
- Graduate School of Science
- Tohoku University
- Sendai 980-8578
- Japan
| | | | - Atsushi Ando
- Device Technology Research Institute
- National Institute of Advanced Industrial Science and Technology (AIST)
- Tsukuba
- Japan
| | - Tadahiro Komeda
- Institute of Multidisciplinary Research for Advanced Materials (IMRAM, Tagen)
- Tohoku University
- Sendai 980-0877
- Japan
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