Impact of quantum size effects to the band gap of catalytic materials: a computational perspective

The evolution of nanotechnology has facilitated the development of catalytic materials with controllable composition and size, reaching the sub-nanometer limit. Nowadays, a viable strategy for tailoring and optimizing the catalytic activity involves controlling the size of the catalyst. This strategy is underpinned by the fact that the properties and reactivity of objects with dimensions on the order of nanometers can differ from those of the corresponding bulk material, due to the emergence of quantum size effects. Quantum size effects have a deep influence on the band gap of semiconducting catalytic materials. Computational studies are valuable for predicting and estimating the impact of quantum size effects. This perspective emphasizes the crucial role of modeling quantum size effects when simulating nanostructured catalytic materials. It provides a comprehensive overview of the fundamental principles governing the physics of quantum confinement in various experimentally observable nanostructures. Furthermore, this work may serve as a tutorial for modeling the electronic gap of simple nanostructures, highlighting that when working at the nanoscale, the finite dimensions of the material lead to an increase of the band gap because of the emergence of quantum confinement. This aspect is sometimes overlooked in computational chemistry studies focused on surfaces and nanostructures.

Surface termination and strain-induced modulation of the structure and electronic properties in 2D perovskites (Cs2BCl4 & CsB2Cl5, B = Pb, Sn): a first-principles study

Two-dimensional (2D) halide perovskites have demonstrated impressive long-term stability and superior device performance as compared to their three-dimensional (3D) counterparts. The potential of 2D halide perovskites for advanced photovoltaic applications can be enhanced by an understanding of how external factors like strain could be used to tune their optoelectronic properties. This study explores the effects of biaxial strain on the structure and electronic transport properties of 2D halide perovskites, focusing on the lowest energy (001) surfaces of (Cs2BCl4 and CsB2Cl5, B = Pb or Sn) with CsCl and BCl2 terminations. Using first-principles calculations, we find that the lower energy CsCl terminated surface, resulting in Cs2BCl4, couples strongly with biaxial strain. This termination shows bandgap modulations from approximately 1.5 eV to 1.8 eV for Cs2PbCl4 and 1.2 eV to 1.5 eV for Cs2SnCl4 with biaxial strain. Within the acoustic deformation potential theory, we compute hole mobilities, and find substantial enhancements of approximately 80% for Pb-based and 50% for Sn-based systems, thereby emphasizing the potential of strain engineering to further optimize charge transport properties in 2D halide perovskites.

Effect of surface termination on electronic and optical properties of lead-free tin-based eco-friendly perovskite solar cell: a first principal study

The lead (Pb)-based halide perovskites have been reported to be promising materials for photovoltaic applications; however, the presence of toxic lead in them concerns the environmental and health issues. In this work, we have, therefore, studied the lead-free and non-toxic tin-based halide perovskite, CsSnI3, which is an eco-friendly material with high power conversion efficiency, thus, being a potential candidate for photovoltaic applications. We have investigated the influence of CsI and SnI2-terminated (001) surfaces on structural, electronic and optical properties of lead-free tin-based halide perovskite CsSnI3 from the first principal calculations, based on density functional theory (DFT). The calculations of electronic and optical parameters are performed under the parameterisation of PBE_Sol for exchange-correlation functions conjugated with modified- Beche-Johnshon (mBJ) exchange potential. The optimised lattice constant, the energy band structure and the density of states (DOS) have been calculated for the bulk and different terminated surface structures. The optical properties of CsSnI3 are computed in terms of the real and imaginary part of absorption coefficient, dielectric function, refractive index, conductivity, reflectivity, extinction coefficient and electron energy loss. The photovoltaic characteristics for the CsI-termination are found to be better than the bulk and SnI2-terminated surfaces. This study reveals that optical and electronic properties can be tuned by selecting proper surface termination in halide perovskite CsSnI3. The CsSnI3 surfaces exhibit semiconductor behaviour with a direct energy band gap and a high value of absorption power in the ultraviolet and visible region, rendering these inorganic halide perovskite materials important for the eco-friendly and efficient optoelectronic devices.

Multigram-Scale Synthesis of Luminescent Cesium Lead Halide Perovskite Nanobricks for Plastic Scintillators

Cesium lead halide perovskite nanocrystals of general formula CsPbX₃ are having tremendous impact on a vast array of technologies requiring strong and tunable luminescence across the visible range and solutions processing. The development of plastic scintillators is just one of the many relevant applications. The syntheses are relatively simple but generally unsuitable to produce a large amount of material of reproducible quality required when moving from proof-of-concept scale to industrial applications. Wastes, particularly large amounts of lead-contaminated toxic and flammable organic solvents, are also an open issue. We describe a simple and reproducible procedure enabling the synthesis of luminescent CsPbX₃ nanobricks of constant quality on a scale going from 0.12 to 8 g in a single batch. We also show complete recycling of the reaction wastes, leading to dramatically improved efficiency and sustainability.

Picoperovskites: The Smallest Conceivable Isolated Halide Perovskite Structures Formed within Carbon Nanotubes

Halide perovskite structures are revolutionizing the design of optoelectronic materials, including solar cells, light-emitting diodes, and photovoltaics when formed at the quantum scale. Four isolated sub-nanometer, or picoscale, halide perovskite structures formed inside ≈1.2-1.6 nm single-walled carbon nanotubes (SWCNTs) by melt insertion from CsPbBr₃ and lead-free CsSnI₃ are reported. Three directly relate to the ABX₃ perovskite archetype while a fourth is a perovskite-like lamellar structure with alternating Cs₄ and polyhedral Sn₄ I_x layers. In ≈1.4 nm-diameter SWCNTs, CsPbBr₃ forms Cs₃ Pb^II Br₅ nanowires, one ABX₃ unit cell in cross section with the Pb²⁺ oxidation state maintained by ordered Cs⁺ vacancies. Within ≈1.2 nm-diameter SWCNTs, CsPbBr₃ and CsSnI₃ form inorganic-polymer-like bilayer structures, one-fourth of an ABX₃ unit cell in cross section with systematically reproduced ABX₃ stoichiometry. Producing these smallest halide perovskite structures at their absolute synthetic cross-sectional limit enables quantum confinement effects with first-principles calculations demonstrating bandgap widening compared to corresponding bulk structural forms.

Quantum confinement in chalcogenides 2D nanostructures from first principles

We investigated the impact of quantum confinement on the band gap of chalcogenides 2D nanostructures by means of density functional theory. We studied six different systems: MoS₂, WS₂, SnS₂, GaS, InSe, and HfS₂and we simulated nanosheets of increasing thickness, ranging from ultrathin films to ∼10-13 nm thick slabs, a size where the properties converge to the bulk. In some cases, the convergence of the band gap with slab thickness is rather slow, and sizeable deviations from the bulk value are still present with few nm-thick sheets. The results of the simulations were compared with the available experimental data, finding a quantitative agreement. The impact of quantum confinement can be rationalized in terms of effective masses of electrons and holes and system's size. These results show the possibility of reliably describing quantum confinement effects on systems for which experimental data are not available.

2D MXene: A Potential Candidate for Photovoltaic Cells? A Critical Review

The 2D transition metal carbides/nitrides (2D MXenes) are a versatile class of 2D materials for photovoltaic (PV) systems. The numerous advantages of MXenes, including their excellent metallic conductivity, high optical transmittance, solution processability, tunable work-function, and hydrophilicity, make them suitable for deployment in PV technology. This comprehensive review focuses on the synthesis methodologies and properties of MXenes and MXene-based materials for PV systems. Titanium carbide MXene (Ti3 C2 Tx ), a well-known member of the MXene family, has been studied in many PV applications. Herein, the effectiveness of Ti3 C2 Tx as an additive in different types of PV cells, and the synergetic impact of Ti3 C2 Tx as an interfacial material on the photovoltaic performance of PV cells, are systematically examined. Subsequently, the utilization of Ti3 C2 Tx as a transparent conductive electrode, and its influence on the stability of the PV cells, are discussed. This review also considers problems that emerged from previous studies, and provides guidelines for the further exploration of Ti3 C2 Tx and other members of the 2D MXene family in PV technology. This timely study is expected to provide comprehensive understanding of the current status of MXenes, and to set the direction for the future development in 2D material design and processing for PVs.

Rational Design of Semiconductor Heterojunctions for Photocatalysis

Electronic structure calculations provide a useful complement to experimental characterization tools in the atomic-scale design of semiconductor heterojunctions for photocatalysis. The band alignment of the heterojunction is of fundamental importance to achieve an efficient charge carrier separation, so as to reduce electron/hole recombination and improve photoactivity. The accurate prediction of the offsets of valence and conduction bands in the constituent units is thus of key importance but poses several methodological and practical problems. In this Minireview we address some of these problems by considering selected examples of binary and ternary semiconductor heterojunctions and how these are determined at the level of density functional theory (DFT). The atomically precise description of the interface, the consequent charge polarization, the role of quantum confinement, the possibility to use facet engineering to determine a specific band alignment, are among the effects discussed, with particular attention to pros and cons of each one of these aspects. This analysis shows the increasingly important role of accurate electronic structure calculations to drive the design and the preparation of new interfaces with desired properties.

Z-Scheme versus type-II junction in g-C3N4/TiO2 and g-C3N4/SrTiO3/TiO2 heterostructures

Band alignment and interface polarization of g-C₃N₄/TiO₂ and g-C₃N₄/SrTiO₃/TiO₂ interfaces.