Interfacial charge dynamics in type-II heterostructured sulfur doped-graphitic carbon nitride/bismuth tungstate as competent photoelectrocatalytic water splitting photoanode

Sluggish charge transfers at the electrode/electrolyte interface and fast recombination of electron-hole pairs limit the photoelectrocatalytic water-splitting ability of the bismuth tungstate (Bi₂WO₆). To address these issues, sulfur doped-graphitic carbon nitride/bismuth tungstate (S-g-C₃N₄/Bi₂WO₆) heterostructured hybrid material with different wt% of S-g-C₃N₄ were constructed via an ultrasonic approach. The formation of heterostructure offers well-separated electron-hole pairs, thereby improving the charge transfer process, and boosting water oxidation kinetics on the surface of modified electrodes. Electrochemical impedance analysis confirms the rapid charge transfer process and quick electrochemical reaction at the electrode/electrolyte interface, which quenches the charge recombination process. The S-g-C₃N₄/Bi₂WO₆ with 3 wt% of S-g-C₃N₄ photoanode delivers ~43, ~18 and ~2-folds higher applied bias photon-to-current efficiency than S-g-C₃N₄, Bi₂WO₆, and g-C₃N₄/Bi₂WO₆ (3 wt% of g-C₃N₄) photoanodes, respectively. From the combination of UV-Vis, XPS valance band, and Mott-Schottky analysis the plausible band edge positions of the Bi₂WO₆ and S-g-C₃N₄ were calculated. Based on the band structure, we have concluded that the S-g-C₃N₄/Bi₂WO₆ hybrid photoanode follows a type-II charge transfer mechanism to promote the photoelectrocatalytic water splitting ability.