Wide band gap thiophosphates ASrPS4 (A = Li, Na, K, Rb, Cs): cation size effect induced successive structural transformation

Metal thiophosphates have aroused much research interest due to their structural chemistry and possible applications as infrared functional materials. In this study, five quaternary Sr-based alkali metal thiophosphates ASrPS₄ (A = Li, Na, K, Rb, Cs) were obtained. Their structural comparison shows that their symmetry undergoes transformation from tetragonal (I4₁/acd) to monoclinic (P2₁/c) to orthorhombic (Pnma) system, which is induced by the cation size effects and coordination features of different alkali metal cations. The experimental and theoretical results demonstrate that the band gaps of all title compounds are large, namely 3.6-3.9 eV (experimental results) and 3.78-4.12 eV (HSE06). Theoretical analyses indicate that the [PS₄] group could be regarded as a good unit for designing wide band gap compounds, and the birefringence of NaSrPS₄ is 0.08 at the fundemental 1064 nm wavelength, which shows that it may be a potential infrared birefringent material.

Cubic Crystal Structure Formation and Optical Properties within the Ag-BII-MIV-X (BII = Sr, Pb; MIV = Si, Ge, Sn; X = S, Se) Family of Semiconductors

Quaternary chalcogenide semiconductors are promising materials for energy conversion and nonlinear optical applications, with properties tunable primarily by varying the elemental composition and crystal structure. Here, we first analyze the connections among several cubic crystal structure types, as well as the orthorhombic Ag₂PbGeS₄-type structure, reported for select members within the Ag-B^II-M^IV-X (B^II = Sr, Pb; M^IV = Si, Ge, Sn; X = S, Se) compositional space. Focusing on the Ag-Pb-Si-S and Ag-Sr-Sn-S systems, we show that one structure type, with the formulas Ag₂Pb₃Si₂S₈ and Ag₂Sr₃Sn₂S₈, is favored. We have prepared powder and single-crystal samples of Ag₂Pb₃Si₂S₈ and Ag₂Sr₃Sn₂S₈, showing that each takes on the noncentrosymmetric cubic space group I4̅3d and is isostructural to the previously reported compound Ag₂Sr₃Ge₂Se₈. Through hybrid density functional theory calculations, these cubic compounds are demonstrated to be (quasi-)direct band gap semiconductors with high densities of states at the band maxima. The band-gap energies are measured by reflectance spectroscopy as 1.95(3) and 2.66(4) eV for Ag₂Pb₃Si₂S₈ and Ag₂Sr₃Sn₂S₈, respectively. We further measure the optical properties and show the electronic band structures of three other isostructural A^I-B^II-M^IV-X-type materials, i.e., Ag₂Sr₃Si₂S₈, Ag₂Sr₃Ge₂S₈, and Ag₂Sr₃Ge₂Se₈, showing that the band gaps can be predictably tuned by element substitution. Detailed visual analyses of the different structures and of their relationships with other members of the Ag-B^II-M^IV-X compositional family provide a basis for a broader understanding of the structure formation and optoelectronic properties within the quaternary chalcogenide semiconductor family.

Ba6(CuxZy)Sn4S16 (Z = Mg, Mn, Zn, Cd, In, Bi, Sn): High Chemical Flexibility Resulting in Good Nonlinear-Optical Properties

Seven acentric sulfides Ba₆(Cu_xZ_y)Sn₄S₁₆ (Z = Mg, Mn, Zn, Cd, In, Bi, Sn) were grown by a high-temperature salt flux method. The crystal structures of the Ba₆(Cu_xZ_y)Sn₄S₁₆ (Z = Mg, Mn, Zn, Cd, In, Bi, Sn) compounds were determined by single-crystal X-ray diffraction with the aid of solid-state NMR spectroscopy. The Ba₆(Cu_xZ_y)Sn₄S₁₆ (Z = Mg, Mn, Zn, Cd, In, Bi) compounds are isostructural and crystallize in the Ba₆Ag₄Sn₄S₁₆ structure type. The Sn-containing compound exhibits high structural similarity to Ba₆(Cu_xZ_y)Sn₄S₁₆ (Z = Mg, Mn, Zn, Cd, In, Bi) with the presence of an interstitial atomic position partially occupied by Sn atoms. The chemical bonding characteristics of Ba₆(Cu_2.9Sn_0.4)Sn₄S₁₆ were understood with electron localization function calculations coupled with crystal orbital Hamilton population calculations. The Ba-S and Cu-S interactions are dominantly ionic, but the Sn-S interactions consist of strong covalent bonding characteristics in Ba₆(Cu_2.9Sn_0.4)Sn₄S₁₆. The monovalent Cu atoms, mixed with certain metals with various oxidation states, significantly shift the optical properties of the Ba₆(Cu_xZ_y)Sn₄S₁₆ (Z = Mg, Mn, Zn, Cd, In, Bi) compounds. This results in a good balance between the second-harmonic-generation (SHG) response and laser damage threshold (LDT). Ba₆(Cu_1.9Zn_1.1)Sn₄S₁₆ possesses a high SHG response and a high LDT of 2.8 × AGS and 3 × AGS, respectively. A density functional theory calculation revealed that CuS₄ and SnS₄ tetrahedra significantly contribute to the SHG response in Ba₆(Cu₂Mg)Sn₄S₁₆, which also confirmed that CuS₄ tetrahedra are crucial for the stability and optical properties of the Ba₆(Cu_xZ_y)Sn₄S₁₆ (Z = Mg, Mn, Zn, Cd, In, Bi, Sn) compounds revealed by electronic structure analysis.

AAg3Ga8Se14 (A = Rb, Cs): Second-Harmonic Generation Responses Realized through the Parallel Arrangement of AgSe4 and GaSe4 Tetrahedrons

Two new quaternary selenides AAg3Ga8Se14, (A = Rb, 1; Cs, 2) were synthesised via sold-state reaction in sealed silica tubes. Compounds 1 and 2 crystallised in the monoclinic space group...

Second-Harmonic-Generation-Active Oxyhalides: CuSb2O3X (X = Cl, Br)

Metal oxyhalides have attracted broad interest recently because of their diverse structures and versatile properties. Here, two oxyhalides, CuSb₂O₃Cl (1) and CuSb₂O₃Br (2), were studied by focusing on their nonlinear-optical properties. They are crystallized in the noncentrosymmetric monoclinic Cc structure, and the layered structures could be derived from a 1:1 combination of CuX- (X = Cl, Br) and Sb₂O₃-type slabs. Their energy gaps were determined to be 2.76 and 2.64 eV. The second-harmonic-generation (SHG) test suggests that they are nonlinear-optical-active, and the effects are ascribed to the contribution of CuX₃O units. Meanwhile, the SbO₃ units' arrangement has a small contribution to the SHG effects. This work is the pioneer SHG investigation of the M^I-M^III-O-X (M^I = Cu, Ag; M^III = trivalent As, Sb, Bi; X = halogen) family.

Structural, Optical, and Electronic Properties of Two Quaternary Chalcogenide Semiconductors: Ag2SrSiS4 and Ag2SrGeS4

Quaternary chalcogenide materials have long been a source of semiconductors for optoelectronic applications. Recent studies on I₂-II-IV-X₄ (I = Ag, Cu, Li; II = Ba, Sr, Eu, Pb; IV = Si, Ge, Sn; X = S, Se) materials have shown particular versatility and promise among these compounds. These semiconductors take advantage of a diverse bonding scheme and chemical differences among cations to target a degree of antisite defect resistance. Within this set of compounds, the materials containing both Ag and Sr have not been experimentally studied and leave a gap in the full understanding of the family. Here, we have synthesized powders and single crystals of two Ag- and Sr-containing compounds, Ag₂SrSiS₄ and Ag₂SrGeS₄, each found to form in the tetragonal I4̅2m structure of Ag₂BaGeS₄. During the synthesis targeting the title compounds, two additional materials, Ag₂Sr₃Si₂S₈ and Ag₂Sr₃Ge₂S₈, have also been identified. These cubic compounds represent impurity phases during the synthesis of Ag₂SrSiS₄ and Ag₂SrGeS₄. We show through hybrid density functional theory calculations that Ag₂SrSiS₄ and Ag₂SrGeS₄ have highly dispersive band-edge states and indirect band gaps, experimentally measured as 2.08(1) and 1.73(2) eV, respectively. Second-harmonic generation measurements on Ag₂SrSiS₄ and Ag₂SrGeS₄ powders show frequency-doubling capabilities in the near-infrared range.

Non-centrosymmetric sulfides A2Ba6MnSn4S16 (A = Li, Ag): syntheses, structures and properties

Li₂Ba₆MnSn₄S₁₆ and Ag₂Ba₆MnSn₄S₁₆ are synthesized for the first time. By modulating disordered sites with Mn²⁺, they not only show strong SHG responses and wide band gaps (5.1, 2.7 × AgGaS₂; 2.88, 2.76 eV), but also possess paramagnetism.