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Sutorius A, Weißing R, Rindtorff Pèrez C, Fischer T, Hartl F, Basu N, Shin HS, Mathur S. Understanding vapor phase growth of hexagonal boron nitride. NANOSCALE 2024; 16:15782-15792. [PMID: 39118450 DOI: 10.1039/d4nr02624a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/10/2024]
Abstract
Hexagonal boron nitride (hBN), with its atomically flat structure, excellent chemical stability, and large band gap energy (∼6 eV), serves as an exemplary 2D insulator in electronics. Additionally, it offers exceptional attributes for the growth and encapsulation of semiconductor transition metal dichalcogenides (TMDCs). Current methodologies for producing hBN thin films primarily involve exfoliating multi-layer or bulk crystals and thin film growth via chemical vapor deposition (CVD), which entails the thermal decomposition and surface reaction of molecular precursors like ammonia boranes (NH3BH3) and borazine (B3N3H6). These molecular precursors contain pre-existing B-N bonds, thus promoting the nucleation of BN. However, the quality and phase purity of resulting BN films are greatly influenced by the film preparation and deposition process conditions that remain a substantial concern. This study aims to comprehensively investigate the impact of varied CVD systems, parameters, and precursor chemistry on the synthesis of high-quality, large scale hBN on both catalytic and non-catalytic substrates. The comparative analysis provided new insights into most effective approaches concerning both quality and scalability of vapor phase grown hBN films.
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Affiliation(s)
- Anja Sutorius
- Institute of Inorganic and Materials Chemistry, Department of Chemistry, University of Cologne, Greinstraße 6, 50939 Cologne, Germany.
| | - René Weißing
- Institute of Inorganic and Materials Chemistry, Department of Chemistry, University of Cologne, Greinstraße 6, 50939 Cologne, Germany.
| | - Carina Rindtorff Pèrez
- Institute of Inorganic and Materials Chemistry, Department of Chemistry, University of Cologne, Greinstraße 6, 50939 Cologne, Germany.
| | - Thomas Fischer
- Institute of Inorganic and Materials Chemistry, Department of Chemistry, University of Cologne, Greinstraße 6, 50939 Cologne, Germany.
| | - Fabian Hartl
- Institute of Inorganic and Materials Chemistry, Department of Chemistry, University of Cologne, Greinstraße 6, 50939 Cologne, Germany.
| | - Nilanjan Basu
- Center for 2D Quantum Heterostructures, Institute for Basic Science (IBS), Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Hyeon Suk Shin
- Center for 2D Quantum Heterostructures, Institute for Basic Science (IBS), Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
- Department of Energy Science, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Sanjay Mathur
- Institute of Inorganic and Materials Chemistry, Department of Chemistry, University of Cologne, Greinstraße 6, 50939 Cologne, Germany.
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Amadi CK, Karimpour T, Jafari M, Peng Z, Van Gerven D, Brune V, Hartl F, Siaj M, Mathur S. Synthesis and theoretical study of a mixed-ligand indium(III) complex for fabrication of β-In 2S 3 thin films via chemical vapor deposition. Dalton Trans 2024; 53:9874-9886. [PMID: 38805202 DOI: 10.1039/d4dt00394b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 05/29/2024]
Abstract
Two new heteroleptic indium aminothiolate compounds [InClSC2H4N(Me)SC2H4]3[1] and [InSC2H4N(Me)SC2H4(C8H5F3NO)] [2] were synthesized by in situ salt metathesis reaction involving indium trichloride, aminothiol, and N,O-β-heteroarylalkenol ligands. The complexes were subsequently purified and thoroughly characterized by nuclear magnetic resonance (NMR) analysis, elemental studies, mass spectroscopy, and X-ray diffraction single crystal analysis that showed a trigonal bipyramidal coordination of In(III) in both complexes. Thermogravimetric analysis of [1] revealed a multistep decomposition pathway and the formation of In2S3 at 350 °C, which differed from the pattern of [2] due to the lower thermal stability of [1]. Compound [2] exhibited a three-step decomposition process, resulting in the formation of In2S3 at 300 °C. The Chemical Vapor Deposition (CVD) experiment involving compound [2] was conducted on the FTO substrate, resulting in the production of singular-phase In2S3 deposits. A comprehensive characterization of these deposits, including crystal structure analysis via X-ray diffraction (XRD), and surface topography examination through scanning electron microscopy (SEM) has been completed. The presence of In-S units was also supported by the Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), and energy dispersive spectroscopy (EDS) of the as-deposited films. Moreover, the electronic structure and thermal properties of compound [2] were investigated through DFT calculations. Electron density localization analysis revealed that the highest occupied molecular orbital (HOMO) exhibited dense concentration at the aminothiolate moiety of the complex, while the lowest unoccupied molecular orbital (LUMO) predominantly resided at the N,O-β-heteroarylalkenolate ligand. Furthermore, our computational investigation has validated the formation of indium sulfide by elucidating an intermediate state, effectively identified through EI-MS analysis, as one of the plausible pathways for obtaining In2S3. This intermediate state comprises the aminothiolate ligand (LNS) coordinated with indium metal.
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Affiliation(s)
- Chijioke Kingsley Amadi
- University of Cologne, Department of Chemistry, Institute of Inorganic Chemistry, Greinstr. 6, 50939 Cologne, Germany.
| | - Touraj Karimpour
- University of Cologne, Department of Chemistry, Institute of Inorganic Chemistry, Greinstr. 6, 50939 Cologne, Germany.
| | - Maziar Jafari
- Université du Québec à Montréal, Department of Chemistry and Biochemistry, Montréal, QC H3C 3P8, Canada
| | - Zhiyuan Peng
- Université du Québec à Montréal, Department of Chemistry and Biochemistry, Montréal, QC H3C 3P8, Canada
| | - David Van Gerven
- University of Cologne, Department of Chemistry, Institute of Inorganic Chemistry, Greinstr. 6, 50939 Cologne, Germany.
| | - Veronika Brune
- University of Cologne, Department of Chemistry, Institute of Inorganic Chemistry, Greinstr. 6, 50939 Cologne, Germany.
| | - Fabian Hartl
- University of Cologne, Department of Chemistry, Institute of Inorganic Chemistry, Greinstr. 6, 50939 Cologne, Germany.
| | - Mohamed Siaj
- Université du Québec à Montréal, Department of Chemistry and Biochemistry, Montréal, QC H3C 3P8, Canada
| | - Sanjay Mathur
- University of Cologne, Department of Chemistry, Institute of Inorganic Chemistry, Greinstr. 6, 50939 Cologne, Germany.
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Pellegrino AL, Lo Presti F, Smecca E, Valastro S, Greco G, Di Franco S, Roccaforte F, Alberti A, Malandrino G. A Low Temperature Growth of Cu 2O Thin Films as Hole Transporting Material for Perovskite Solar Cells. MATERIALS (BASEL, SWITZERLAND) 2022; 15:7790. [PMID: 36363379 PMCID: PMC9657906 DOI: 10.3390/ma15217790] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 10/06/2022] [Revised: 10/31/2022] [Accepted: 11/02/2022] [Indexed: 06/16/2023]
Abstract
Copper oxide thin films have been successfully synthesized through a metal-organic chemical vapor deposition (MOCVD) approach starting from the copper bis(2,2,6,6-tetramethyl-3,5-heptanedionate), Cu(tmhd)2, complex. Operative conditions of fabrication strongly affect both the composition and morphologies of the copper oxide thin films. The deposition temperature has been accurately monitored in order to stabilize and to produce, selectively and reproducibly, the two phases of cuprite Cu2O and/or tenorite CuO. The present approach has the advantages of being industrially appealing, reliable, and fast for the production of thin films over large areas with fine control of both composition and surface uniformity. Moreover, the methylammonium lead iodide (MAPI) active layer has been successfully deposited on the ITO/Cu2O substrate by the Low Vacuum Proximity Space Effusion (LV-PSE) technique. X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), and atomic force microscopy (AFM) analyses have been used to characterize the deposited films. The optical band gap (Eg), ranging from 1.99 to 2.41 eV, has been determined through UV-vis analysis, while the electrical measurements allowed to establish the p-type conductivity behavior of the deposited Cu2O thin films with resistivities from 31 to 83 Ω cm and carrier concentration in the order of 1.5-2.8 × 1016 cm-3. These results pave the way for potential applications of the present system as a hole transporting layer combined with a perovskite active layer in emergent solar cell technologies.
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Affiliation(s)
- Anna L. Pellegrino
- Dipartimento di Scienze Chimiche, Università degli Studi di Catania, INSTM UdR Catania, Viale Andrea Doria 6, 95125 Catania, Italy
| | - Francesca Lo Presti
- Dipartimento di Scienze Chimiche, Università degli Studi di Catania, INSTM UdR Catania, Viale Andrea Doria 6, 95125 Catania, Italy
| | - Emanuele Smecca
- National Research Council-Institute for Microelectronics and Microsystems (CNR-IMM), Zona Industriale Strada VIII No. 5, 95121 Catania, Italy
| | - Salvatore Valastro
- National Research Council-Institute for Microelectronics and Microsystems (CNR-IMM), Zona Industriale Strada VIII No. 5, 95121 Catania, Italy
| | - Giuseppe Greco
- National Research Council-Institute for Microelectronics and Microsystems (CNR-IMM), Zona Industriale Strada VIII No. 5, 95121 Catania, Italy
| | - Salvatore Di Franco
- National Research Council-Institute for Microelectronics and Microsystems (CNR-IMM), Zona Industriale Strada VIII No. 5, 95121 Catania, Italy
| | - Fabrizio Roccaforte
- National Research Council-Institute for Microelectronics and Microsystems (CNR-IMM), Zona Industriale Strada VIII No. 5, 95121 Catania, Italy
| | - Alessandra Alberti
- National Research Council-Institute for Microelectronics and Microsystems (CNR-IMM), Zona Industriale Strada VIII No. 5, 95121 Catania, Italy
| | - Graziella Malandrino
- Dipartimento di Scienze Chimiche, Università degli Studi di Catania, INSTM UdR Catania, Viale Andrea Doria 6, 95125 Catania, Italy
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