Above room-temperature dielectric switching and semiconducting properties of a layered organic-inorganic hybrid compound: (C6H12N)2Pb(NO3)4

Evaluating Pb-based and Pb-free Halide Perovskites for Solar-Cell Applications: A Simulation Study

Metal halide Pb-based and Pb-free perovskite crystal structures are an essential class of optoelectronic materials due to their significant optoelectronic properties, optical absorption and tuneable emission spectrum properties. However, the most efficient optoelectronic devices were based on the Pb as a monovalent cation, but its toxicity is a significant hurdle for commercial device applications. Thus, replacing the toxic Pb with Pb-free alternatives (such as tin (Sn)) for diverse photovoltaic and optoelectronic applications is essential. Moreover, replacing the volatile methylammonium (MA) with cesium (Cs) leads to the development of an efficient perovskite absorber layer with improved optical & thermal stability and stabilized photoconversion efficiency. This paper discusses the correlation between the experimental and theoretical work for the Pb-based and Pb-free perovskites synthesised using the hot-injection method at different temperatures. Here, simulation is also carried out using the help of SCAPS-1D software to study the effect of various parameters of CsSnI3 and CsPbI3 layers on solar cell performance. This experimental and theoretical comparative study of the Hot-injection method synthesised CsPbI3 and CsSnI3 perovskites is rarely investigated for optoelectronic applications.

The halogen substitution strategy of inorganic skeletons triggers dielectric and band gap regulation of hybrid perovskites

Organic-inorganic hybrid perovskites (OIHPs) with dielectric switching functions have aroused comprehensive scientific interest, benefitting from their promising applications in sensors and information storage. However, to date, most of these materials discovered thus far possess a single function and are limited in their applicability, failing to meet the requirements of diverse applications. Moreover, the discovery of these materials has been largely serendipitous. Building multifunctional OIHPs with dielectric switching and semiconductors remains a daunting task. In this context, by introducing [C7H16N]+ as cations and in combination with lead halide with semiconducting properties, two OIHPs [C7H16N]PbI3 (1) and [C7H16N]PbBr3 (2) ([C7H16N]+ = (cyclopropylmethyl) trimethylammonium) have been successfully designed. They have dielectric switching properties close to 253 and 279 K and semiconducting behavior with band gaps of 2.67 and 3.22 eV. The phase transition temperature increased by 26 K through halogen substitution. In summary, our findings in this study provide insights into the application of the halogen substitution regulation strategy and open up new possibilities for designing perovskite semiconductors with dielectric switching functionality.

Zero-Dimensional Sn-Based Enantiomeric Phase-Transition Materials with High-Tc and Dielectric Switching

The combination of chirality and phase-transition materials has broad application prospects. Therefore, based on the quasi-spherical theory and the thought strategy of introducing chirality, we have successfully synthesized a pair of chiral enantiomeric ligands (R/S)-triethyl-(2-hydroxypropyl)ammonium iodide, which can be combined with a tin hexachloride anion to obtain a pair of new organic-inorganic hybrid enantiomeric high-temperature plastic phase-transition materials: (R/S)-[CH3 CH(OH)CH2 N(CH2 CH3 )3 ]2 SnCl6 (1-R/1-S), which have a high temperature phase transition of Tc =384 K, crystallize in the P21 chiral space group at room temperature, and have obvious CD signals. In addition, compounds 1-R and 1-S have a good low-loss dielectric switch and broadband gap. This work is conducive to the research into chiral high-temperature reversible plastic phase-transition materials, and promotes the development of multi-functional phase-transition materials.