Semiconducting properties of pyridyl appended linear dicarboxylate based coordination polymers: theoretical prediction via DFT study

Coordination polymers: a promising candidate for photo-responsive electronic device application

The design and synthesis of electrically conductive coordination polymers (CPs) are of special interest due to their applications in the fabrication of many environmentally benign emerging technologies, such as molecular wires, photovoltaic cells, light emitting diodes (LEDs), field effect transistors (FETs) and Schottky barrier diodes (SBDs). Owing to their structural flexibility, easy functionality and adjustable energy levels, CPs are promising candidates for providing a better pathway for superior charge transport. Again, the utilization of visible light as an external stimulus to control and manoeuvre the electrical properties of the CPs is exceptionally motivating for the development of many optoelectronic devices, such as photodetectors, photo-switches, photodiodes and chemiresistive sensors. The applications of such materials in devices will solve questions regarding the energy crisis and environmental concerns. This study provides an overview of the recent advances in the development of photo-responsive CPs and the possibility of their application in developing optoelectronic devices. In this regard, a thorough literature survey was performed and the studies related to the fabrication of photosensitive conducting CPs for applications in optoelectronic devices are listed.

Crystallographic Aspects, Photophysical Properties, and Theoretical Survey of Tetrachlorometallates of Group 12 Metals [Zn(II), Cd(II), and Hg(II)] with a Triply Protonated 2,4,6-Tris(2-pyridyl)-1,3,5-triazine Ligand

Zn(II) (complex 1), Cd(II) (complex 2), and Hg(II) (complex 3) complexes have been synthesized using a triply protonated tptz (H₃tptz³⁺) ligand and characterized mainly by single-crystal X-ray analysis. The general formula of all of the complexes is (H₃tptz)³⁺·Cl^-·[MCl₄]^2-·nH₂O (where n = 1, 1.5, and 1.5 for complexes 1, 2, and 3, respectively). The crystallographic analysis reveals that the anion···π, anion···π⁺, and several hydrogen bonding interactions play a fundamental role in the stabilization of the self-assembled architectures that in turn help to enhance the dimensionality of all of the complexes. In addition, Hirshfeld surfaces and fingerprint plots have been deployed here to visualize the similarities and differences in hydrogen bonding interactions in 1-3, which are very important in forming supramolecular architectures. A density functional theory (DFT) study has been used to analyze and rationalize the supramolecular interactions by using molecular electrostatic potential (MEP) surfaces and combined QTAIM/NCI plots. Then, the device parameters for the complexes (1-3) have been thoroughly investigated by fabricating a Schottky barrier diode (SBD) on an indium tin oxide (ITO) substrate. It has been observed that the device made from complex 2 is superior to those from complexes 1 and 3, which has been explained in terms of band gaps, differences in the electronegativities of the central metal atoms, and the better supramolecular interactions involved. Finally, theoretical calculations have also been performed to analyze the experimental differences in band gaps as well as electrical conductivities observed for all of the complexes. Henceforth, the present work combined supramolecular, photophysical, and theoretical studies regarding group 12 metals in a single frame.

The regulation of the withstand voltage performance of ZnO/GaN vertical heterostructures using external electric field and vacancy defects

The band gap of the heterostructure determines the withstand voltage. It is very important to regulate the band gap of heterojunctions and to investigate their electrical properties by applying external electric field. Based on density functional theory (DFT), ZnO/GaN vertical heterostructures with two stacking configurations (AB/BA and AB/AB, named H₁ and H₂, respectively) are constructed. The external electric field and vacancy defects of Zn, Ga, O and N atoms (V_Zn, V_Ga, V_O and V_N) are applied to analyze the electrical properties. The band gap can be tuned from 2.07 eV to 0 eV in H₁ and 1.53 eV-0 eV in H₂. As the electric field increases, H₁ has stronger withstand voltage (-0.84-0.56 V/Å) than H₂ (-0.26-0.26 V/Å). In addition, the structures deform obviously with the effect of vacancy defects, but remain stable. The presence of V_Ga and V_N enables H₁ and H₂ to exhibits metal conductivity and V_O change the band types of H₁ and H₂ from direct to indirect. The results of charge density difference (CDD) prove that a zero potential region and a weak electric field occur at the position of V_Zn and V_O, respectively. Likewise, the external electric field is applied to the defective heterostructures. The bandgap also exhibits strong tunability, and the heterostructure with V_O has the largest electric field modulation width. The above results indicate that ZnO/GaN exhibits excellent electrical properties with the influence of V_O, which represents potential applications in electronic devices.

Insight into charge transportation in cadmium based semiconducting organic-inorganic hybrid materials and their application in the fabrication of photosensitive Schottky devices

A coordination polymer (1) and a trinuclear complex (2) have been synthesized using a compartmental N₂O₂O₂' donor Schiff base ligand. Both complexes are characterized using different spectroscopic techniques and their structures are determined using single crystal X-ray diffraction analyses. Energies associated with different non-covalent (S⋯O chalcogen bonds, C-H⋯H-C, C-H⋯I and C-H⋯π) interactions in the solid state of both complexes have been calculated using the Turbomole program. Investigations of electrical conductivity and photosensitivity of both complexes reveal that suitable Schottky diode devices could be fabricated from both complexes. The current vs. voltage plots of the complex based devices have been used to calculate the conductivity under dark and irradiation conditions. In both complexes the charge transportation mainly occurs through space which involves the hopping process. Standard band theory has been used to compare the experimental and theoretical results of optoelectronic measurements. The calculations confirm that both are direct band gap (2.78 and 3.30 eV) semiconductors and that complex 1 exhibits a lower band gap, in line with the experimental results (3.21 and 3.43 eV in 1 and 2, respectively).

Stimuli-Responsive Zinc (II) Coordination Polymers: A Novel Platform for Supramolecular Chromic Smart Tools

The unique role of the zinc (II) cation prompted us to cut a cross-section of the large and complex topic of the stimuli-responsive coordination polymers (CPs). Due to its flexible coordination environment and geometries, easiness of coordination-decoordination equilibria, "optically innocent" ability to "clip" the ligands in emissive architectures, non-toxicity and sustainability, the zinc (II) cation is a good candidate for building supramolecular smart tools. The review summarizes the recent achievements of zinc-based CPs as stimuli-responsive materials able to provide a chromic response. An overview of the past five years has been organised, encompassing 1, 2 and 3D responsive zinc-based CPs; specifically zinc-based metallorganic frameworks and zinc-based nanosized polymeric probes. The most relevant examples were collected following a consequential and progressive approach, referring to the structure-responsiveness relationship, the sensing mechanisms, the analytes and/or parameters detected. Finally, applications of highly bioengineered Zn-CPs for advanced imaging technique have been discussed.