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Ji Y, Wang M, Yang Z, Wang H, Padhiar MA, Qiu H, Dang J, Miao Y, Zhou Y, Bhatti AS. Strong violet emission from ultra-stable strontium-doped CsPbCl 3 superlattices. NANOSCALE 2022; 14:2359-2366. [PMID: 35088791 DOI: 10.1039/d1nr07848h] [Citation(s) in RCA: 6] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Among the lead halide perovskites, the photoluminescence quantum yields (PLQYs) of perovskite quantum dots (PQDs) in the violet region are the very lowest. This is an obstacle to the optical applications across the entire visible area based on perovskite materials. Herein, we report a novel strontium (Sr)-substitution along with chlorine passivation strategy to enhance the PLQYs of CsPbCl3 PQDs. We surprisingly found that when the molar ratio of Sr2+/Pb2+ = 0.1/0.9, CsSr0.1Pb0.9Cl3 PQDs exhibit strong single-color violet emission, which is attributed to the effective passivation of chlorine defects. We further found spontaneous self-assembly of PQDs into highly emissive PSCs from the precursor in a highly concentrated solution. Moreover, by dilution of these PSCs, a few small PQD aggregates can be regained, which is similar to the PQDs formed at lower concentrations. Benefiting from the superior collective properties of individual PQDs, these highly fluorescent CsSr0.1Pb0.9Cl3 PSCs can maintain good stability even when directly immersed in water or exposed to illumination.
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Affiliation(s)
- Yongqiang Ji
- Electronic Materials Research Laboratory (EMRL), Key Laboratory of Education Ministry, International Center for Dielectric Research (ICDR), Shaanxi Engineering Research Center of Advanced Energy Materials and Devices, School of Electronic and Information Engineering, Xi'an Jiaotong University, 710049 Xi'an, China.
- State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing, 100871, China
| | - Minqiang Wang
- Electronic Materials Research Laboratory (EMRL), Key Laboratory of Education Ministry, International Center for Dielectric Research (ICDR), Shaanxi Engineering Research Center of Advanced Energy Materials and Devices, School of Electronic and Information Engineering, Xi'an Jiaotong University, 710049 Xi'an, China.
| | - Zhi Yang
- Electronic Materials Research Laboratory (EMRL), Key Laboratory of Education Ministry, International Center for Dielectric Research (ICDR), Shaanxi Engineering Research Center of Advanced Energy Materials and Devices, School of Electronic and Information Engineering, Xi'an Jiaotong University, 710049 Xi'an, China.
| | - Hao Wang
- Electronic Materials Research Laboratory (EMRL), Key Laboratory of Education Ministry, International Center for Dielectric Research (ICDR), Shaanxi Engineering Research Center of Advanced Energy Materials and Devices, School of Electronic and Information Engineering, Xi'an Jiaotong University, 710049 Xi'an, China.
| | - Muhammad Amin Padhiar
- Electronic Materials Research Laboratory (EMRL), Key Laboratory of Education Ministry, International Center for Dielectric Research (ICDR), Shaanxi Engineering Research Center of Advanced Energy Materials and Devices, School of Electronic and Information Engineering, Xi'an Jiaotong University, 710049 Xi'an, China.
| | - Hengwei Qiu
- Department of Chemistry, Key Laboratory of Bioorganic Phosphorus Chemistry & Chemical Biology, Tsinghua University, Beijing 100084, China
| | - Jialin Dang
- Electronic Materials Research Laboratory (EMRL), Key Laboratory of Education Ministry, International Center for Dielectric Research (ICDR), Shaanxi Engineering Research Center of Advanced Energy Materials and Devices, School of Electronic and Information Engineering, Xi'an Jiaotong University, 710049 Xi'an, China.
| | - Yinru Miao
- Electronic Materials Research Laboratory (EMRL), Key Laboratory of Education Ministry, International Center for Dielectric Research (ICDR), Shaanxi Engineering Research Center of Advanced Energy Materials and Devices, School of Electronic and Information Engineering, Xi'an Jiaotong University, 710049 Xi'an, China.
| | - Yun Zhou
- Electronic Materials Research Laboratory (EMRL), Key Laboratory of Education Ministry, International Center for Dielectric Research (ICDR), Shaanxi Engineering Research Center of Advanced Energy Materials and Devices, School of Electronic and Information Engineering, Xi'an Jiaotong University, 710049 Xi'an, China.
| | - Arshad Saleem Bhatti
- Centre for Micro and Nano Devices, Department of Physics, COMSATS Institute of Information Technology, Islamabad, 44500, Pakistan
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Ji Y, Wang M, Yang Z, Qiu H, Padhiar MA, Zhou Y, Wang H, Dang J, Gaponenko NV, Bhatti AS. Trioctylphosphine-Assisted Pre-protection Low-Temperature Solvothermal Synthesis of Highly Stable CsPbBr 3/TiO 2 Nanocomposites. J Phys Chem Lett 2021; 12:3786-3794. [PMID: 33847498 DOI: 10.1021/acs.jpclett.1c00693] [Citation(s) in RCA: 13] [Impact Index Per Article: 4.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Lead halide perovskite quantum dots (PQDs) are reported as a promising branch of perovskites, which have recently emerged as a field in luminescent materials research. However, before the practical applications of PQDs can be realized, the problem of poor stability has not yet been solved. Herein, we propose a trioctylphosphine (TOP)-assisted pre-protection low-temperature solvothermal synthesis of highly stable CsPbBr3/TiO2 nanocomposites. Due to the protection of branched ligands and the lower temperature of shell formation, these TOP-modified CsPbBr3 PQDs are successfully incorporated into a TiO2 monolith without a loss of fluorescence intensity. Because the excellent nature of both parent materials is preserved in CsPbBr3/TiO2 nanocomposites, it is found that the as-prepared CsPbBr3/TiO2 nanocomposites not only display excellent photocatalytic activity but also yield improved PL stability, enabling us to build highly stable white light-emitting diodes and to photodegrade rhodamine B.
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Affiliation(s)
- Yongqiang Ji
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education International Center for Dielectric Research and Shannxi Engineering Research Center of Advanced Energy Materials and Devices, Xi'an Jiaotong University, Xi'an 710049, China
| | - Minqiang Wang
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education International Center for Dielectric Research and Shannxi Engineering Research Center of Advanced Energy Materials and Devices, Xi'an Jiaotong University, Xi'an 710049, China
| | - Zhi Yang
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education International Center for Dielectric Research and Shannxi Engineering Research Center of Advanced Energy Materials and Devices, Xi'an Jiaotong University, Xi'an 710049, China
| | - Hengwei Qiu
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education International Center for Dielectric Research and Shannxi Engineering Research Center of Advanced Energy Materials and Devices, Xi'an Jiaotong University, Xi'an 710049, China
- Department of Chemistry, Key Laboratory of Bioorganic Phosphorus Chemistry & Chemical Biology, Tsinghua University, Beijing 100084, China
| | - Muhammad Amin Padhiar
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education International Center for Dielectric Research and Shannxi Engineering Research Center of Advanced Energy Materials and Devices, Xi'an Jiaotong University, Xi'an 710049, China
| | - Yun Zhou
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education International Center for Dielectric Research and Shannxi Engineering Research Center of Advanced Energy Materials and Devices, Xi'an Jiaotong University, Xi'an 710049, China
| | - Hui Wang
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education International Center for Dielectric Research and Shannxi Engineering Research Center of Advanced Energy Materials and Devices, Xi'an Jiaotong University, Xi'an 710049, China
| | - Jialin Dang
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education International Center for Dielectric Research and Shannxi Engineering Research Center of Advanced Energy Materials and Devices, Xi'an Jiaotong University, Xi'an 710049, China
| | - Nikolai V Gaponenko
- Belarusian State University of Informatics and Radioelectronics, P. Browki St.6, 220013 Minsk, Belarus
| | - Arshad Saleem Bhatti
- Centre for Micro and Nano Devices, Department of Physics, COMSATS Institute of Information Technology, Islamabad 44500, Pakistan
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