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Zhou Z, Zheng Z, He J, Wang J, Prezhdo OV, Frauenheim T. Ultrafast Laser Control of Antiferromagnetic-Ferrimagnetic Switching in Two-Dimensional Ferromagnetic Semiconductor Heterostructures. NANO LETTERS 2023. [PMID: 37307217 DOI: 10.1021/acs.nanolett.3c01350] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Realizing ultrafast control of magnetization switching is of crucial importance for information processing and recording technology. Here, we explore the laser-induced spin electron excitation and relaxation dynamics processes of CrCl3/CrBr3 heterostructures with antiparallel (AP) and parallel (P) systems. Although an ultrafast demagnetization of CrCl3 and CrBr3 layers occurs in both AP and P systems, the overall magnetic order of the heterostructure remains unchanged due to the laser-induced equivalent interlayer spin electron excitation. More crucially, the interlayer magnetic order switches from antiferromagnetic (AFM) to ferrimagnetic (FiM) in the AP system once the laser pulse disappears. The microscopic mechanism underpinning this magnetization switching is dominated by the asymmetrical interlayer charge transfer combined with a spin-flip, which breaks the interlayer AFM symmetry and ultimately results in an inequivalent shift in the moment between two FM layers. Our study opens up a new idea for ultrafast laser control of magnetization switching in two-dimensional opto-spintronic devices.
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Affiliation(s)
- Zhaobo Zhou
- Bremen Center for Computational Materials Science, University of Bremen, Bremen 28359, Germany
| | - Zhenfa Zheng
- Department of Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Junjie He
- Department of Physical and Macromolecular Chemistry, Faculty of Science, Charles University in Prague, Prague 12843, Czech Republic
| | - Jinlan Wang
- School of Physics, Southeast University, Nanjing 211189, China
| | - Oleg V Prezhdo
- Departments of Chemistry, and Physics and Astronomy, University of Southern California, Los Angeles, California 90089, United States
| | - Thomas Frauenheim
- School of Science, Constructor University, Bremen 28759, Germany
- Beijing Computational Science Research Center, Beijing 100193, China
- Shenzhen JL Computational Science and Applied Research Institute, Shenzhen 518109, China
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Hu Y, Hu X, Wang Y, Lu C, Krasheninnikov AV, Chen Z, Sun L. Suppressed Fermi Level Pinning and Wide-Range Tunable Schottky Barrier in CrX 3 (X = I, Br)/2D Metal Contacts. J Phys Chem Lett 2023; 14:2807-2815. [PMID: 36912604 DOI: 10.1021/acs.jpclett.3c00354] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
CrX3 (X = I, Br) monolayers exhibit outstanding performance in spintronic devices. However, the Schottky barrier at the CrX3/electrode interface severely impedes the charge injection efficiency. Herein, we propose two-dimensional (2D) metals as electrodes to form van der Waals (vdW) contact with CrX3 monolayers and systematically explore the contact properties of CrX3/metal by density functional theory (DFT) calculations. The results demonstrate that the strongly suppressed Fermi level pinning (FLP) effect and the wide-range tunable Schottky barrier can be achieved in CrX3/metal contacts. Specifically, the n-type and the p-type Schottky contacts can be realized in CrX3/metal contacts by choosing 2D metal electrodes with different work functions. Importantly, the pinning factors for CrX3/metal contacts are exceptionally larger than other commonly studied 2D semiconductors, indicating the strongly suppressed FLP in CrX3/metal contacts, which leads to the wide-range tunable Schottky barrier. Our findings provide guidance to the choice of electrodes and promote the development of CrX3-based spin devices.
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Affiliation(s)
- Yanmei Hu
- College of Materials Science and Engineering, Nanjing Tech University, Nanjing 211816, China
| | - Xiaohui Hu
- College of Materials Science and Engineering, Nanjing Tech University, Nanjing 211816, China
- Jiangsu Collaborative Innovation Center for Advanced Inorganic Function Composites, Nanjing Tech University, Nanjing 211816, China
| | - Yifeng Wang
- College of Materials Science and Engineering, Nanjing Tech University, Nanjing 211816, China
- Jiangsu Collaborative Innovation Center for Advanced Inorganic Function Composites, Nanjing Tech University, Nanjing 211816, China
| | - Chunhua Lu
- College of Materials Science and Engineering, Nanjing Tech University, Nanjing 211816, China
- Jiangsu Collaborative Innovation Center for Advanced Inorganic Function Composites, Nanjing Tech University, Nanjing 211816, China
| | - Arkady V Krasheninnikov
- Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, 01314 Dresden, Germany
- Department of Applied Physics, Aalto University School of Science, P.O. Box 11100, 00076 Aalto, Finland
| | - Zhongfang Chen
- Department of Chemistry, University of Puerto Rico, Rio Piedras Campus, San Juan, Puerto Rico 00931, United States
| | - Litao Sun
- SEU-FEI Nano-Pico Center, Key Laboratory of MEMS of Ministry of Education, Collaborative Innovation Center for Micro/Nano Fabrication, Device and System, Southeast University, Nanjing 210096, China
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Yu H, Li D, Shang Y, Pei L, Zhang G, Yan H, Wang L. Transport properties of MoS 2/V 7(Bz) 8 and graphene/V 7(Bz) 8 vdW junctions tuned by bias and gate voltages. RSC Adv 2022; 12:17422-17433. [PMID: 35765433 PMCID: PMC9189623 DOI: 10.1039/d2ra02196j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/05/2022] [Accepted: 06/06/2022] [Indexed: 12/02/2022] Open
Abstract
The MoS2/V7(Bz)8 and graphene/V7(Bz)8 vdW junctions are designed and the transport properties of their four-terminal devices are comparatively investigated based on density functional theory (DFT) and the nonequilibrium Green's function (NEGF) technique. The MoS2 and graphene nanoribbons act as the source-to-drain channel and the spin-polarized one-dimensional (1D) benzene-V multidecker complex nanowire (V7(Bz)8) serves as the gate channel. Gate voltages applied on V7(Bz)8 exert different influences of electron transport on MoS2/V7(Bz)8 and graphene/V7(Bz)8. In MoS2/V7(Bz)8, the interplay of source and gate bias potentials could induce promising properties such as negative differential resistance (NDR) behavior, output/input current switching, and spin-polarized currents. In contrast, the gate bias plays an insignificant effect on the transport along graphene in graphene/V7(Bz)8. This dissimilarity is attributed to the fact that the conductivity follows the sequence of MoS2 < V7(Bz)8 < graphene. These transport characteristics are examined by analyzing the conductivity, the currents, the local density of states (LDOS), and the transmission spectra. These results are valuable in designing multi-terminal nanoelectronic devices.
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Affiliation(s)
- Hong Yu
- School of Materials Science and Chemical Engineering, Harbin University of Science and Technology Harbin 150040 P. R. China
| | - Danting Li
- School of Materials Science and Chemical Engineering, Harbin University of Science and Technology Harbin 150040 P. R. China
| | - Yan Shang
- School of Materials Science and Chemical Engineering, Harbin University of Science and Technology Harbin 150040 P. R. China
| | - Lei Pei
- School of Materials Science and Chemical Engineering, Harbin University of Science and Technology Harbin 150040 P. R. China
| | - Guiling Zhang
- School of Materials Science and Chemical Engineering, Harbin University of Science and Technology Harbin 150040 P. R. China
| | - Hong Yan
- School of Materials Science and Chemical Engineering, Harbin University of Science and Technology Harbin 150040 P. R. China
| | - Long Wang
- HeiLongJiang Construction Investment Group Co. Ltd No. 523, Sanda Dongli Road Harbin 150040 P. R. China
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Guo Y, Zhang Y, Lu S, Zhang X, Zhou Q, Yuan S, Wang J. Coexistence of Semiconducting Ferromagnetics and Piezoelectrics down 2D Limit from Non van der Waals Antiferromagnetic LiNbO 3-Type FeTiO 3. J Phys Chem Lett 2022; 13:1991-1999. [PMID: 35188784 DOI: 10.1021/acs.jpclett.2c00091] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Stable two-dimensional (2D) ferromagnetic semiconductors (FMSs) with multifunctional properties have attracted extensive attention in device applications. Non van der Waals (vdW) transition-metal oxides with excellent environmental stability, if ferromagnetic (FM), may open up an unconventional and promising avenue for this subject, but they are usually antiferromagnetic or ferrimagnetic. Herein, we predict an FMS, monolayer Fe2Ti2O9, which can be obtained from LiNbO3-type FeTiO3 antiferromagnetic bulk, has a moderate band gap of 0.87 eV, large perpendicular magnetization (6 μB/fu) and a Curie temperature up to 110 K. The intriguing magnetic properties are derived from the double exchange and negative charge transfer between O_p orbitals and Fe_d orbitals. In addition, a large in-plane piezoelectric (PE) coefficient d11 of 5.0 pm/V is observed. This work offers a competitive candidate for multifunctional spintronics and may stimulate further experimental exploration of 2D non-vdW magnets.
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Affiliation(s)
- Yilv Guo
- School of Physics, Southeast University, Nanjing 211189, China
| | - Yehui Zhang
- School of Physics, Southeast University, Nanjing 211189, China
| | - Shuaihua Lu
- School of Physics, Southeast University, Nanjing 211189, China
| | - Xiwen Zhang
- School of Mechanism Engineering & School of Physics, Southeast University, Nanjing 211189, China
| | - Qionghua Zhou
- School of Physics, Southeast University, Nanjing 211189, China
| | - Shijun Yuan
- School of Physics, Southeast University, Nanjing 211189, China
| | - Jinlan Wang
- School of Physics, Southeast University, Nanjing 211189, China
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Wu Y, Sun W, Liu S, Wang B, Liu C, Yin H, Cheng Z. Ni(NCS) 2 monolayer: a robust bipolar magnetic semiconductor. NANOSCALE 2021; 13:16564-16570. [PMID: 34585189 DOI: 10.1039/d1nr04816c] [Citation(s) in RCA: 15] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Searching for experimentally feasible intrinsic two-dimensional ferromagnetic semiconductors is of great significance for applications of nanoscale spintronic devices. Here, based on the first-principles calculations, an Ni(NCS)2 monolayer was systematically investigated. The results showed that the Ni(NCS)2 monolayer was a robust bipolar ferromagnetic semiconductor with a moderate bandgap of ∼1.5 eV. Based on the Monte Carlo simulation, its Curie temperature was about 37 K. Interestingly, the Ni(NCS)2 monolayer remains ferromagnetic ordering when strain and electron doping were applied. However, ferromagnetic-to-antiferromagnetic phase transition occurred when high concentrations of holes were doped. Besides, the Ni(NCS)2 monolayer is confirmed to be potentially exfoliated from its bulk forms due to its small exfoliated energy. Finally, the Ni(NCS)2 monolayer's thermodynamic, dynamic, and mechanical stabilities were confirmed by the phonon spectrum calculation, ab initio molecular dynamics simulation and elastic constants calculation, respectively. The results showed that the Ni(NCS)2 monolayer, as a novel 2D ferromagnetic candidate material of new magnetic molecular framework materials, may have a promising potential for magnetic nanoelectronic devices.
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Affiliation(s)
- Yaxuan Wu
- Institute for Computational Materials Science, School of Physics and Electronics, Henan University, 475004, Kaifeng, People's Republic of China.
| | - Wei Sun
- Institute for Computational Materials Science, School of Physics and Electronics, Henan University, 475004, Kaifeng, People's Republic of China.
| | - Siyuan Liu
- Institute for Computational Materials Science, School of Physics and Electronics, Henan University, 475004, Kaifeng, People's Republic of China.
| | - Bing Wang
- Institute for Computational Materials Science, School of Physics and Electronics, Henan University, 475004, Kaifeng, People's Republic of China.
- International Joint Research Laboratory of New Energy Materials and Devices of Henan Province, 475004, Kaifeng, People's Republic of China
| | - Chang Liu
- Institute for Computational Materials Science, School of Physics and Electronics, Henan University, 475004, Kaifeng, People's Republic of China.
- International Joint Research Laboratory of New Energy Materials and Devices of Henan Province, 475004, Kaifeng, People's Republic of China
| | - Huabing Yin
- Institute for Computational Materials Science, School of Physics and Electronics, Henan University, 475004, Kaifeng, People's Republic of China.
- International Joint Research Laboratory of New Energy Materials and Devices of Henan Province, 475004, Kaifeng, People's Republic of China
| | - Zhenxiang Cheng
- Institute for Superconducting & Electronic Materials, Australian Institute of Innovative Materials, University of Wollongong, Innovation, Australia
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