Luminescence mechanism in hydrogenated silicon quantum dots with a single oxygen ligand

The luminescence mechanism of ligand-induced interface states in silicon quantum dots

Over decades of research on photoluminescence (PL) of silicon quantum dots (Si-QDs), extensive exploratory experiments have been conducted to find ways to improve the photoluminescence quantum yield. However, the complete physical picture of Si-QD luminescence is not yet clear and needs to be studied in depth. In this work, which considers the quantum size effect and surface effect, the optical properties of Si-QDs with different sizes and surface terminated ligands were calculated based on first principles calculations. The results show that there are significant differences in the emission wavelength and emission intensity of Si-QD interface states connected by different ligands, among which the emission of silicon-oxygen double bonds is the strongest. When the size of the Si-QD increases, the influence of the surface effect weakens, and only the silicon-oxygen double bonds still localize the charge near the ligand, maintaining a high-intensity luminescence. In addition, the presence of surface dangling bonds also affects luminescence. This study deepens the understanding of the photoluminescence mechanism of Si-QDs, and provides a direction for both future improvement of the photoluminescence quantum efficiency of silicon nanocrystals and for fabricating silicon-based photonic devices.

Solvent-Type Passivation Strategy Controls Solid-State Self-Quenching-Resistant Behavior in Sulfur Dots

Treatment of sulfur dots with polyethylene glycol (PEG) has been an efficient way to achieve a high luminescence quantum yield, and such a PEG-related quantum dot (QD)-synthesis strategy has been well documented. However, the polymeric insulating capping layer acting as the "thick shell" will significantly slow down the electron-transfer efficiency and severely hamper its practical application in an optoelectric field. Especially, the employment of synthetic polymers with long alkyl chains or large molecular weights may lead to structural complexity or even unexpected changes of physical characteristics for QDs. Therefore, in sulfur dot preparation, it is a breakthrough to use short-chain molecular species to replace PEG for better control and reproducibility. In this article, a solvent-type passivation (STP) strategy has been reported, and no PEG or any other capping agent is required. The main role of the solvent, ethanol, is to directly react with NaOH, and the generated sodium ethoxide passivates the surface defects. The afforded STP-enhanced emission sulfur dots (STPEE-SDs) possess not only the self-quenching-resistant feature in the solid state but also the extension of fluorescence band toward the wavelength as long as 645 nm. The realization of sulfur dot emission in the deep-red region with a decent yield (8.7%) has never been reported. Moreover, a super large Stokes shift (300 nm, λ_ex = 345 nm, λ_em = 645 nm) and a much longer decay lifetime (109 μs) have been found, and such values can facilitate to suppress the negative influence from background signals. Density functional theory demonstrates that the surface passivation via sodium ethoxide is dynamically favorable, and the spectroscopic insights into emission behavior could be derived from the passivation effect of the sulfur vacancy as well as the charge-transfer process dominated by the highly electronegative ethoxide layer.