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Wang Y, Li D, Duan S, Sun S, Ding Y, Bussolotti F, Sun M, Chen M, Wang M, Chen L, Wu K, Goh KEJ, Wee ATS, Zhou M, Feng B, Hua C, Huang YL, Chen W. Realization of Two-dimensional Intrinsic Polar metal in a Buckled Honeycomb Binary Lattice. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024:e2404341. [PMID: 39030759 DOI: 10.1002/adma.202404341] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/25/2024] [Revised: 07/12/2024] [Indexed: 07/22/2024]
Abstract
Structural topology and symmetry of a two-dimensional (2D) network play pivotal roles in defining its electrical properties and functionalities. Here, a binary buckled honeycomb lattice with C3v symmetry, which naturally hosts topological Dirac fermions and out-of-plane polarity, is proposed. It is successfully achieved in a group IV-V compound, namely monolayer SiP epitaxially grown on Ag(111) surface. Combining first-principles calculations with angle-resolved photoemission spectroscopy, the degeneration of the Dirac nodal lines to points due to the broken horizonal mirror symmetry is elucidated. More interesting, the SiP monolayer manifests metallic nature, which is mutually exclusive with polarity in conventional materials. It is further found that the out-of-plane polarity is strongly suppressed by the metallic substrate. This study not only represents a breakthrough of realizing intrinsic polarity in 2D metallic material via ingenious design but also provides a comprehensive understanding of the intricate interplay of many exotic low-dimensional quantum phenomena.
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Affiliation(s)
- Yihe Wang
- Joint School of National University of Singapore and Tianjin University, International Campus of Tianjin University, Binhai New City, Fuzhou, 350207, P. R. China
- Department of Chemistry, National University of Singapore, Singapore, 117543, Singapore
| | - Dong Li
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Sisheng Duan
- Department of Physics, National University of Singapore, Singapore, 117542, Singapore
| | - Shuo Sun
- Department of Physics, Shanghai Key Laboratory of High Temperature Superconductors, Shanghai University, Shanghai, 200444, China
| | - Yishui Ding
- Joint School of National University of Singapore and Tianjin University, International Campus of Tianjin University, Binhai New City, Fuzhou, 350207, P. R. China
- Department of Chemistry, National University of Singapore, Singapore, 117543, Singapore
| | - Fabio Bussolotti
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, #08-03 Innovis, Singapore, 138634, Republic of Singapore
| | - Mingyue Sun
- Joint School of National University of Singapore and Tianjin University, International Campus of Tianjin University, Binhai New City, Fuzhou, 350207, P. R. China
- Department of Physics, National University of Singapore, Singapore, 117542, Singapore
| | - Mingxi Chen
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, #08-03 Innovis, Singapore, 138634, Republic of Singapore
| | - Meng Wang
- Joint School of National University of Singapore and Tianjin University, International Campus of Tianjin University, Binhai New City, Fuzhou, 350207, P. R. China
- Department of Chemistry, National University of Singapore, Singapore, 117543, Singapore
| | - Lan Chen
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Kehui Wu
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Kuan Eng Johnson Goh
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, #08-03 Innovis, Singapore, 138634, Republic of Singapore
| | - Andrew T S Wee
- Department of Physics, National University of Singapore, Singapore, 117542, Singapore
| | - Miao Zhou
- Hangzhou International Innovation Institute, Beihang University, Hangzhou, 311115, China
- School of Physics, Beihang University, Beijing, 100191, P. R. China
| | - Baojie Feng
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Chenqiang Hua
- Hangzhou International Innovation Institute, Beihang University, Hangzhou, 311115, China
- School of Physics, Beihang University, Beijing, 100191, P. R. China
| | - Yu Li Huang
- Joint School of National University of Singapore and Tianjin University, International Campus of Tianjin University, Binhai New City, Fuzhou, 350207, P. R. China
| | - Wei Chen
- Joint School of National University of Singapore and Tianjin University, International Campus of Tianjin University, Binhai New City, Fuzhou, 350207, P. R. China
- Department of Chemistry, National University of Singapore, Singapore, 117543, Singapore
- Department of Physics, National University of Singapore, Singapore, 117542, Singapore
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Yin Y, Gong Q, Yi M, Guo W. Monolayer polar metals with large piezoelectricity derived from MoSi 2N 4. MATERIALS HORIZONS 2023; 10:5177-5184. [PMID: 37718912 DOI: 10.1039/d3mh00743j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/19/2023]
Abstract
The advancement of two-dimensional polar metals tends to be limited by the incompatibility between electric polarity and metallicity as well as dimension reduction. Here, we report polar and metallic Janus monolayers of the MoSi2N4 family by breaking the out-of-plane structural symmetry through Z (P/As) substitution of N. Despite the semiconducting nature of MoSi2X4 (X = N/P/As), four Janus MoSi2NxZ4-x monolayers are found to be polar metals owing to the weak coupling between the conducting electrons and electric polarity. The metallicity is originated from the Z substitution induced delocalization of occupied electrons in Mo-d orbitals. The out-of-plane electric polarizations around 1.5-15.7 pC m-1 are determined by the asymmetric out-of-plane charge distribution due to the non-centrosymmetric Janus structure. The corresponding out-of-plane piezoelectricity is further revealed as high as 18.7-73.3 pC m-1 and 0.05-0.25 pm V-1 for the piezoelectric strain and stress coefficients, respectively. The results demonstrate polar metallicity and high out-of-plane piezoelectricity in Janus MoSi2NxZ4-x monolayers and open new vistas for exploiting unusual coexisting properties in monolayers derived from the MoSi2N4 family.
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Affiliation(s)
- Yan Yin
- State Key Laboratory of Mechanics and Control for Aerospace Structures & Key Laboratory for Intelligent Nano Materials and Devices of Ministry of Education & Institute for Frontier Science & College of Aerospace Engineering, Nanjing University of Aeronautics and Astronautics (NUAA), Nanjing 210016, China.
| | - Qihua Gong
- State Key Laboratory of Mechanics and Control for Aerospace Structures & Key Laboratory for Intelligent Nano Materials and Devices of Ministry of Education & Institute for Frontier Science & College of Aerospace Engineering, Nanjing University of Aeronautics and Astronautics (NUAA), Nanjing 210016, China.
- MIIT Key Laboratory of Aerospace Information Materials and Physics & College of Physics, Nanjing University of Aeronautics and Astronautics (NUAA), Nanjing 211106, China
| | - Min Yi
- State Key Laboratory of Mechanics and Control for Aerospace Structures & Key Laboratory for Intelligent Nano Materials and Devices of Ministry of Education & Institute for Frontier Science & College of Aerospace Engineering, Nanjing University of Aeronautics and Astronautics (NUAA), Nanjing 210016, China.
| | - Wanlin Guo
- State Key Laboratory of Mechanics and Control for Aerospace Structures & Key Laboratory for Intelligent Nano Materials and Devices of Ministry of Education & Institute for Frontier Science & College of Aerospace Engineering, Nanjing University of Aeronautics and Astronautics (NUAA), Nanjing 210016, China.
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Man P, Huang L, Zhao J, Ly TH. Ferroic Phases in Two-Dimensional Materials. Chem Rev 2023; 123:10990-11046. [PMID: 37672768 DOI: 10.1021/acs.chemrev.3c00170] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 09/08/2023]
Abstract
Two-dimensional (2D) ferroics, namely ferroelectric, ferromagnetic, and ferroelastic materials, are attracting rising interest due to their fascinating physical properties and promising functional applications. A variety of 2D ferroic phases, as well as 2D multiferroics and the novel 2D ferrovalleytronics/ferrotoroidics, have been recently predicted by theory, even down to the single atomic layers. Meanwhile, some of them have already been experimentally verified. In addition to the intrinsic 2D ferroics, appropriate stacking, doping, and defects can also artificially regulate the ferroic phases of 2D materials. Correspondingly, ferroic ordering in 2D materials exhibits enormous potential for future high density memory devices, energy conversion devices, and sensing devices, among other applications. In this paper, the recent research progresses on 2D ferroic phases are comprehensively reviewed, with emphasis on chemistry and structural origin of the ferroic properties. In addition, the promising applications of the 2D ferroics for information storage, optoelectronics, and sensing are also briefly discussed. Finally, we envisioned a few possible pathways for the future 2D ferroics research and development. This comprehensive overview on the 2D ferroic phases can provide an atlas for this field and facilitate further exploration of the intriguing new materials and physical phenomena, which will generate tremendous impact on future functional materials and devices.
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Affiliation(s)
- Ping Man
- Department of Chemistry and Center of Super-Diamond & Advanced Films (COSDAF), City University of Hong Kong, Kowloon, Hong Kong 999077, P. R. China
- City University of Hong Kong Shenzhen Research Institute, Shenzhen 518057, P. R. China
| | - Lingli Huang
- Department of Chemistry and Center of Super-Diamond & Advanced Films (COSDAF), City University of Hong Kong, Kowloon, Hong Kong 999077, P. R. China
- City University of Hong Kong Shenzhen Research Institute, Shenzhen 518057, P. R. China
| | - Jiong Zhao
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong 999077, P. R. China
- The Hong Kong Polytechnic University Shenzhen Research Institute, Shenzhen 518057, P. R. China
| | - Thuc Hue Ly
- Department of Chemistry and Center of Super-Diamond & Advanced Films (COSDAF), City University of Hong Kong, Kowloon, Hong Kong 999077, P. R. China
- City University of Hong Kong Shenzhen Research Institute, Shenzhen 518057, P. R. China
- Department of Chemistry and State Key Laboratory of Marine Pollution, City University of Hong Kong, Kowloon, Hong Kong 999077, P. R. China
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Liang Y, Lv X, Frauenheim T. Carrier doping-induced strong magnetoelastic coupling in 2D lattice. NANOSCALE 2022; 14:3261-3268. [PMID: 35166297 DOI: 10.1039/d1nr08459c] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
The realization of intertwined ferroelasticity and ferromagnetism in two-dimensional (2D) lattices is of great interest for broad nanoscale applications but still remains a remarkable challenge. Here, we propose an alternative approach to realize the strongly coupled ferromagnetism and ferroelasticity by carrier doping. We demonstrate that prototypical 2D β-PbO is dynamically, thermally and mechanically stable. Under hole doping, 2D β-PbO possesses ferromagnetism and ferroelasticity simultaneously. Moreover, the robustness of ferromagnetic and ferroelastic orders is doping tunable. In particular, 2D β-PbO features an in-plane easy magnetization axis that is coupled with the lattice direction, enabling the ferroelastic manipulation of the spin direction. Furthermore, the efficient ferroelastic control of the anisotropic optical property and spin splitting in 2D β-PbO are also clarified. Our study highlights a new direction for 2D magnetoelastic research and enables the possibility for multifunctional devices.
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Affiliation(s)
- Yan Liang
- Bremen Center for Computational Materials Science, University of Bremen, 28359 Bremen, Germany.
| | - Xingshuai Lv
- Shenzhen JL Computational Science and Applied Research Institute, 518109 Shenzhen, P.R. China
| | - Thomas Frauenheim
- Bremen Center for Computational Materials Science, University of Bremen, 28359 Bremen, Germany.
- Shenzhen JL Computational Science and Applied Research Institute, 518109 Shenzhen, P.R. China
- Beijing Computational Science Research Center, 100193 Beijing, P.R. China
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Yao CJ, Huang HF, Yao Y, Wu YZ, Hao X. Coexistence of polar distortion and conduction in doped 2D group-IV ferroelectrics: SiGe, SiSn, and GeSn. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2021; 33:145302. [PMID: 33565420 DOI: 10.1088/1361-648x/abdce9] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/06/2020] [Accepted: 01/18/2021] [Indexed: 06/04/2023]
Abstract
Since the concept of ferroelectric metal predicted in the 1960s has been experimentally realized in the bulk Weyl semimetal WTe2[Sharmaet al2019Sci. Adv.5, eaax5080], it is significant to find the ultrathin polar metal or ferroelectric metal due to the demand of miniature of electronic nanodevices. Here, 2D buckled monolayers composed of group-IV elements such as SiGe, SiSn, and GeSn are selected as prototype. Then, the stability of 2D ferroelectricity in the above monolayers are confirmed based on the results of first-principles calculations. Most interesting, a robustly metallic polar state has been found in the above 2D ferrolectrics under both the electron doping and hole doping, and the polar distortion becomes even more remarkable when the electrons are doped as compared with the undoped system. Thus, the coexistence of polar state and conduction is theoretically verified in the doped group-IV monolayers. We hope the 2D ferroelectric materials can be used as a starting point to look for the polar metals with atomic thickness, and further broaden their applications in 2D electronics or spintronics in the future.
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Affiliation(s)
- Cheng-Jun Yao
- Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application, and School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou 215009, People's Republic of China
| | - Hong-Fei Huang
- Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application, and School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou 215009, People's Republic of China
| | - Yang Yao
- Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application, and School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou 215009, People's Republic of China
| | - Yin-Zhong Wu
- Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application, and School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou 215009, People's Republic of China
| | - Xiang Hao
- Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application, and School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou 215009, People's Republic of China
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