A Review on the Properties and Applications of WO3 Nanostructure-Based Optical and Electronic Devices

Tungsten oxide (WO3) is a wide band gap semiconductor with unintentionally n-doping performance, excellent conductivity, and high electron hall mobility, which is considered as a candidate material for application in optoelectronics. Several reviews on WO3 and its derivatives for various applications dealing with electrochemical, photoelectrochemical, hybrid photocatalysts, electrochemical energy storage, and gas sensors have appeared recently. Moreover, the nanostructured transition metal oxides have attracted considerable attention in the past decade because of their unique chemical, photochromic, and physical properties leading to numerous other potential applications. Owing to their distinctive photoluminescence (PL), electrochromic and electrical properties, WO3 nanostructure-based optical and electronic devices application have attracted a wide range of research interests. This review mainly focuses on the up-to-date progress in different advanced strategies from fundamental analysis to improve WO3 optoelectric, electrochromic, and photochromic properties in the development of tungsten oxide-based advanced devices for optical and electronic applications including photodetectors, light-emitting diodes (LED), PL properties, electrical properties, and optical information storage. This review on the prior findings of WO3-related optical and electrical devices, as well as concluding remarks and forecasts will help researchers to advance the field of optoelectric applications of nanostructured transition metal oxides.

Excellent optoelectronic applications and electrical transport behavior of the n-WO3nanostructures/p-diamond heterojunction: a new perspective

Nanostructured n-type metal oxides/p-type boron-doped diamond heterojunctions have demonstrated a typical rectification feature and/or negative differential resistance (NDR) potentially applied in wide fields. Recently, the fabrication and electronic transport behavior of n-WO₃nanorods/p-diamond heterojunction at high temperatures were studied by Wanget al(2017Appl. Phys. Lett.110052106), which opened the door for optoelectronic applications that can operate at high-temperatures, high-power, and in various harsh environments. In this perspective, an overview was presented on the future directions, challenges and opportunities for the optoelectronic applications based on the n-WO₃nanostructures/p-diamond heterojunction. We focus, in particular, on the prospects for its high temperature NDR, UV photodetector, field emission emitters, photocatalyst and optical information storage for a wide range of new optoelectronic applications.

Photosensitive activity of fabricated core-shell composite nanostructured p-CuO@CuS/n-Si diode for photodetection applications

Development of photo detectors based on different semiconducting materials with high performance has been in progress in recent past, however, there is a lot of difficulties in developing the more effective photo detectors-based devices with high responsivity, detectivity and quantum efficiency. Hence, we have synthesized pure CuS and CuO@CuS core-shell heterostructure based photo detectors with high performance by simple and cost-effective two-step chemical co-precipitation method. The phase purity of CuS and CuO@CuS composite was observed by XRD analysis and the result were verified with Raman spectroscopy studies. Sphere like morphology of pure CuS and core-shell structure formation of CuO@CuS are observed with scanning and transmission electron microscopes. The presence of expected elements has been confirmed with EDX elemental mapping. Light harvesting photodiodes were fabricated by using n-type silicon substrate through drop cost method. Photo sensitive parameters of fabricated diodes were analyzed by I-V characteristics. The p-CuO@CuS (1:1)/n-Si diode owned a maximum photosensitivity (Ps) ∼ 7.76 × 10⁴ %, photoresponsivity (R) ∼ 798.61 mA/W, external quantum efficiency ( E Q E )∼309.66 % and specific detectivity (D*) ∼ 8.19 × 10¹¹ Jones when compared to p-CuS/n-Si diode. The obtained results revealed that the core/shell heterostructure of CuO@CuS is the most appropriate for photo detection.

Fabrication of strontium included hafnium oxide thin film based Al/Sr:HfO2/n-Si MIS-Schottky barrier diodes for tuned electrical behavior

Synthesis of Sr included HfO2 for fabrication of a Schottky barrier diode.