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Li M, Chang J, Sun R, Wang H, Tian Q, Chen S, Wang J, He Q, Zhao G, Xu W, Li Z, Zhang S, Wang F, Qin T. Underlying Interface Defect Passivation and Charge Transfer Enhancement via Sulfonated Hole-Transporting Materials for Efficient Inverted Perovskite Solar Cells. ACS APPLIED MATERIALS & INTERFACES 2022; 14:53331-53339. [PMID: 36395380 DOI: 10.1021/acsami.2c16591] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
To date, numbers of polymeric hole-transporting materials (HTMs) have been developed to improve interfacial charge transport to achieve high-performance inverted perovskite solar cells (PSCs). However, molecular design for passivating the underlying surface defects between perovskite and HTMs is a neglected issue, which is a major bottleneck to further enhance the performance of the inverted devices. Herein, we design and synthesize a new polymeric HTM PsTA-mPV with the methylthiol group, in which a lone pair of electrons of sulfur atoms can passivate the underlying interface defects of the perovskite more efficiently by coordinating Pb2+ vacancies. Furthermore, PsTA-mPV exhibits a deeper highest occupied molecular orbital (HOMO) level aligned with perovskite due to the π-acceptor capability of sulfur, which improves interfacial charge transfer between perovskite and the HTM layer. Using PsTA-mPV as a dopant-free HTM, the inverted PSCs show 20.2% efficiency and long-term stability, which is ascribed to surface defect passivation, well energy-level matching with perovskite, and efficient charge extraction.
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Affiliation(s)
- Mubai Li
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), Nanjing 211816, Jiangsu, China
| | - Jingxi Chang
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), Nanjing 211816, Jiangsu, China
| | - Riming Sun
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), Nanjing 211816, Jiangsu, China
| | - Hongze Wang
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), Nanjing 211816, Jiangsu, China
| | - Qiushuang Tian
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), Nanjing 211816, Jiangsu, China
| | - Shaoyu Chen
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), Nanjing 211816, Jiangsu, China
| | - Junbo Wang
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), Nanjing 211816, Jiangsu, China
| | - Qingyun He
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), Nanjing 211816, Jiangsu, China
| | - Guiqiu Zhao
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), Nanjing 211816, Jiangsu, China
| | - Wenxin Xu
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), Nanjing 211816, Jiangsu, China
| | - Zihao Li
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), Nanjing 211816, Jiangsu, China
| | - Shitong Zhang
- State Key Laboratory of Supramolecular Structure and Materials, Jilin University, Changchun 130012, China
| | - Fangfang Wang
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), Nanjing 211816, Jiangsu, China
| | - Tianshi Qin
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), Nanjing 211816, Jiangsu, China
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Zhu W, Zhou K, Fo Y, Li Y, Guo B, Zhang X, Zhou X. Rational design of small molecule hole-transporting materials with a linear π-bridge for highly efficient perovskite solar cells. Phys Chem Chem Phys 2022; 24:18793-18804. [PMID: 35904025 DOI: 10.1039/d2cp02036j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Developing highly efficient small molecule hole-transporting materials (HTMs) to improve the performance of devices is one of the hot topics in the progress of perovskite solar cells (PSCs). In this work, a series of molecules are designed by utilizing benzocyclobutadiene (C1), bicyclo[6.2.0]decapentaene (C2), naphthalene (C3), biphenylene (C4), fluorene (C5), and azulene (C6) as the π-cores, and p-methoxydiphenylamine (R1), p-methoxytriphenylamine (R2) and p-methoxydiphenylamine-substituted carbazole (R3) as the peripheral groups. For isolated molecules, frontier molecule orbitals, absorption and emission spectra, Stokes shift, stability, solubility, and hole mobility are assessed by density functional theory calculations along with the Marcus theory of electron transfer. The molecules adsorbed on the surface of CH3NH3PbI3 are used to simulate the interfacial properties between HTMs and perovskites. Our results indicate that varying the central bridge and the terminal groups has a remarkable influence on the properties. The designed R2-Cn (n = 3, 4, 5) have deeper HOMO levels, stronger absorption in the UV region, and larger Stokes shift than Spiro-OMeTAD. They also possess good solubility, stability, and hole mobility. The proper alignment of interfacial energy levels ensures the transfer of holes from CH3NH3PbI3 to the studied molecules and blocks the backflow of electrons simultaneously. Significant charge redistributions around the interfacial region benefit the separation and transfer photogenerated electron-hole pairs. The results of the present study can be further employed in the process of synthesizing new HTMs with promising features.
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Affiliation(s)
- Wenjing Zhu
- College of Environment and Chemical Engineering, Dalian University, Dalian 116622, Liaoning, China.
| | - Keyu Zhou
- College of Environment and Chemical Engineering, Dalian University, Dalian 116622, Liaoning, China.
| | - Yumeng Fo
- College of Environment and Chemical Engineering, Dalian University, Dalian 116622, Liaoning, China.
| | - Yi Li
- College of Environment and Chemical Engineering, Dalian University, Dalian 116622, Liaoning, China.
| | - Bin Guo
- College of Environment and Chemical Engineering, Dalian University, Dalian 116622, Liaoning, China.
| | - Xinyu Zhang
- College of Environment and Chemical Engineering, Dalian University, Dalian 116622, Liaoning, China.
| | - Xin Zhou
- College of Environment and Chemical Engineering, Dalian University, Dalian 116622, Liaoning, China.
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Xu W, Zhao G, Li M, Pan Y, Ma H, Sun R, Wang J, Liu Y, Chen C, Huang W, Wang F, Qin T. Tailored Polymeric Hole-Transporting Materials Inducing High-Quality Crystallization of Perovskite for Efficient Inverted Photovoltaic Devices. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2106632. [PMID: 35460192 DOI: 10.1002/smll.202106632] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/07/2021] [Revised: 03/22/2022] [Indexed: 06/14/2023]
Abstract
For achieving high-performance p-i-n perovskite solar cells (PSCs), hole transporting materials (HTMs) are critical to device functionality and represent a major bottleneck to further enhancing device stability and efficiency in the inverted devices. Three dopant-free polymeric HTMs are developed based on different linkage sites of triphenylamine and phenylenevinylene repeating units in their main backbone structures. The backbone curvatures of the polymeric HTMs affect the morphology and hole mobility of the polymers and further change the crystallinity of perovskite films. By using PTA-mPV with moderate molecular curvature, p-i-n PSCs with high efficiency of 19.5% and long-term stability can be achieved. The better performance is attributed to the more effective hole extraction ability, higher charge-carrier mobility, and lower interfacial charge recombination. Furthermore, these three polymeric HTMs are synthesized without any noble metal catalyst, and show great advantages in future application owing to the low-cost.
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Affiliation(s)
- Wenxin Xu
- Key Laboratory of Flexible Electronics (KLOFE) and Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), Nanjing, Jiangsu, 211816, China
| | - Guiqiu Zhao
- Key Laboratory of Flexible Electronics (KLOFE) and Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), Nanjing, Jiangsu, 211816, China
| | - Mubai Li
- Key Laboratory of Flexible Electronics (KLOFE) and Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), Nanjing, Jiangsu, 211816, China
| | - Yuyu Pan
- School of Petrochemical Engineering, Shenyang University of Technology, 30 Guanghua Street, Liaoyang, 111003, P. R. China
| | - Hongzhuang Ma
- Key Laboratory of Flexible Electronics (KLOFE) and Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), Nanjing, Jiangsu, 211816, China
| | - Riming Sun
- Key Laboratory of Flexible Electronics (KLOFE) and Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), Nanjing, Jiangsu, 211816, China
| | - Jungan Wang
- Key Laboratory of Flexible Electronics (KLOFE) and Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), Nanjing, Jiangsu, 211816, China
| | - You Liu
- Key Laboratory of Flexible Electronics (KLOFE) and Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), Nanjing, Jiangsu, 211816, China
| | - Cheng Chen
- Key Laboratory of Flexible Electronics (KLOFE) and Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), Nanjing, Jiangsu, 211816, China
| | - Wei Huang
- Key Laboratory for Organic Electronics and Information Displays (KLOEID) and Institute of Advanced Materials (IAM), Nanjing University of Posts and Telecommunications, Nanjing, Jiangsu, 210023, China
- Frontiers Science Center for Flexible Electronics and Institute of Flexible Electronics (IFE), Northwestern Polytechnical University (NPU), Xi'an, Shaanxi, 710072, China
| | - Fangfang Wang
- Key Laboratory of Flexible Electronics (KLOFE) and Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), Nanjing, Jiangsu, 211816, China
| | - Tianshi Qin
- Key Laboratory of Flexible Electronics (KLOFE) and Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), Nanjing, Jiangsu, 211816, China
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