2D tetragonal transition-metal phosphides: an ideal platform to screen metal shrouded crystals for multifunctional applications

Strain-dependent magnetic ordering switching in 2D AFM ternary V-based chalcogenide monolayers

The lack of macroscopic magnetic moments makes antiferromagnetic materials promising candidates for high-speed spintronic devices. The 2D ternary V-based chalcogenides (VXYSe4; X, Y = Al, Ga) monolayers are investigated based on the density-functional theory and Monte Carlo simulations. The results reveal that the Néel temperature of the VGa2Se4 monolayer is 18 K with zigzag2-antiferromagnetic (AFM) spin ordering. Also, the magnetic ordering of V ions in VAl2Se4 and VAlGaSe4 monolayers prefer zigzag1-AFM coupling with Néel temperature of 47 K and 33 K, respectively. The magnetic anisotropy calculations demonstrate that the easy magnetization axis of the VXYSe4 monolayers is parallel to the y axis. In addition, the VXYSe4 monolayers can be adjusted from the AFM state to the ferromagnetic (FM) state under biaxial stretching, which can be attributed to the competition between d-p-d superexchange and d-d direct exchange caused by the variation of bond length. The transition temperature of VXYSe4 monolayers can be elevated above room temperature with the help of compression strain. In particular, the in-plane magnetic anisotropy is a robust characteristic regardless of the magnitude of the applied biaxial strain. These explorations not only enrich the family of AFM monolayers with excellent stability but also provide distinctive ideas for the performance control of AFM materials and their applications in nanodevices.

A valence balancing rule for the design of bimetallic phosphides targeting high thermoelectric performance

Two-dimensional (2D) materials with outstanding electronic and mechanical properties have attracted considerable attention as efficient thermoelectric materials. Here, we propose a generalized eight-valence electron rule for designing 2D semiconductor materials, i.e., metal-shrouded bimetallic phosphides ABP (A: group IA element, B: group IIA element). Following this rule, we screen out ten stable semiconductors (LiMgP, LiCaP, LiSrP, NaBeP, NaMgP, KMgP, KCaP, RbMgP, RbCaP and RbSrP) with tunable bandgaps in the range of 0.35-2.40 eV by comprehensive first-principles calculations. Among them, the electron mobility of RbMgP can be as high as 2.3 × 10⁴ cm² V^-1 s^-1, and the hole mobility of KMgP is estimated to be 9.9 × 10³ cm² V^-1 s^-1. Moreover, KMgP, KCaP, RbCaP and RbSrP exhibit an ultralow thermal conductivity of 0.02, 0.14, 0.08 and 0.14 W m^-1 K^-1, respectively. As a result, KMgP and RbCaP monolayers are p-type or n-type thermoelectric materials with a figure of merit of 2.25 and 1.13 at room temperature, respectively. The underlying mechanism of high electron conductivity and low thermal conductivity has been correlated with their unique bonding characteristics, narrow phonon band gap and the scattering from low-frequency phonons. This work demonstrates not only a guiding electron principle to design stable 2D semiconductors, but also a powerful metal-shrouded strategy for discovering high performance thermoelectric materials by decoupling electronic and thermal transport properties.

Electronic and optical properties of two-dimensional heterostructures based on Janus XSSe (X = Mo, W) and Mg(OH)2: a first principles investigation

Two-dimensional (2D) materials have attracted numerous investigations after the discovery of graphene. 2D van der Waals (vdW) heterostructures are a new generation of layered materials, which can provide more desirable applications. In this study, the first principles calculation was implemented to study the heterostructures based on Janus TMDs (MoSSe and WSSe) and Mg(OH)₂ monolayers, which were constructed by vdW interactions. Both MoSSe/Mg(OH)₂ and WSSe/Mg(OH)₂ vdW heterostructures have thermal and dynamic stability. Besides, XSSe/Mg(OH)₂ (X = Mo, W) possesses a direct bandgap with a type-I band alignment, which provides promising applications for light-emitting devices. The charge density difference was investigated, and 0.003 (or 0.0042) |e| were transferred from MoSSe (or WSSe) layer to Mg(OH)₂ layer, and the potential drops were calculated to be 11.59 and 11.44 eV across the interface of the MoSSe/Mg(OH)₂ and WSSe/Mg(OH)₂ vdW heterostructures, respectively. Furthermore, the MoSSe/Mg(OH)₂ and WSSe/Mg(OH)₂ vdW heterostructures have excellent optical absorption wave. Our studies exhibit an effective method to construct new heterostructures based on Janus TMDs and develop their applications for future light emitting devices.

Two-dimensional (2D) materials have attracted numerous investigations after the discovery of graphene.

Ferromagnetic Dirac half-metallicity in transition metal embedded honeycomb borophene

Exploring two-dimensional (2D) ferromagnetic materials with intrinsic Dirac half-metallicity is crucial for the development of next-generation spintronic devices. Based on first-principles calculations, here we propose a simple valence electron-counting rule to design such materials and endow them with good stability and desirable magnetic properties. Taking honeycomb borophene as a prototype, we demonstrate that embedding open-shell transition metal (like Cr) atoms in the hexagonal ring of boron atoms can provide two valence electrons to fully occupy the in-plane σ and out-of-plane π bands of B atoms. The remaining four valence electrons reside in d orbitals that split under C_6v symmetry, yielding a magnetic moment of ∼2 μ_B per Cr atom. The resulting CrB₂ monolayer exhibits a Dirac half-metal band structure, a high Curie temperature of 175 K, and a large out-of-plane magnetic anisotropy energy of 4 meV per Cr simultaneously. Our work establishes a feasible route for the experimental realization of ferromagnetic Dirac half-metallicity in 2D materials and provides new opportunity to realize high-speed devices with low consumption.

Theoretical Investigation of the Prospect to Tailor ZnO Electronic Properties with VP Thin Films

The atomic and electronic structure of vanadium phosphide one- to four-atomic-layer thin films and their composites with zinc oxide substrate are modelled by means of quantum chemistry. Favorable vanadium phosphide to ZnO orientation is defined and found to remain the same for all the structures under consideration. The electronic structure of the composites is analyzed in detail. The features of the charge and spin density distribution are discussed.

MX Anti-MXenes from Non-van der Waals Bulks for Electrochemical Applications: The Merit of Metallicity and Active Basal Plane

Two-dimensional transition-metal compounds (2DTMCs) are promising materials for electrochemical applications, but 2DTMCs with metallicity and active basal planes are rare. In this work, we proposed a simple and effective strategy to extract 2DTMCs from non-van der Waals bulk materials and established a material library of 79 2DTMCs, which we named as anti-MXenes since they are composed of one M atomic layer sandwiched by two X atomic layers. By means of density functional theory computations, 24 anti-MXenes were confirmed to be thermodynamically, dynamically, mechanically, and thermally stable. The metallicity and active basal plane endow these anti-MXenes with potential as excellent electrode materials, for example, as electrocatalysts for hydrogen evolution reactions (HER). Among the noble-metal free anti-MXenes with favorable H-binding, CuS can boost HER at the whole range of H coverages, while CoSi, FeB, CoB, and CoP show promise for HER at some specific H coverages. The active sites are the tetra-coordinating nonmetal atoms at the basal planes, thus rendering a very high density of active sites for these materials. CoB is also a promising anode material for lithium-ion batteries, showing low Li diffusion energy barriers, a very high capacity, and a suitable open circuit voltage. This work promotes the "computational exfoliation" of 2D materials from non-van der Waals bulks and exemplifies the applications of anti-MXenes in various electrochemical processes.

Highly selective electroreduction of nitrate to ammonia on a Ru-doped tetragonal Co2P monolayer with low-limiting overpotential

A Ru-doped Co2P monolayer is constructed to modulate the d-band center close to the value at the volcano top and its limiting potential is −0.38 V, exhibiting excellent activity as well as selectivity.