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Zhang N, Yan J, Wang L, Zhang J, Zhang Z, Miao T, Zheng C, Jiang Z, Hu H, Zhong Z. Hexagonal-Ge Nanostructures with Direct-Bandgap Emissions in a Si-Based Light-Emitting Metasurface. ACS NANO 2024; 18:328-336. [PMID: 38147566 DOI: 10.1021/acsnano.3c06279] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/28/2023]
Abstract
Si-based emitters have been of great interest as an ideal light source for monolithic optical-electronic integrated circuits (MOEICs) on Si substrates. However, the general Si-based material is a diamond structure of cubic lattice with an indirect band gap, which cannot emit light efficiently. Here, hexagonal-Ge (H-Ge) nanostructures within a light-emitting metasurface consisting of a cubic-SiGe nanodisk array are reported. The H-Ge nanostructure is naturally formed within the cubic-Ge epitaxially grown on Si (001) substrates due to the strain-induced nanoscale crystal structure transformation assisted by far-from-equilibrium growth conditions. The direct-bandgap features of H-Ge nanostructures are observed and discussed, including a rather strong and linearly power-dependent photoluminescence (PL) peak around 1562 nm at room temperature and temperature-insensitive PL spectrum near room temperature. Given the direct-bandgap nature, the heterostructure of H-Ge/C-Ge, and the compatibility with the sophisticated Si technology, the H-Ge nanostructure has great potential for innovative light sources and other functional devices, particularly in Si-based MOEICs.
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Affiliation(s)
- Ningning Zhang
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200438, P. R. China
- Key Laboratory of Analog Integrated Circuits and Systems, Ministry of Education, School of Microelectronics, Xidian University, Xi'an 710071, P. R. China
| | - Jia Yan
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200438, P. R. China
| | - Liming Wang
- Key Laboratory of Analog Integrated Circuits and Systems, Ministry of Education, School of Microelectronics, Xidian University, Xi'an 710071, P. R. China
| | - Jiarui Zhang
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200438, P. R. China
| | - Zhifang Zhang
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200438, P. R. China
| | - Tian Miao
- Key Laboratory of Analog Integrated Circuits and Systems, Ministry of Education, School of Microelectronics, Xidian University, Xi'an 710071, P. R. China
| | - Changlin Zheng
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200438, P. R. China
| | - Zuimin Jiang
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200438, P. R. China
| | - Huiyong Hu
- Key Laboratory of Analog Integrated Circuits and Systems, Ministry of Education, School of Microelectronics, Xidian University, Xi'an 710071, P. R. China
| | - Zhenyang Zhong
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200438, P. R. China
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