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Zhang C, Fortner J, Wang P, Fagan JA, Wang S, Liu M, Maruyama S, Wang Y. van der Waals SWCNT@BN Heterostructures Synthesized from Solution-Processed Chirality-Pure Single-Wall Carbon Nanotubes. ACS NANO 2022; 16:18630-18636. [PMID: 36346984 DOI: 10.1021/acsnano.2c07128] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Single-wall carbon nanotubes in boron nitride (SWCNT@BN) are one-dimensional van der Waals heterostructures that exhibit intriguing physical and chemical properties. As with their carbon nanotube counterparts, these heterostructures can form from different combinations of chiralities, providing rich structures but also posing a significant synthetic challenge to controlling their structure. Enabled by advances in nanotube chirality sorting, clean removal of the surfactant used for solution processing, and a simple method to fabricate free-standing submonolayer films of chirality pure SWCNTs as templates for the BN growth, we show it is possible to directly grow BN on chirality enriched SWCNTs from solution processing to form van der Waals heterostructures. We further report factors affecting the heterostructure formation, including an accelerated growth rate in the presence of H2, and significantly improved crystallization of the grown BN, with the BN thickness controlled down to one single BN layer, through the presence of a Cu foil in the reactor. Transmission electron microscopy and electron energy-loss spectroscopic mapping confirm the synthesis of SWCNT@BN from the solution purified nanotubes. The photoluminescence peaks of both (7,5)- and (8,4)-SWCNT@BN heterostructures are found to redshift (by ∼10 nm) relative to the bare SWCNTs. Raman scattering suggests that the grown BN shells pose a confinement effect on the SWCNT core.
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Affiliation(s)
- Chiyu Zhang
- Department of Chemistry and Biochemistry, University of Maryland, 8051 Regents Drive, College Park, Maryland 20742, United States
| | - Jacob Fortner
- Department of Chemistry and Biochemistry, University of Maryland, 8051 Regents Drive, College Park, Maryland 20742, United States
| | - Peng Wang
- Department of Chemistry and Biochemistry, University of Maryland, 8051 Regents Drive, College Park, Maryland 20742, United States
| | - Jeffrey A Fagan
- Materials Science and Engineering Division, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, United States
| | - Shuhui Wang
- Department of Mechanical Engineering, The University of Tokyo, Tokyo 113-8656, Japan
| | - Ming Liu
- Department of Mechanical Engineering, The University of Tokyo, Tokyo 113-8656, Japan
| | - Shigeo Maruyama
- Department of Mechanical Engineering, The University of Tokyo, Tokyo 113-8656, Japan
| | - YuHuang Wang
- Department of Chemistry and Biochemistry, University of Maryland, 8051 Regents Drive, College Park, Maryland 20742, United States
- Maryland NanoCenter, University of Maryland, College Park, Maryland 20742, United States
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Liu W, Li X, Wang Y, Xu R, Ying H, Wang L, Cheng Z, Hao Y, Chen S. Direct growth of hBN/Graphene heterostructure via surface deposition and segregation for independent thickness regulation. NANOTECHNOLOGY 2022; 33:475601. [PMID: 35970145 DOI: 10.1088/1361-6528/ac8994] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/17/2022] [Accepted: 08/14/2022] [Indexed: 06/15/2023]
Abstract
Hexagonal boron nitride/graphene (hBN/G) vertical heterostructures have attracted extensive attention, owing to the unusual physical properties for basic research and electronic device applications. Here we report a facile deposition-segregation technique to synthesize hBN/G heterostructures on recyclable platinum (Pt) foil via low pressure chemical vapor deposition. The growth mechanism of the vertical hBN/G is demonstrated to be the surface deposition of hBN on top of the graphene segregated from the Pt foil with pre-dissolved carbon. The thickness of hBN and graphene can be controlled separately from sub-monolayer to multilayer through the fine control of the growth parameters. Further investigations by Raman, scanning Kelvin probe microscopy and transmission electron microscope show that the hBN/G inclines to form a heterostructure with strong interlayer coupling and with interlayer twist angle smaller than 1.5°. This deposition-segregation approach paves a new pathway for large-scale production of hBN/G heterostructures and could be applied to synthesize of other van der Waals heterostructures.
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Affiliation(s)
- Wenyu Liu
- Department of Physics, Renmin University of China, Beijing 100872, People's Republic of China
| | - Xiuting Li
- Innovation Laboratory for Sciences and Technologies of Energy Materials of Fujian Province (IKKEM), Xiamen 361005, People's Republic of China
| | - Yushu Wang
- National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences, Jiangsu Key Laboratory of Artificial Functional Materials, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210023, People's Republic of China
- School of Physics and Microelectronics, Zhengzhou University, Zhengzhou, Henan 450001, People's Republic of China
| | - Rui Xu
- Department of Physics, Renmin University of China, Beijing 100872, People's Republic of China
| | - Hao Ying
- Department of Physics, Renmin University of China, Beijing 100872, People's Republic of China
| | - Le Wang
- Department of Physics, Renmin University of China, Beijing 100872, People's Republic of China
| | - Zhihai Cheng
- Department of Physics, Renmin University of China, Beijing 100872, People's Republic of China
| | - Yufeng Hao
- National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences, Jiangsu Key Laboratory of Artificial Functional Materials, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210023, People's Republic of China
| | - Shanshan Chen
- Department of Physics, Renmin University of China, Beijing 100872, People's Republic of China
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One-dimensional van der Waals heterostructures: Growth mechanism and handedness correlation revealed by nondestructive TEM. Proc Natl Acad Sci U S A 2021; 118:2107295118. [PMID: 34508003 PMCID: PMC8449348 DOI: 10.1073/pnas.2107295118] [Citation(s) in RCA: 17] [Impact Index Per Article: 5.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Accepted: 08/06/2021] [Indexed: 11/18/2022] Open
Abstract
We recently synthesized one-dimensional (1D) van der Waals heterostructures in which different atomic layers (e.g., boron nitride or molybdenum disulfide) seamlessly wrap around a single-walled carbon nanotube (SWCNT) and form a coaxial, crystalized heteronanotube. The growth process of 1D heterostructure is unconventional-different crystals need to nucleate on a highly curved surface and extend nanotubes shell by shell-so understanding the formation mechanism is of fundamental research interest. In this work, we perform a follow-up and comprehensive study on the structural details and formation mechanism of chemical vapor deposition (CVD)-synthesized 1D heterostructures. Edge structures, nucleation sites, and crystal epitaxial relationships are clearly revealed using transmission electron microscopy (TEM). This is achieved by the direct synthesis of heteronanotubes on a CVD-compatible Si/SiO2 TEM grid, which enabled a transfer-free and nondestructive access to many intrinsic structural details. In particular, we have distinguished different-shaped boron nitride nanotube (BNNT) edges, which are confirmed by electron diffraction at the same location to be strictly associated with its own chiral angle and polarity. We also demonstrate the importance of surface cleanness and isolation for the formation of perfect 1D heterostructures. Furthermore, we elucidate the handedness correlation between the SWCNT template and BNNT crystals. This work not only provides an in-depth understanding of this 1D heterostructure material group but also, in a more general perspective, serves as an interesting investigation on crystal growth on highly curved (radius of a couple of nanometers) atomic substrates.
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Feng Y, Li H, Inoue T, Chiashi S, Rotkin SV, Xiang R, Maruyama S. One-Dimensional van der Waals Heterojunction Diode. ACS NANO 2021; 15:5600-5609. [PMID: 33646761 DOI: 10.1021/acsnano.1c00657] [Citation(s) in RCA: 6] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
The synthesis of one-dimensional van der Waals heterostructures was realized recently, which offers alternative possibilities for prospective applications in electronics and optoelectronics. The even reduced dimension will enable different properties and further miniaturization beyond the capabilities of their two-dimensional counterparts. The natural doping results in p-type electrical characteristics for semiconducting single-walled carbon nanotubes and n-type for molybdenum disulfide with conventional noble metal contacts. Therefore, we demonstrate here a one-dimensional heterostructure nanotube, 11 nm wide, with the coaxial assembly of a semiconducting single-walled carbon nanotube, insulating boron nitride nanotube, and semiconducting molybdenum disulfide nanotube, which induces a radial semiconductor-insulator-semiconductor heterojunction. When opposite potential polarity was applied on a semiconducting single-walled carbon nanotube and molybdenum disulfide nanotube, respectively, the rectifying effect was materialized.
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Affiliation(s)
- Ya Feng
- Department of Mechanical Engineering, School of Engineering, The University of Tokyo, Tokyo 113-8656, Japan
| | - Henan Li
- Department of Mechanical Engineering, School of Engineering, The University of Tokyo, Tokyo 113-8656, Japan
| | - Taiki Inoue
- Department of Mechanical Engineering, School of Engineering, The University of Tokyo, Tokyo 113-8656, Japan
- Department of Applied Physics, Graduate School of Engineering, Osaka University, Osaka 565-0871, Japan
| | - Shohei Chiashi
- Department of Mechanical Engineering, School of Engineering, The University of Tokyo, Tokyo 113-8656, Japan
| | - Slava V Rotkin
- Department of Engineering Science and Mechanics, Materials Research Institute, The Pennsylvania State University, Millennium Science Complex, University Park, Pennsylvania 16802, United States
| | - Rong Xiang
- Department of Mechanical Engineering, School of Engineering, The University of Tokyo, Tokyo 113-8656, Japan
| | - Shigeo Maruyama
- Department of Mechanical Engineering, School of Engineering, The University of Tokyo, Tokyo 113-8656, Japan
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Affiliation(s)
- Rong Xiang
- Department of Mechanical Engineering The University of Tokyo Tokyo 113-8656 Japan
| | - Shigeo Maruyama
- Department of Mechanical Engineering The University of Tokyo Tokyo 113-8656 Japan
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