High-performance monolayer Na3Sb shrinking transistors: a DFT-NEGF study

Two-dimensional MoSi2As4-based field-effect transistors integrating switching and gas-sensing functions

Multifunctional nanoscale devices integrating multiple functions are of great importance for meeting the requirements of next-generation electronics. Herein, using first-principles calculations, we propose multifunctional devices based on the two-dimensional monolayer MoSi₂As₄, where a single-gate field-effect transistor (FET) and FET-type gas sensor are integrated. After introducing the optimizing strategies, such as underlap structures and dielectrics with a high dielectric constant (κ), we designed a 5 nm gate-length MoSi₂As₄ FET, whose performance fulfilled the key criteria of the International Technology Roadmap for Semiconductors (ITRS) for high-performance semiconductors. Under the joint adjustment of the underlap structure and high-κ dielectric material, the on/off ratio of the 5 nm gate-length FET reached up to 1.38 × 10⁴. In addition, driven by the high-performance FET, the MoSi₂As₄-based FET-type gas sensor showed a sensitivity of 38% for NH₃ and 46% for NO_2. Moreover, the weak interaction between NH₃ (NO₂) and MoSi₂As₄ favored the recycling of the sensor. Furthermore, the sensitivity of the sensor could be effectively improved by the gate voltage, and was increased up to 67% (74%) for NH₃ (NO₂). Our work provides theoretical guidance for the fabrication of multifunctional devices combining a high-performance FET and sensitive gas sensor.

Synthesis and Crystal Structure of the Zintl Phases NaSrSb, NaBaSb and NaEuSb

This work details the synthesis and the crystal structures of the ternary compounds NaSrSb, NaBaSb and NaEuSb. They are isostructural and adopt the hexagonal ZrNiAl-type structure (space group P6¯2m; Pearson code hP9). The structure determination in all three cases was performed using single-crystal X-ray diffraction methods. The structure features isolated Sb3- anions arranged in layers stacked along the crystallographic c-axis. In the interstices, alkali and alkaline-earth metal cations are found in tetrahedral and square pyramidal coordination environments, respectively. The formal partitioning of the valence electrons adheres to the valence rules, i.e., Na+Sr2+Sb3-, Na+Ba2+Sb3- and Na+Eu2+Sb3- can be considered as Zintl phases with intrinsic semiconductor behavior. Electronic band structure calculations conducted for NaBaSb are consistent with this notion and show a direct gap of approx. 0.9 eV. Additionally, the calculations hint at possible inverted Dirac cones, a feature that is reminiscent of topological quantum materials.

Promising ultra-short channel transistors based on OM2S (M = Ga, In) monolayers for high performance and low power consumption

It is hoped that two-dimensional (2D) semiconductors overcome the short channel effect and continue Moore's law. However, 2D material-based ultra-short channel devices still face the challenge of simultaneously achieving high-performance (HP) and low-power (LP) consumption. Here, we theoretically designed monolayer OM₂S (M = Ga, In)-based metal-oxide-semiconductor field-effect transistors (MOSFETs), considering the gate length from 1 to 5 nm, doping concentration and underlap structure. We found that in HP (LP) applications, the on-state current exceeds 1000 (500) μA μm^-1 under a 1 nm (2 nm) gate length, surpassing the needs of the International Technology Roadmap for Semiconductors (ITRS) in 2028. The subthreshold swing is close to the Boltzmann tyranny (60 mV dec^-1) even as the gate length shrinks to 2 nm. The energy-delay product is two orders lower than 1.02 × 10^-28 J s μm^-1, indicating extraordinary high-speed manipulation and low-energy expending. Therefore, monolayer OM₂S has great application in ultra-short scale devices with HP and LP consumption, and can be taken as a candidate to extend Moore's Law.

Phase transition and topological transistors based on monolayer Na3Bi nanoribbons

Recently, a topological-to-trivial insulator quantum-phase transition induced by an electric field has been experimentally reported in monolayer (ML) and bilayer (BL) Na₃Bi. A narrow ML/BL Na₃Bi nanoribbon is necessary to fabricate a high-performance topological transistor. By using the density functional theory method, we found that wider ML Na₃Bi nanoribbons (>7 nm) are topological insulators, featured by insulating bulk states and dissipationless metallic edge states. However, a bandgap is opened for extremely narrow ML Na₃Bi nanoribbons (<4 nm) due to the quantum confinement effect, and its size increases with the decrease in width. In the topological insulating ML Na₃Bi nanoribbons, a bandgap is opened in the metallic edge states under an external displacement electric field, with strength (∼1.0 V Å^-1) much smaller than the reopened displacement electric field in ML Na₃Bi (3 V Å^-1). An ultrashort ML Na₃Bi zigzag nanoribbon topological transistor switched by the electrical field was calculated using first-principles quantum transport simulation. It shows an on/off current/conductance ratio of 4-71 and a large on-state current of 1090 μA μm^-1. Therefore, a proof of the concept of topological transistors is presented.

Two-dimensional topological insulators exfoliated from Na3Bi-like Dirac semimetals

Topological insulation is widely predicted in two-dimensional (2D) materials realized by epitaxial growth or van der Waals (vdW) exfoliation. Such 2D topological insulators (TI's) host many interesting physical properties such as the quantum spin Hall effect and superconductivity. Here, we extend the search of 2D TI's into the exfoliatable non-vdW 2D crystals. We find that three-dimensional Dirac semimetals A3Bi (A = Na, K, Rb) (P3[combining macron]c1) can be exfoliated into 2D materials with exfoliation energies of 0.479-0.990 J m-2. Our careful examination of the topological invariants of exfoliated A3Bi monolayers/multilayers by using two well-established approaches reveals that bilayer and tetralayer Na3Bi are 2D TI's. It is found that the band gap of 2D TI's can be significantly increased by external strain. We further find that the predicted 2D TI's possess interesting hidden Rashba-like spin textures. Our results suggest a new arena to search for two-dimensional topological insulators and spintronic materials.