1
|
Ruiz MG, Castro A, Herranz J, da Silva A, John P, Trampert A, Brandt O, Geelhaar L, Lähnemann J. Composition and optical properties of (In, Ga)As nanowires grown by group-III-assisted molecular beam epitaxy. NANOTECHNOLOGY 2024; 35:265702. [PMID: 38527360 DOI: 10.1088/1361-6528/ad375b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/09/2023] [Accepted: 03/24/2024] [Indexed: 03/27/2024]
Abstract
(In, Ga) alloy droplets are used to catalyse the growth of (In, Ga)As nanowires by molecular beam epitaxy on Si(111) substrates. The composition, morphology and optical properties of these nanowires can be tuned by the employed elemental fluxes. To incorporate more than 10% of In, a high In/(In+Ga) flux ratio above 0.7 is required. We report a maximum In content of almost 30% in bulk (In, Ga)As nanowires for an In/(In+Ga) flux ratio of 0.8. However, with increasing In/(In+Ga) flux ratio, the nanowire length and diameter are notably reduced. Using photoluminescence and cathodoluminescence spectroscopy on nanowires covered by a passivating (In, Al)As shell, two luminescence bands are observed. A significant segment of the nanowires shows homogeneous emission, with a wavelength corresponding to the In content in this segment, while the consumption of the catalyst droplet leads to a spectrally-shifted emission band at the top of the nanowires. The (In,Ga)As nanowires studied in this work provide a new approach for the integration of infrared emitters on Si platforms.
Collapse
Affiliation(s)
- M Gómez Ruiz
- Paul-Drude-Institut für Festkörperelektronik, Leibniz-Institut im Forschungsverbund Berlin e.V., Hausvogteiplatz 5-7, D-10117 Berlin, Germany
| | - A Castro
- Paul-Drude-Institut für Festkörperelektronik, Leibniz-Institut im Forschungsverbund Berlin e.V., Hausvogteiplatz 5-7, D-10117 Berlin, Germany
| | - J Herranz
- Paul-Drude-Institut für Festkörperelektronik, Leibniz-Institut im Forschungsverbund Berlin e.V., Hausvogteiplatz 5-7, D-10117 Berlin, Germany
| | - A da Silva
- Paul-Drude-Institut für Festkörperelektronik, Leibniz-Institut im Forschungsverbund Berlin e.V., Hausvogteiplatz 5-7, D-10117 Berlin, Germany
| | - P John
- Paul-Drude-Institut für Festkörperelektronik, Leibniz-Institut im Forschungsverbund Berlin e.V., Hausvogteiplatz 5-7, D-10117 Berlin, Germany
| | - A Trampert
- Paul-Drude-Institut für Festkörperelektronik, Leibniz-Institut im Forschungsverbund Berlin e.V., Hausvogteiplatz 5-7, D-10117 Berlin, Germany
| | - O Brandt
- Paul-Drude-Institut für Festkörperelektronik, Leibniz-Institut im Forschungsverbund Berlin e.V., Hausvogteiplatz 5-7, D-10117 Berlin, Germany
| | - L Geelhaar
- Paul-Drude-Institut für Festkörperelektronik, Leibniz-Institut im Forschungsverbund Berlin e.V., Hausvogteiplatz 5-7, D-10117 Berlin, Germany
| | - J Lähnemann
- Paul-Drude-Institut für Festkörperelektronik, Leibniz-Institut im Forschungsverbund Berlin e.V., Hausvogteiplatz 5-7, D-10117 Berlin, Germany
| |
Collapse
|
2
|
Tong C, Delamarre A, De Lépinau R, Scaccabarozzi A, Oehler F, Harmand JC, Collin S, Cattoni A. GaAs/GaInP nanowire solar cell on Si with state-of-the-art Voc and quasi-Fermi level splitting. NANOSCALE 2022; 14:12722-12735. [PMID: 35997103 DOI: 10.1039/d2nr02652j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
With their unique structural, optical and electrical properties, III-V nanowires (NWs) are an extremely attractive option for the direct growth of III-Vs on Si for tandem solar cell applications. Here, we introduce a core-shell GaAs/GaInP NW solar cell grown by molecular beam epitaxy on a patterned Si substrate, and we present an in-depth investigation of its optoelectronic properties and limitations. We report a power conversion efficiency of almost 3.7%, and a state-of-the-art open-circuit voltage (VOC) for a NW array solar cell on Si of 0.65 V. We also present the first quantification of the quasi-Fermi level splitting in NW array solar cells using hyperspectral photoluminescence measurements. A value of 0.84 eV is obtained at 1 sun (1.01 eV at 81 suns), which is significantly higher than qVOC. It indicates NWs with a better intrinsic optoelectronic quality than what could be expected from TEM images or deduced from electrical measurements. Optical and electronic simulations provide insights into the main absorption and electrical losses, and guidelines to design and fabricate higher-efficiency devices. It suggests that improvements at the n-type contact (GaInP/ITO) are key to unlocking the potential of next generation NW solar cells.
Collapse
Affiliation(s)
- Capucine Tong
- Institut Photovoltaïque d'Ile-de-France (IPVF), Palaiseau F-91120, France.
- Centre de Nanosciences et de Nanotechnologies (C2N), CNRS, Université Paris-Saclay, F-91120 Palaiseau, France
| | - Amaury Delamarre
- Centre de Nanosciences et de Nanotechnologies (C2N), CNRS, Université Paris-Saclay, F-91120 Palaiseau, France
| | - Romaric De Lépinau
- Institut Photovoltaïque d'Ile-de-France (IPVF), Palaiseau F-91120, France.
- Centre de Nanosciences et de Nanotechnologies (C2N), CNRS, Université Paris-Saclay, F-91120 Palaiseau, France
| | - Andrea Scaccabarozzi
- Institut Photovoltaïque d'Ile-de-France (IPVF), Palaiseau F-91120, France.
- Centre de Nanosciences et de Nanotechnologies (C2N), CNRS, Université Paris-Saclay, F-91120 Palaiseau, France
| | - Fabrice Oehler
- Centre de Nanosciences et de Nanotechnologies (C2N), CNRS, Université Paris-Saclay, F-91120 Palaiseau, France
| | - Jean-Christophe Harmand
- Centre de Nanosciences et de Nanotechnologies (C2N), CNRS, Université Paris-Saclay, F-91120 Palaiseau, France
| | - Stéphane Collin
- Institut Photovoltaïque d'Ile-de-France (IPVF), Palaiseau F-91120, France.
- Centre de Nanosciences et de Nanotechnologies (C2N), CNRS, Université Paris-Saclay, F-91120 Palaiseau, France
| | - Andrea Cattoni
- Institut Photovoltaïque d'Ile-de-France (IPVF), Palaiseau F-91120, France.
- Centre de Nanosciences et de Nanotechnologies (C2N), CNRS, Université Paris-Saclay, F-91120 Palaiseau, France
| |
Collapse
|
3
|
Demontis V, Zannier V, Sorba L, Rossella F. Surface Nano-Patterning for the Bottom-Up Growth of III-V Semiconductor Nanowire Ordered Arrays. NANOMATERIALS (BASEL, SWITZERLAND) 2021; 11:2079. [PMID: 34443910 PMCID: PMC8398085 DOI: 10.3390/nano11082079] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 07/17/2021] [Revised: 08/07/2021] [Accepted: 08/10/2021] [Indexed: 12/18/2022]
Abstract
Ordered arrays of vertically aligned semiconductor nanowires are regarded as promising candidates for the realization of all-dielectric metamaterials, artificial electromagnetic materials, whose properties can be engineered to enable new functions and enhanced device performances with respect to naturally existing materials. In this review we account for the recent progresses in substrate nanopatterning methods, strategies and approaches that overall constitute the preliminary step towards the bottom-up growth of arrays of vertically aligned semiconductor nanowires with a controlled location, size and morphology of each nanowire. While we focus specifically on III-V semiconductor nanowires, several concepts, mechanisms and conclusions reported in the manuscript can be invoked and are valid also for different nanowire materials.
Collapse
Affiliation(s)
- Valeria Demontis
- NEST, Scuola Normale Superiore and Istituto Nanoscienze CNR, Piazza S. Silvestro 12, 56127 Pisa, Italy; (V.Z.); (L.S.)
| | - Valentina Zannier
- NEST, Scuola Normale Superiore and Istituto Nanoscienze CNR, Piazza S. Silvestro 12, 56127 Pisa, Italy; (V.Z.); (L.S.)
| | - Lucia Sorba
- NEST, Scuola Normale Superiore and Istituto Nanoscienze CNR, Piazza S. Silvestro 12, 56127 Pisa, Italy; (V.Z.); (L.S.)
| | - Francesco Rossella
- NEST, Scuola Normale Superiore and Istituto Nanoscienze CNR, Piazza S. Silvestro 12, 56127 Pisa, Italy; (V.Z.); (L.S.)
- Dipartimento di Scienze Fisiche, Informatiche e Matematiche, Università di Modena e Reggio Emilia, Via Campi 213/A, 41125 Modena, Italy
| |
Collapse
|
4
|
Goktas NI, Dubrovskii VG, LaPierre RR. Conformal Growth of Radial InGaAs Quantum Wells in GaAs Nanowires. J Phys Chem Lett 2021; 12:1275-1283. [PMID: 33497239 DOI: 10.1021/acs.jpclett.0c03712] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
GaAs-InGaAs-GaAs core-shell-shell nanowire (NW) structures were grown by gas source molecular beam epitaxy using the selective-area, self-assisted, vapor-liquid-solid method. The structural, morphological, and optical properties of the NWs were examined for different growth conditions of the InGaAs shell. With increasing In concentration of the InGaAs shell, the growth transitioned from preferential deposition at the NW base to the Stranski-Krastanov growth mode where InGaAs islands formed along the NW length. This trend is explained within a nucleation model where there is a critical In flux below which the conformal growth is suppressed and the shell forms only at the NW base. Low growth temperature produced a more uniform In distribution along the NW length but resulted in quenching of the photoluminescence (PL) emission. Alternatively, reducing the shell thickness and increasing the V/III flux ratio resulted in conformal InGaAs shell growth and quantum dot-like PL emission. Our results indicate a pathway toward the conditions for conformal InGaAs shell growth required for satisfactory optoelectronic performance.
Collapse
Affiliation(s)
- Nebile Isik Goktas
- Department of Engineering Physics, McMaster University, Hamilton, ON L8S 4L7, Canada
| | - Vladimir G Dubrovskii
- Department of Physics, St. Petersburg State University, Universitetskaya Emb. 13B, 199034 St. Petersburg, Russia
| | - Ray R LaPierre
- Department of Engineering Physics, McMaster University, Hamilton, ON L8S 4L7, Canada
| |
Collapse
|