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Bassi G, Kaur D, Dahiya R, Kumar M. 2D-3D heterostructure of PtS 2-x/Ga 2O 3and their band alignment studies for high performance and broadband photodetector. NANOTECHNOLOGY 2024; 35:325706. [PMID: 38710165 DOI: 10.1088/1361-6528/ad47c9] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/11/2024] [Accepted: 05/06/2024] [Indexed: 05/08/2024]
Abstract
For deep ultraviolet (UV-C) photodetectors, gallium oxide (Ga2O3) is a suitable candidate owing to its intrinsic ultra-wide band gap and high stability. However, its detection is limited within the UV-C region, which restricts it to cover a broad range, especially in visible and near-infrared (NIR) region. Therefore, constructing a heterostructure of Ga2O3with an appropriate material having a narrow band gap is a worthwhile approach to compensate for it. In this category, PtS2group-10 transitional metal dichalcogenide stands at the top owing to its narrow band gap (0.25-1.65 eV), high mobility, and stability for heterostructure synthesis. Moreover, heterostructure with Ga2O3sensing in UV and PtS2broad response in visible and IR range can broaden the spectrum from UV to NIR and to build broadband photodetector. In this work, we fabricated a 2D-3D PtS2-x/Ga2O3heterostructure based broadband photodetector with detection from UV-C to NIR region. In addition, the PtS2-x/Ga2O3device shows a high responsivity of 38.7 AW-1and detectivity of 4.8 × 1013Jones under 1100 nm light illumination at 5 V bias. A fast response of 90 ms/86 ms illustrates the device's fast speed. An interface study between the PtS2-xand Ga2O3was conducted using x-ray photoelectron spectroscopy and ultraviolet photoelectron spectroscopy (UPS) which confirmed type-I band alignment. Finally, based on their band alignment study, a carrier transport mechanism was proposed at the interface. This work offers a new opportunity to fabricate large-area high-performance 2D-3D heterostructures based photodetectors for future optoelectronics devices.
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Affiliation(s)
- Gaurav Bassi
- Functional and Renewable Energy Materials Laboratory, Department of Physics, Indian Institute of Technology Ropar, Rupnagar, Punjab-140001, India
| | - Damanpreet Kaur
- Functional and Renewable Energy Materials Laboratory, Department of Physics, Indian Institute of Technology Ropar, Rupnagar, Punjab-140001, India
| | - Rohit Dahiya
- Functional and Renewable Energy Materials Laboratory, Department of Physics, Indian Institute of Technology Ropar, Rupnagar, Punjab-140001, India
| | - Mukesh Kumar
- Functional and Renewable Energy Materials Laboratory, Department of Physics, Indian Institute of Technology Ropar, Rupnagar, Punjab-140001, India
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2
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Altvater M, Muratore C, Snure M, Glavin NR. Two-Step Conversion of Metal and Metal Oxide Precursor Films to 2D Transition Metal Dichalcogenides and Heterostructures. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024:e2400463. [PMID: 38733217 DOI: 10.1002/smll.202400463] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/19/2024] [Revised: 04/11/2024] [Indexed: 05/13/2024]
Abstract
The widely studied class of two-dimensional (2D) materials known as transition metal dichalcogenides (TMDs) are now well-poised to be employed in real-world applications ranging from electronic logic and memory devices to gas and biological sensors. Several scalable thin film synthesis techniques have demonstrated nanoscale control of TMD material thickness, morphology, structure, and chemistry and correlated these properties with high-performing, application-specific device metrics. In this review, the particularly versatile two-step conversion (2SC) method of TMD film synthesis is highlighted. The 2SC technique relies on deposition of a solid metal or metal oxide precursor material, followed by a reaction with a chalcogen vapor at an elevated temperature, converting the precursor film to a crystalline TMD. Herein, the variables at each step of the 2SC process including the impact of the precursor film material and deposition technique, the influence of gas composition and temperature during conversion, as well as other factors controlling high-quality 2D TMD synthesis are considered. The specific advantages of the 2SC approach including deposition on diverse substrates, low-temperature processing, orientation control, and heterostructure synthesis, among others, are featured. Finally, emergent opportunities that take advantage of the 2SC approach are discussed to include next-generation electronics, sensing, and optoelectronic devices, as well as catalysis for energy-related applications.
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Affiliation(s)
- Michael Altvater
- Air Force Research Laboratory, Materials and Manufacturing Directorate, WPAFB, OH, 45433, USA
- UES Inc., Dayton, OH, 45432, USA
| | - Christopher Muratore
- Department of Chemical and Materials Engineering, University of Dayton, Dayton, 45469, OH, USA
| | - Michael Snure
- Air Force Research Laboratory, Sensors Directorate, WPAFB, OH, 45433, USA
| | - Nicholas R Glavin
- Air Force Research Laboratory, Materials and Manufacturing Directorate, WPAFB, OH, 45433, USA
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Wang H, Zhang J, Su G, Lu J, Wan Y, Yu X, Yang P. The growth mechanism of PtS2 single crystal. J Chem Phys 2024; 160:134703. [PMID: 38577980 DOI: 10.1063/5.0201654] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/31/2024] [Accepted: 03/14/2024] [Indexed: 04/06/2024] Open
Abstract
PtS2, a member of the group 10 transition metal dichalcogenides (TMDs), has received extensive attention because of its excellent electrical properties and air stability. However, there are few reports on the preparation of single-crystal PtS2 in the literature, and the growth mechanism of single crystal PtS2 is not well elucidated. In this work, we proposed a method of preparation that combines magnetron sputtering and chemical vapor transport to obtain monocrystalline PtS2 on a SiO2/Si substrate. By controlling the growth temperature and time, we have synthesized a single crystalline PtS2 of hexagonal shape and size of 1-2 μm on a silicon substrate. Combining the molecular dynamics simulation, the growth mechanism of single crystal PtS2 was investigated both experimentally and theoretically. The synthesis method has a short production cycle and low cost, which opens the door for the fabrication of other TMDs single crystals.
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Affiliation(s)
- Huachao Wang
- National Center for International Research on Photoelectric and Energy Materials, Yunnan Key Laboratory for Micro/Nano Materials and Technology, School of Materials and Energy, Yunnan University, Kunming 650091, People's Republic of China
| | - Jisheng Zhang
- National Center for International Research on Photoelectric and Energy Materials, Yunnan Key Laboratory for Micro/Nano Materials and Technology, School of Materials and Energy, Yunnan University, Kunming 650091, People's Republic of China
| | - Guowen Su
- National Center for International Research on Photoelectric and Energy Materials, Yunnan Key Laboratory for Micro/Nano Materials and Technology, School of Materials and Energy, Yunnan University, Kunming 650091, People's Republic of China
| | - Jiangwei Lu
- Kunming Institute of Physics, Kunming 650223, People's Republic of China
| | - Yanfen Wan
- National Center for International Research on Photoelectric and Energy Materials, Yunnan Key Laboratory for Micro/Nano Materials and Technology, School of Materials and Energy, Yunnan University, Kunming 650091, People's Republic of China
| | - Xiaohua Yu
- Faculty of Materials Science and Engineering, Kunming University of Science and Technology, Kunming 650093, People's Republic of China
| | - Peng Yang
- National Center for International Research on Photoelectric and Energy Materials, Yunnan Key Laboratory for Micro/Nano Materials and Technology, School of Materials and Energy, Yunnan University, Kunming 650091, People's Republic of China
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4
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Ye Y, Shi Y, Cai J, Xiao Z, Li Z, Lin S. Mo 2C promoted electrocatalysis of the Pt/Mo 2C (C) heterostructure for a superior hydrogen evolution reaction. Dalton Trans 2023; 52:3682-3689. [PMID: 36848037 DOI: 10.1039/d2dt03822f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/11/2023]
Abstract
Constructing a unique electrochemical interface to enhance the catalytic capacity of Pt-based catalysts is indispensable for wider application of the hydrogen evolution reaction (HER). Herein, platinum-analogous molybdenum carbide (Mo2C) was combined with a lower content of Pt to construct the Pt/Mo2C (C) heterostructure via a solid-phase method, using ammonium molybdate as the precursor. Vulcan-C served as a support to promote the distribution of the Pt and Mo2C heterostructure, and cooperative effects between Pt and the Mo2C heterostructure contributed to the significantly improved catalytic capacity of Pt. The obtained Pt/Mo2C (C) exhibits superior HER activity and enhanced long-term durability in the acidic medium, with a low overpotential of 38 mV at 10 mA cm-2 and a low Tafel slope of 24 mV dec-1. In particular, a drastically enhanced amount of H2 production can be achieved (6837.28 mmol h-1 g-1). This facile approach not only provides a new pathway for constructing novel heterostructures but also gives an insight into the design of cost-effective Pt-based materials for an efficient HER.
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Affiliation(s)
- Yixiang Ye
- College of Chemistry & Materials Science, Fujian Normal University, Fuzhou 350007, China.
| | - Yuande Shi
- College of Chemistry & Materials Science, Fujian Normal University, Fuzhou 350007, China.
- Fujian Provincial Key Lab of Coastal Basin Environment (Fujian Polytechnic Normal University), Fuqing 350300, China
| | - Jiannan Cai
- College of Chemistry & Materials Science, Fujian Normal University, Fuzhou 350007, China.
- Fujian Provincial Key Lab of Coastal Basin Environment (Fujian Polytechnic Normal University), Fuqing 350300, China
| | - Zhisheng Xiao
- College of Chemistry & Materials Science, Fujian Normal University, Fuzhou 350007, China.
| | - Zhongshui Li
- College of Chemistry & Materials Science, Fujian Normal University, Fuzhou 350007, China.
- Fujian Provincial Key Lab of Coastal Basin Environment (Fujian Polytechnic Normal University), Fuqing 350300, China
- Fujian Key Laboratory of Polymer Materials, Fujian Normal University, Fuzhou 350007, China
- Fujian Provincial Key Laboratory of Advanced Materials Oriented Chemical Engineering, Fuzhou 350007, China
| | - Shen Lin
- College of Chemistry & Materials Science, Fujian Normal University, Fuzhou 350007, China.
- Fujian Key Laboratory of Polymer Materials, Fujian Normal University, Fuzhou 350007, China
- Fujian Provincial Key Laboratory of Advanced Materials Oriented Chemical Engineering, Fuzhou 350007, China
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5
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Li M, Wang Y, Li T, Zhang J, Wang X, Luo J, You M, Yang T, Deng Y, Yang H, Ke H. Albumin-templated platinum (II) sulfide nanodots for size-dependent cancer theranostics. Acta Biomater 2023; 155:564-574. [PMID: 36328127 DOI: 10.1016/j.actbio.2022.10.057] [Citation(s) in RCA: 5] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/01/2022] [Revised: 10/24/2022] [Accepted: 10/26/2022] [Indexed: 12/14/2022]
Abstract
Transition-metal chalcogenides, such as noble metal chalcogenides, hold tremendous potential as efficient agents for photo-induced cancer theranostics due to their unique physicochemical properties. However, a critical bottleneck still lies in exploring simple and controllable methods to synthesize noble metal chalcogenides especially PtS for in vivo photo-induced cancer imaging and simultaneous therapy. Herein, we proposed the albumin-templated synthesis of size-controllable platinum (II) sulfide nanodots (PtS-NDs) for multimodal cancer imaging and potent photothermal therapy. PtS-NDs were precisely synthesized with a tunable size ranging from 2.1 nm to 4.5 nm through a thermodynamically controlled growth inside albumin nanocages. PtS-NDs yielded significant near-infrared (NIR) absorbance and outstanding photothermal conversion under NIR laser irradiation, as well as effective resistance to photobleaching, thereby generating remarkable in vivo photoacoustic signals and distinct hyperthermia at tumor site. Moreover, these nanodots possessed efficient cellular uptake and tumor targeting capabilities in a size-dependent manner, thus leading to controllable diagnostic and thermo-therapeutic efficacy. Specifically, PtS-NDs with core diameter of 4.5 nm displayed preferable in vivo photoacoustic and CT imaging with high sensitivity, spatially and anatomically enhanced imaging contrast, together with hyperthermia mediated tumor ablation. Thus, the albumin-templated biomimetic synthesis provided an insightful strategy on fabricating theranostic PtS-NDs for potential clinical applications. STATEMENT OF SIGNIFICANCE: Noble metal chalcogenides especially PtS are of particular importance in the field of precise nanomedicine to improve both accuracy of cancer diagnosis and efficiency of tumor treatment. However, the intensively preclinical investigation of PtS was limited due to the lack of simple and controllable synthetic methods. Here, we report an albumin-templated biomineralization synthesis of platinum (II) sulfide nanodots (PtS-NDs). Specifically, albumin-templated biomineralization of PtS-NDs was induced by the electrostatic interactions between albumin and Pt2+, followed by the nucleation and growth inside the albumin nanocages. The resulting PtS-NDs showed good dispersibility and biosafety, as well as size-dependent photophysical properties and biological behaviors. Therefore, albumin-based biomineralization is a promising and safe strategy to facilely fabricate Pt-based chalcogenide for tumor theranostics.
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Affiliation(s)
- Ming Li
- Jiangsu Key Laboratory of Neuropsychiatric Diseases, and College of Pharmaceutical Sciences, Soochow University, Suzhou 215123, China
| | - Yuan Wang
- Jiangsu Key Laboratory of Neuropsychiatric Diseases, and College of Pharmaceutical Sciences, Soochow University, Suzhou 215123, China; Department of Ultrasound, Peking University Third Hospital, Beijing 100191, China
| | - Ting Li
- Jiangsu Key Laboratory of Neuropsychiatric Diseases, and College of Pharmaceutical Sciences, Soochow University, Suzhou 215123, China
| | - Juan Zhang
- Jiangsu Key Laboratory of Neuropsychiatric Diseases, and College of Pharmaceutical Sciences, Soochow University, Suzhou 215123, China
| | - Xue Wang
- Jiangsu Key Laboratory of Neuropsychiatric Diseases, and College of Pharmaceutical Sciences, Soochow University, Suzhou 215123, China
| | - Jie Luo
- Jiangsu Key Laboratory of Neuropsychiatric Diseases, and College of Pharmaceutical Sciences, Soochow University, Suzhou 215123, China
| | - Meng You
- Jiangsu Key Laboratory of Neuropsychiatric Diseases, and College of Pharmaceutical Sciences, Soochow University, Suzhou 215123, China
| | - Tao Yang
- Jiangsu Key Laboratory of Neuropsychiatric Diseases, and College of Pharmaceutical Sciences, Soochow University, Suzhou 215123, China
| | - Yibin Deng
- Jiangsu Key Laboratory of Neuropsychiatric Diseases, and College of Pharmaceutical Sciences, Soochow University, Suzhou 215123, China
| | - Hong Yang
- Jiangsu Key Laboratory of Neuropsychiatric Diseases, and College of Pharmaceutical Sciences, Soochow University, Suzhou 215123, China.
| | - Hengte Ke
- Jiangsu Key Laboratory of Neuropsychiatric Diseases, and College of Pharmaceutical Sciences, Soochow University, Suzhou 215123, China.
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Ultra-efficient and Selective Recovery of Au(III) Using Magnetic Fe3S4/Fe7S8. Sep Purif Technol 2022. [DOI: 10.1016/j.seppur.2022.122611] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/13/2022]
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7
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Wang Z, Zhang H, Wang W, Tan C, Chen J, Yin S, Zhang H, Zhu A, Li G, Du Y, Wang S, Liu F, Li L. Type-I Heterostructure Based on WS 2/PtS 2 for High-Performance Photodetectors. ACS APPLIED MATERIALS & INTERFACES 2022; 14:37926-37936. [PMID: 35961962 DOI: 10.1021/acsami.2c08827] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
van der Waals (vdW) heterodiodes composed of two-dimensional (2D) layered materials led to a new prospect in photoelectron diodes and photovoltaic devices. Existing studies have shown that Type-I heterostructures have great potential to be used as photodetectors; however, the tunneling phenomena in Type-I heterostructures have not been fully revealed. Herein, a highly efficient nn+ WS2/PtS2 Type-I vdW heterostructure photodiode is constructed. The device shows an ultrahigh reverse rectification ratio of 105 owing to the transmission barrier-induced low reverse current. A unilateral depletion region is formed on WS2, which inhibits the recombination of carriers at the interface and makes the external quantum efficiency (EQE) of the device reach 67%. Due to the tunneling mechanism of the device, which allows the co-existence of a large photocurrent and a low dark current, this device achieves a light on/off ratio of over 105. In addition, this band design allows the device to maintain a high detectivity of 4.53 × 1010 Jones. Our work provides some new ideas for exploring new high-efficiency photodiodes.
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Affiliation(s)
- Zihan Wang
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, P. R. China
| | - Hui Zhang
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, P. R. China
| | - Weike Wang
- Nanchang Institute of Technology, Nanchang 330044, P. R. China
| | - Chaoyang Tan
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, P. R. China
| | - Jiawang Chen
- Key Laboratory of Materials Physics, Anhui Key Laboratory of Nanomaterials and Nanotechnology, Institute of Solid State Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031, P. R. China
- University of Science and Technology of China, Hefei 230026, P. R. China
| | - Shiqi Yin
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, P. R. China
| | - Hanlin Zhang
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, P. R. China
| | - Ankang Zhu
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, P. R. China
| | - Gang Li
- Key Laboratory of Materials Physics, Anhui Key Laboratory of Nanomaterials and Nanotechnology, Institute of Solid State Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031, P. R. China
- University of Science and Technology of China, Hefei 230026, P. R. China
| | - Yuchen Du
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, P. R. China
| | - Shaotian Wang
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, P. R. China
| | - Fengguang Liu
- Hefei Innovation Research Institute, School of Microelectronics, Beihang University, Hefei 230013, P. R. China
| | - Liang Li
- Key Laboratory of Materials Physics, Anhui Key Laboratory of Nanomaterials and Nanotechnology, Institute of Solid State Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031, P. R. China
- University of Science and Technology of China, Hefei 230026, P. R. China
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8
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Ermolaev GA, Voronin KV, Tatmyshevskiy MK, Mazitov AB, Slavich AS, Yakubovsky DI, Tselin AP, Mironov MS, Romanov RI, Markeev AM, Kruglov IA, Novikov SM, Vyshnevyy AA, Arsenin AV, Volkov VS. Broadband Optical Properties of Atomically Thin PtS 2 and PtSe 2. NANOMATERIALS (BASEL, SWITZERLAND) 2021; 11:3269. [PMID: 34947618 PMCID: PMC8708229 DOI: 10.3390/nano11123269] [Citation(s) in RCA: 6] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 11/04/2021] [Revised: 11/21/2021] [Accepted: 11/29/2021] [Indexed: 01/31/2023]
Abstract
Noble transition metal dichalcogenides (TMDCs) such as PtS2 and PtSe2 show significant potential in a wide range of optoelectronic and photonic applications. Noble TMDCs, unlike standard TMDCs such as MoS2 and WS2, operate in the ultrawide spectral range from ultraviolet to mid-infrared wavelengths; however, their properties remain largely unexplored. Here, we measured the broadband (245-3300 nm) optical constants of ultrathin PtS2 and PtSe2 films to eliminate this gap and provide a foundation for optoelectronic device simulation. We discovered their broadband absorption and high refractive index both theoretically and experimentally. Based on first-principle calculations, we also predicted their giant out-of-plane optical anisotropy for monocrystals. As a practical illustration of the obtained optical properties, we demonstrated surface plasmon resonance biosensors with PtS2 or PtSe2 functional layers, which dramatically improves sensor sensitivity by 60 and 30%, respectively.
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Affiliation(s)
- Georgy A. Ermolaev
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, 141700 Dolgoprudny, Russia; (G.A.E.); (K.V.V.); (M.K.T.); (A.B.M.); (A.S.S.); (D.I.Y.); (A.P.T.); (M.S.M.); (A.M.M.); (I.A.K.); (S.M.N.); (A.A.V.); (A.V.A.)
| | - Kirill V. Voronin
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, 141700 Dolgoprudny, Russia; (G.A.E.); (K.V.V.); (M.K.T.); (A.B.M.); (A.S.S.); (D.I.Y.); (A.P.T.); (M.S.M.); (A.M.M.); (I.A.K.); (S.M.N.); (A.A.V.); (A.V.A.)
| | - Mikhail K. Tatmyshevskiy
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, 141700 Dolgoprudny, Russia; (G.A.E.); (K.V.V.); (M.K.T.); (A.B.M.); (A.S.S.); (D.I.Y.); (A.P.T.); (M.S.M.); (A.M.M.); (I.A.K.); (S.M.N.); (A.A.V.); (A.V.A.)
| | - Arslan B. Mazitov
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, 141700 Dolgoprudny, Russia; (G.A.E.); (K.V.V.); (M.K.T.); (A.B.M.); (A.S.S.); (D.I.Y.); (A.P.T.); (M.S.M.); (A.M.M.); (I.A.K.); (S.M.N.); (A.A.V.); (A.V.A.)
- Dukhov Research Institute of Automatics (VNIIA), 22 Suschevskaya St., 127055 Moscow, Russia
| | - Aleksandr S. Slavich
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, 141700 Dolgoprudny, Russia; (G.A.E.); (K.V.V.); (M.K.T.); (A.B.M.); (A.S.S.); (D.I.Y.); (A.P.T.); (M.S.M.); (A.M.M.); (I.A.K.); (S.M.N.); (A.A.V.); (A.V.A.)
| | - Dmitry I. Yakubovsky
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, 141700 Dolgoprudny, Russia; (G.A.E.); (K.V.V.); (M.K.T.); (A.B.M.); (A.S.S.); (D.I.Y.); (A.P.T.); (M.S.M.); (A.M.M.); (I.A.K.); (S.M.N.); (A.A.V.); (A.V.A.)
| | - Andrey P. Tselin
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, 141700 Dolgoprudny, Russia; (G.A.E.); (K.V.V.); (M.K.T.); (A.B.M.); (A.S.S.); (D.I.Y.); (A.P.T.); (M.S.M.); (A.M.M.); (I.A.K.); (S.M.N.); (A.A.V.); (A.V.A.)
| | - Mikhail S. Mironov
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, 141700 Dolgoprudny, Russia; (G.A.E.); (K.V.V.); (M.K.T.); (A.B.M.); (A.S.S.); (D.I.Y.); (A.P.T.); (M.S.M.); (A.M.M.); (I.A.K.); (S.M.N.); (A.A.V.); (A.V.A.)
| | - Roman I. Romanov
- Moscow Engineering Physics Institute, National Research Nuclear University MEPhI, 31 Kashirskoe Sh., 115409 Moscow, Russia;
| | - Andrey M. Markeev
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, 141700 Dolgoprudny, Russia; (G.A.E.); (K.V.V.); (M.K.T.); (A.B.M.); (A.S.S.); (D.I.Y.); (A.P.T.); (M.S.M.); (A.M.M.); (I.A.K.); (S.M.N.); (A.A.V.); (A.V.A.)
| | - Ivan A. Kruglov
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, 141700 Dolgoprudny, Russia; (G.A.E.); (K.V.V.); (M.K.T.); (A.B.M.); (A.S.S.); (D.I.Y.); (A.P.T.); (M.S.M.); (A.M.M.); (I.A.K.); (S.M.N.); (A.A.V.); (A.V.A.)
- Dukhov Research Institute of Automatics (VNIIA), 22 Suschevskaya St., 127055 Moscow, Russia
| | - Sergey M. Novikov
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, 141700 Dolgoprudny, Russia; (G.A.E.); (K.V.V.); (M.K.T.); (A.B.M.); (A.S.S.); (D.I.Y.); (A.P.T.); (M.S.M.); (A.M.M.); (I.A.K.); (S.M.N.); (A.A.V.); (A.V.A.)
| | - Andrey A. Vyshnevyy
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, 141700 Dolgoprudny, Russia; (G.A.E.); (K.V.V.); (M.K.T.); (A.B.M.); (A.S.S.); (D.I.Y.); (A.P.T.); (M.S.M.); (A.M.M.); (I.A.K.); (S.M.N.); (A.A.V.); (A.V.A.)
| | - Aleksey V. Arsenin
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, 141700 Dolgoprudny, Russia; (G.A.E.); (K.V.V.); (M.K.T.); (A.B.M.); (A.S.S.); (D.I.Y.); (A.P.T.); (M.S.M.); (A.M.M.); (I.A.K.); (S.M.N.); (A.A.V.); (A.V.A.)
- GrapheneTek, Skolkovo Innovation Center, 143026 Moscow, Russia
| | - Valentyn S. Volkov
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, 141700 Dolgoprudny, Russia; (G.A.E.); (K.V.V.); (M.K.T.); (A.B.M.); (A.S.S.); (D.I.Y.); (A.P.T.); (M.S.M.); (A.M.M.); (I.A.K.); (S.M.N.); (A.A.V.); (A.V.A.)
- GrapheneTek, Skolkovo Innovation Center, 143026 Moscow, Russia
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