Bartlett PN, de Groot CHK, Greenacre VK, Huang R, Noori YJ, Reid G, Thomas S. Molecular precursors for the electrodeposition of 2D-layered metal chalcogenides.
Nat Rev Chem 2025;
9:88-101. [PMID:
39775527 DOI:
10.1038/s41570-024-00671-6]
[Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Accepted: 10/18/2024] [Indexed: 01/11/2025]
Abstract
Two-dimensional transition metal dichalcogenides (TMDCs) are highly anisotropic, layered semiconductors, with the general formula ME2 (M = metal, E = sulfur, selenium or tellurium). Much current research in this field focusses on TMDCs for catalysis and energy applications; they are also attracting great interest for next-generation transistor and optoelectronic devices. The latter high-tech applications place stringent requirements on the stoichiometry, crystallinity, morphology and electronic properties of monolayer and few-layer materials. As a solution-based process, wherein the material grows specifically on the electrode surface, electrodeposition offers great promise as a readily scalable, area-selective growth process. This Review explores the state-of-the-art for TMDC electrodeposition, highlighting how the choice of precursor (or precursors), solvent and electrode designs, with novel 'device-ready' electrode geometries, influence their morphologies and properties, thus enabling the direct growth of ultrathin, highly anisotropic 2D TMDCs and much scope for future advances.
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