High broadband photoconductivity of few-layered MoS2 field-effect transistors measured using multi-terminal methods: effects of contact resistance

A wafer-scale synthesis of monolayer MoS2 and their field-effect transistors toward practical applications

Molybdenum disulfide (MoS2) has attracted considerable research interest as a promising candidate for downscaling integrated electronics due to the special two-dimensional structure and unique physicochemical properties. However, it is still challenging to achieve large-area MoS2 monolayers with desired material quality and electrical properties to fulfill the requirement for practical applications. Recently, a variety of investigations have focused on wafer-scale monolayer MoS2 synthesis with high-quality. The 2D MoS2 field-effect transistor (MoS2-FET) array with different configurations utilizes the high-quality MoS2 film as channels and exhibits favorable performance. In this review, we illustrated the latest research advances in wafer-scale monolayer MoS2 synthesis by different methods, including Au-assisted exfoliation, CVD, thin film sulfurization, MOCVD, ALD, VLS method, and the thermolysis of thiosalts. Then, an overview of MoS2-FET developments was provided based on large-area MoS2 film with different device configurations and performances. The different applications of MoS2-FET in logic circuits, basic memory devices, and integrated photodetectors were also summarized. Lastly, we considered the perspective and challenges based on wafer-scale monolayer MoS2 synthesis and MoS2-FET for developing practical applications in next-generation integrated electronics and flexible optoelectronics.

An In Situ Reflectance Spectroscopic Investigation to Monitor Two-Dimensional MoS2 Flakes on a Sapphire Substrate

In this work, we demonstrate the application of differential reflectance spectroscopy (DRS) to monitor the growth of molybdenum disulfide (MoS₂) using chemical vapor deposition (CVD). The growth process, optical properties, and structure evolution of MoS₂ were recorded by in-situ DRS. Indeed, blue shifts of the characteristic peak B were discussed with the decrease of temperature. We also obtained the imaginary part of the MoS₂ dielectric constant according to reflectance spectra. This method provides an approach for studying the change of two-dimensional (2D) materials’ dielectric constant with temperature. More importantly, our work emphasizes that the DRS technique is a non-destructive and effective method for in-situ monitoring the growth of 2D materials, which is helpful in guiding the preparation of 2D materials.