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Xing Z, Liu Y, Wu N, Wang S, Zhang X. Prediction of high thermal rectification behavior in carbon/C 3N heteronanotubes based on nonequilibrium molecular dynamics simulations. Phys Chem Chem Phys 2024; 26:21727-21738. [PMID: 39099465 DOI: 10.1039/d4cp01890g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 08/06/2024]
Abstract
Carbon/C3N heteronanotubes (CC3NNTs) have garnered significant interest for their distinctive performance and versatility across various applications. However, the understanding of interfacial heat transport within these heterostructures remains limited. This study aims to enrich the field by constructing models of CC3NNTs through the bonding of CNTs and C3NNTs, and employs nonequilibrium molecular dynamics (NEMD) simulations to predict their heat flux and thermal rectification (TR) effects. Placing the heat source in the CNT region induces a stronger heat flux compared to the C3NNT region, thus demonstrating a pronounced TR effect. This effect can be attributed to the mismatch in phonon spectra, as evidenced by the cumulative correlation factor derived from the phonon density of states (phonon DOS). Using this approach, we predict that the TR ratio for zigzag CC3NNTs (ZCC3NNT) significantly exceeds that of armchair CC3NNTs (ACC3NNT). Notably, in contrast to ACC3NNT, ZCC3NNT exhibits the phenomenon of negative differential thermal resistance in the backward heat flux with a temperature difference of Δ = 120 K. This phenomenon can be attributed to a lower phonon participation ratio at Δ = 120 K compared to other values of Δ. Subsequently, given that ZCC3NNT demonstrates the most pronounced TR ratio at room temperature, we explored how stress-strain, system size, defect density, and interface position impact the TR ratio. These insights are invaluable for guiding the design of thermal rectifiers, smart thermal management systems, and microelectronic processor coolers.
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Affiliation(s)
- Zhibo Xing
- Department of Power Engineering, School of Energy and Power Engineering, North China Electric Power University, Baoding 071003, China.
| | - Yingguang Liu
- Department of Power Engineering, School of Energy and Power Engineering, North China Electric Power University, Baoding 071003, China.
- Hebei Key Laboratory of Low Carbon and High Efficiency Power Generation Technology, North China Electric Power University, Baoding 071003, Hebei, China
| | - Ning Wu
- Department of Power Engineering, School of Energy and Power Engineering, North China Electric Power University, Baoding 071003, China.
| | - Shuo Wang
- Department of Power Engineering, School of Energy and Power Engineering, North China Electric Power University, Baoding 071003, China.
| | - Xutao Zhang
- Department of Power Engineering, School of Energy and Power Engineering, North China Electric Power University, Baoding 071003, China.
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2
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Wu N, Liu Y, Xing Z, Wang S, Zhang C. One-Dimensional van der Waals Heterojunction Comprising Carbon Nanotube Half-Wrapped in Boron Nitride Nanotube: Deep Investigation of Thermal Rectification. J Phys Chem B 2024; 128:6892-6906. [PMID: 38956953 DOI: 10.1021/acs.jpcb.4c01171] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 07/04/2024]
Abstract
One-dimensional van der Waals (vdWs) heterostructures are celebrated for their exceptional thermal management capabilities, garnering significant research interest. Consequently, our research focused on the one-dimensional vdWs heterojunction comprising carbon nanotube half-wrapped in boron nitride nanotube (BNCNT), specifically their thermal rectification (TR) properties. We employed non-equilibrium molecular dynamics to explore the TR mechanism and assess the impacts of temperature, strain, and coupling strength on heat flux and TR ratio. Our findings reveal that the backward heat flux demonstrates greater atomic vibration instability, as indicated by mean square displacement (MSD), compared to forward heat flux. This instability leads to a higher concentration of localized phonons, thereby diminishing the backward heat flux and enhancing TR. Additionally, we utilized MSD to shed light on the negative differential thermal resistance phenomenon and the influence of stress on forward and backward heat fluxes. Remarkably, TR ratios reached 344% at 3% strain and 400% at -1% strain. Calculations of phonon density of states revealed a competitive mechanism between in-plane and out-of-plane phonons coupling in the inner carbon nanotube and an overlap degree of out-of-plane phonon spectra between the inner carbon nanotube and outer boron nitride nanotube. This accounts for the differing trends in forward and backward heat fluxes as coupling strength χ increases, with TR ratios exceeding 1000% at χ = 7.5. This study provides vital insights for advancing one-dimensional vdWs thermal rectifiers.
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Affiliation(s)
- Ning Wu
- Department of Power Engineering, School of Energy and Power Engineering, North China Electric Power University, Baoding 071003, Hebei, China
| | - Yingguang Liu
- Department of Power Engineering, School of Energy and Power Engineering, North China Electric Power University, Baoding 071003, Hebei, China
- Hebei Key Laboratory of Low Carbon and High Efficiency Power Generation Technology, North China Electric Power University, Baoding 071003, Hebei, China
| | - Zhibo Xing
- Department of Power Engineering, School of Energy and Power Engineering, North China Electric Power University, Baoding 071003, Hebei, China
| | - Shuo Wang
- Department of Power Engineering, School of Energy and Power Engineering, North China Electric Power University, Baoding 071003, Hebei, China
| | - Cheng Zhang
- Department of Power Engineering, School of Energy and Power Engineering, North China Electric Power University, Baoding 071003, Hebei, China
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3
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Khan MK, Raza M, Shahbaz M, Hussain I, Khan MF, Xie Z, Shah SSA, Tareen AK, Bashir Z, Khan K. The recent advances in the approach of artificial intelligence (AI) towards drug discovery. Front Chem 2024; 12:1408740. [PMID: 38882215 PMCID: PMC11176507 DOI: 10.3389/fchem.2024.1408740] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/29/2024] [Accepted: 04/26/2024] [Indexed: 06/18/2024] Open
Abstract
Artificial intelligence (AI) has recently emerged as a unique developmental influence that is playing an important role in the development of medicine. The AI medium is showing the potential in unprecedented advancements in truth and efficiency. The intersection of AI has the potential to revolutionize drug discovery. However, AI also has limitations and experts should be aware of these data access and ethical issues. The use of AI techniques for drug discovery applications has increased considerably over the past few years, including combinatorial QSAR and QSPR, virtual screening, and denovo drug design. The purpose of this survey is to give a general overview of drug discovery based on artificial intelligence, and associated applications. We also highlighted the gaps present in the traditional method for drug designing. In addition, potential strategies and approaches to overcome current challenges are discussed to address the constraints of AI within this field. We hope that this survey plays a comprehensive role in understanding the potential of AI in drug discovery.
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Affiliation(s)
- Mahroza Kanwal Khan
- College of Chemistry and Environmental Engineering, Shenzhen University, Shenzhen, China
| | - Mohsin Raza
- Additive Manufacturing Institute, Shenzhen University, Shenzhen, China
| | - Muhammad Shahbaz
- Additive Manufacturing Institute, Shenzhen University, Shenzhen, China
| | - Iftikhar Hussain
- Department of Mechanical Engineering, City University of Hong Kong, Kowloon, Hong Kong SAR, China
- A. J. Drexel Nanomaterials Institute and Department of Materials Science and Engineering, Drexel University, Philadelphia, PA, United States
| | - Muhammad Farooq Khan
- Department of Electrical Engineering, Sejong University, Seoul, Republic of Korea
| | - Zhongjian Xie
- Shenzhen Children's Hospital, Clinical Medical College of Southern University of Science and Technology, Shenzhen, China
| | - Syed Shoaib Ahmad Shah
- Department of Chemistry, School of Natural Sciences, National University of Sciences and Technology, Islamabad, Pakistan
| | - Ayesha Khan Tareen
- School of Mechanical Engineering, Dongguan University of Technology, Dongguan, China
| | - Zoobia Bashir
- College of Chemistry and Environmental Engineering, Shenzhen University, Shenzhen, China
| | - Karim Khan
- Additive Manufacturing Institute, Shenzhen University, Shenzhen, China
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Murastov G, Aslam MA, Leitner S, Tkachuk V, Plutnarová I, Pavlica E, Rodriguez RD, Sofer Z, Matković A. Multi-Layer Palladium Diselenide as a Contact Material for Two-Dimensional Tungsten Diselenide Field-Effect Transistors. NANOMATERIALS (BASEL, SWITZERLAND) 2024; 14:481. [PMID: 38470809 DOI: 10.3390/nano14050481] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/15/2024] [Revised: 02/28/2024] [Accepted: 03/01/2024] [Indexed: 03/14/2024]
Abstract
Tungsten diselenide (WSe2) has emerged as a promising ambipolar semiconductor material for field-effect transistors (FETs) due to its unique electronic properties, including a sizeable band gap, high carrier mobility, and remarkable on-off ratio. However, engineering the contacts to WSe2 remains an issue, and high contact barriers prevent the utilization of the full performance in electronic applications. Furthermore, it could be possible to tune the contacts to WSe2 for effective electron or hole injection and consequently pin the threshold voltage to either conduction or valence band. This would be the way to achieve complementary metal-oxide-semiconductor devices without doping of the channel material.This study investigates the behaviour of two-dimensional WSe2 field-effect transistors with multi-layer palladium diselenide (PdSe2) as a contact material. We demonstrate that PdSe2 contacts favour hole injection while preserving the ambipolar nature of the channel material. This consequently yields high-performance p-type WSe2 devices with PdSe2 van der Waals contacts. Further, we explore the tunability of the contact interface by selective laser alteration of the WSe2 under the contacts, enabling pinning of the threshold voltage to the valence band of WSe2, yielding pure p-type operation of the devices.
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Affiliation(s)
- Gennadiy Murastov
- Department Physics, Mechanics and Electrical Engineering, Montanuniversität Leoben, Franz Josef Strasse 18, 8700 Leoben, Austria
| | - Muhammad Awais Aslam
- Department Physics, Mechanics and Electrical Engineering, Montanuniversität Leoben, Franz Josef Strasse 18, 8700 Leoben, Austria
| | - Simon Leitner
- Department Physics, Mechanics and Electrical Engineering, Montanuniversität Leoben, Franz Josef Strasse 18, 8700 Leoben, Austria
| | - Vadym Tkachuk
- Laboratory of Organic Matter Physics, University of Nova Gorica, Vipavska 13, SI-5000 Nova Gorica, Slovenia
| | - Iva Plutnarová
- Department of Inorganic Chemistry, University of Chemistry and Technology Prague, Technická 5, 166 28 Prague, Czech Republic
| | - Egon Pavlica
- Laboratory of Organic Matter Physics, University of Nova Gorica, Vipavska 13, SI-5000 Nova Gorica, Slovenia
| | - Raul D Rodriguez
- Research School of Chemistry & Applied Biomedical Sciences, Tomsk Polytechnic University, Lenina ave. 30, 634034 Tomsk, Russia
| | - Zdenek Sofer
- Department of Inorganic Chemistry, University of Chemistry and Technology Prague, Technická 5, 166 28 Prague, Czech Republic
| | - Aleksandar Matković
- Department Physics, Mechanics and Electrical Engineering, Montanuniversität Leoben, Franz Josef Strasse 18, 8700 Leoben, Austria
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Nguyen TTH, Nguyen CM, Huynh MA, Vu HH, Nguyen TK, Nguyen NT. Field effect transistor based wearable biosensors for healthcare monitoring. J Nanobiotechnology 2023; 21:411. [PMID: 37936115 PMCID: PMC10629051 DOI: 10.1186/s12951-023-02153-1] [Citation(s) in RCA: 6] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/19/2023] [Accepted: 10/09/2023] [Indexed: 11/09/2023] Open
Abstract
The rapid advancement of wearable biosensors has revolutionized healthcare monitoring by screening in a non-invasive and continuous manner. Among various sensing techniques, field-effect transistor (FET)-based wearable biosensors attract increasing attention due to their advantages such as label-free detection, fast response, easy operation, and capability of integration. This review explores the innovative developments and applications of FET-based wearable biosensors for healthcare monitoring. Beginning with an introduction to the significance of wearable biosensors, the paper gives an overview of structural and operational principles of FETs, providing insights into their diverse classifications. Next, the paper discusses the fabrication methods, semiconductor surface modification techniques and gate surface functionalization strategies. This background lays the foundation for exploring specific FET-based biosensor designs, including enzyme, antibody and nanobody, aptamer, as well as ion-sensitive membrane sensors. Subsequently, the paper investigates the incorporation of FET-based biosensors in monitoring biomarkers present in physiological fluids such as sweat, tears, saliva, and skin interstitial fluid (ISF). Finally, we address challenges, technical issues, and opportunities related to FET-based biosensor applications. This comprehensive review underscores the transformative potential of FET-based wearable biosensors in healthcare monitoring. By offering a multidimensional perspective on device design, fabrication, functionalization and applications, this paper aims to serve as a valuable resource for researchers in the field of biosensing technology and personalized healthcare.
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Affiliation(s)
- Thi Thanh-Ha Nguyen
- Queensland Micro- and Nanotechnology Centre, Griffith University, Nathan, QLD, 4111, Australia
- School of Engineering and Built Environment, Griffith University, Nathan, QLD, 4111, Australia
| | - Cong Minh Nguyen
- Queensland Micro- and Nanotechnology Centre, Griffith University, Nathan, QLD, 4111, Australia
- School of Environment and Science (ESC), Griffith University, Nathan, QLD, 4111, Australia
| | - Minh Anh Huynh
- Queensland Micro- and Nanotechnology Centre, Griffith University, Nathan, QLD, 4111, Australia
- School of Engineering and Built Environment, Griffith University, Nathan, QLD, 4111, Australia
| | - Hoang Huy Vu
- Queensland Micro- and Nanotechnology Centre, Griffith University, Nathan, QLD, 4111, Australia
- School of Engineering and Built Environment, Griffith University, Nathan, QLD, 4111, Australia
| | - Tuan-Khoa Nguyen
- Queensland Micro- and Nanotechnology Centre, Griffith University, Nathan, QLD, 4111, Australia
| | - Nam-Trung Nguyen
- Queensland Micro- and Nanotechnology Centre, Griffith University, Nathan, QLD, 4111, Australia.
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Sangolkar AA, Kadiyam RK, Faizan M, Chedupaka O, Mucherla R, Pawar R. Electronic and photophysical properties of an atomically thin bowl-shaped beryllene encapsulated inside the cavity of [6]cycloparaphenylene (Be n@[6]CPP). Phys Chem Chem Phys 2023; 25:23262-23276. [PMID: 37608746 DOI: 10.1039/d3cp01952g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 08/24/2023]
Abstract
Exotic metallic nanostructures are being intensely pursued for a myriad of applications, with ultrathin membranes currently at the heart of several investigations. The objective of the present study was to systematically assess the atom-by-atom encapsulation of Be in the molecular nanoring of [6]cycloparaphenylene ([6]CPP). Further, the study aimed to scrutinize the structure, stability, and properties of the encapsulated Ben@[6]CPP systems. The outcomes clearly revealed that [6]CPP enabled the cooperative confinement of atomically thin bowl-shaped beryllene inside its circular cavity. The confinement of Be in [6]CPP generated topologically anisotropic surfaces with distinct interior and exterior charge distributions. The Ben@[6]CPP complexes could render a cationic or anionic nature to Be depending on its neighbouring environment. Thus, the systems may offer a promising opportunity for the synergistic co-adsorption of multiple reactants that are involved in multicomponent reactions. Energy decomposition analysis (EDA) elucidated that the bonding between Be and [6]CPP was partially ionic and covalent in character. The progressive encapsulation of Be atoms inside the cavity of [6]CPP led to a red-shift of the excitation wavelength to the visible region. The calculated optical absorption coefficient was higher than 104 L mol-1 cm-1, which shows promise for diverse optoelectronic applications.
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Affiliation(s)
- Akanksha Ashok Sangolkar
- Laboratory of Advanced Computation and Theory for Materials and Chemistry, Department of Chemistry, National Institute of Technology Warangal (NITW), Warangal, Telangana-506004, India.
| | - Rama Krishna Kadiyam
- Laboratory of Advanced Computation and Theory for Materials and Chemistry, Department of Chemistry, National Institute of Technology Warangal (NITW), Warangal, Telangana-506004, India.
| | - Mohmmad Faizan
- Laboratory of Advanced Computation and Theory for Materials and Chemistry, Department of Chemistry, National Institute of Technology Warangal (NITW), Warangal, Telangana-506004, India.
| | - Omshireesh Chedupaka
- Laboratory of Advanced Computation and Theory for Materials and Chemistry, Department of Chemistry, National Institute of Technology Warangal (NITW), Warangal, Telangana-506004, India.
| | - Raghasudha Mucherla
- Laboratory of Advanced Computation and Theory for Materials and Chemistry, Department of Chemistry, National Institute of Technology Warangal (NITW), Warangal, Telangana-506004, India.
| | - Ravinder Pawar
- Laboratory of Advanced Computation and Theory for Materials and Chemistry, Department of Chemistry, National Institute of Technology Warangal (NITW), Warangal, Telangana-506004, India.
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Ali W, Liu Y, Huang M, Xie Y, Li Z. Temperature-Dependent Phonon Scattering and Photoluminescence in Vertical MoS 2/WSe 2 Heterostructures. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:2349. [PMID: 37630934 PMCID: PMC10459064 DOI: 10.3390/nano13162349] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/22/2023] [Revised: 08/08/2023] [Accepted: 08/09/2023] [Indexed: 08/27/2023]
Abstract
Transition metal dichalcogenide (TMD) monolayers and their heterostructures have attracted considerable attention due to their distinct properties. In this work, we performed a systematic investigation of MoS2/WSe2 heterostructures, focusing on their temperature-dependent Raman and photoluminescence (PL) characteristics in the range of 79 to 473 K. Our Raman analysis revealed that both the longitudinal and transverse modes of the heterostructure exhibit linear shifts towards low frequencies with increasing temperatures. The peak position and intensity of PL spectra also showed pronounced temperature dependency. The activation energy of thermal-quenching-induced PL emissions was estimated as 61.5 meV and 82.6 meV for WSe2 and MoS2, respectively. Additionally, we observed that the spectral full width at half maximum (FWHM) of Raman and PL peaks increases as the temperature increases, and these broadenings can be attributed to the phonon interaction and the expansion of the heterostructure's thermal coefficients. This work provides valuable insights into the interlayer coupling of van der Waals heterostructures, which is essential for understanding their potential applications in extreme temperatures.
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Affiliation(s)
- Wajid Ali
- Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, Hunan University, Changsha 410082, China; (W.A.)
| | - Ye Liu
- Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, Hunan University, Changsha 410082, China; (W.A.)
| | - Ming Huang
- Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, Hunan University, Changsha 410082, China; (W.A.)
| | - Yunfei Xie
- Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, Hunan University, Changsha 410082, China; (W.A.)
| | - Ziwei Li
- Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, Hunan University, Changsha 410082, China; (W.A.)
- Wuhan National Laboratory for Optoelectronics, School of Physics, Huazhong University of Science and Technology, Wuhan 430074, China
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Tan X, Wang S, Zhang Q, He J, Chen S, Qu Y, Liu Z, Tang Y, Liu X, Wang C, Wang Q, Liu Q. Laser doping of 2D material for precise energy band design. NANOSCALE 2023. [PMID: 37161768 DOI: 10.1039/d3nr00808h] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/11/2023]
Abstract
The number of excellent 2D materials is finite for nano optoelectric devices including transistors, diodes, sensors, and so forth, thus the modulation of 2D materials is important to improve the performance of the current eligible 2D materials, and even to transform unqualified 2D materials into eligible 2D materials. Here we develop a fine laser doping strategy based on highly controllable laser direct writing, and investigate its effectivity and practicability by doping multilayer molybdenum ditelluride (MoTe2). Power-gradient laser doping and patterned laser doping, for the first time, are presented for designable and fine doping of 2D materials. The laser-induced polar transition of MoTe2 indicates good controllability of the method for the carrier concentration distribution in MoTe2. Multiple devices with finely tuned energy band structures are demonstrated by means of power-gradient laser doping and patterned laser doping, further illustrating the design capability of a precise energy band in 2D materials.
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Affiliation(s)
- Xiang Tan
- CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology & University of Chinese Academy of Sciences, Beijing 100190, China.
- Zhenjiang key laboratory of advanced sensing materials and devices, Jiangsu University, Zhenjiang 212013, PR China
| | - Shu Wang
- CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology & University of Chinese Academy of Sciences, Beijing 100190, China.
| | - Qiaoxuan Zhang
- Hebei University of Water Resources and Electric Engineering Electrical Automation Department, 061001, Cangzhou, Hebei, China
| | - Juxing He
- CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology & University of Chinese Academy of Sciences, Beijing 100190, China.
| | - Shengyao Chen
- CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology & University of Chinese Academy of Sciences, Beijing 100190, China.
- MOE Key Laboratory of Weak-Light Nonlinear Photonics, TEDA Applied Physics Institute, School of Physics, Nankai University, Tianjin 300457, China
| | - Yusong Qu
- CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology & University of Chinese Academy of Sciences, Beijing 100190, China.
| | - Zhenzhou Liu
- CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology & University of Chinese Academy of Sciences, Beijing 100190, China.
- School of Physical Science and Technology, Inner Mongolia University, Inner Mongolia 010000, China
| | - Yong Tang
- Hebei University of Water Resources and Electric Engineering Electrical Automation Department, 061001, Cangzhou, Hebei, China
| | - Xintong Liu
- Hebei University of Water Resources and Electric Engineering Electrical Automation Department, 061001, Cangzhou, Hebei, China
| | - Cong Wang
- College of Mathematics and Physics, Beijing University of Chemical Technology, Beijing, 100029, China
| | - Quan Wang
- Zhenjiang key laboratory of advanced sensing materials and devices, Jiangsu University, Zhenjiang 212013, PR China
| | - Qian Liu
- CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology & University of Chinese Academy of Sciences, Beijing 100190, China.
- MOE Key Laboratory of Weak-Light Nonlinear Photonics, TEDA Applied Physics Institute, School of Physics, Nankai University, Tianjin 300457, China
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Khan K, Tareen AK, Iqbal M, Ye Z, Xie Z, Mahmood A, Mahmood N, Zhang H. Recent Progress in Emerging Novel MXenes Based Materials and their Fascinating Sensing Applications. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2206147. [PMID: 36755364 DOI: 10.1002/smll.202206147] [Citation(s) in RCA: 7] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/06/2022] [Revised: 11/28/2022] [Indexed: 05/11/2023]
Abstract
Early transition metals based 2D carbides, nitrides and carbonitrides nanomaterials are known as MXenes, a novel and extensive new class of 2D materials family. Since the first accidently synthesis based discovery of Ti3 C2 in 2011, more than 50 additional compositions have been experimentally reported, including at least eight distinct synthesis methods and also more than 100 stoichiometries are theoretically studied. Due to its distinctive surface chemistry, graphene like shape, metallic conductivity, high hydrophilicity, outstanding mechanical and thermal properties, redox capacity and affordable with mass-produced nature, this diverse MXenes are of tremendous scientific and technological significance. In this review, first we'll come across the MXene based nanomaterials possible synthesis methods, their advantages, limitations and future suggestions, new chemistry related to their selected properties and potential sensing applications, which will help us to explain why this family is growing very fast as compared to other 2D families. Secondly, problems that help to further improve commercialization of the MXene nanomaterials based sensors are examined, and many advances in the commercializing of the MXene nanomaterials based sensors are proposed. At the end, we'll go through the current challenges, limitations and future suggestions.
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Affiliation(s)
- Karim Khan
- School of Electrical Engineering & Intelligentization, Dongguan University of Technology, Dongguan, 523808, China
- Shenzhen Nuoan Environmental & Safety Inc., Shenzhen, 518107, P. R. China
- Shenzhen Engineering Laboratory of Phosphorene and Optoelectronics, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Engineering, Shenzhen University, Shenzhen, 518060, China
| | - Ayesha Khan Tareen
- School of Mechanical Engineering, Dongguan University of Technology, Dongguan, 523808, China
| | - Muhammad Iqbal
- Department of BioChemistry, Quaid-i-Azam University, Islamabad, 45320, Islamic Republic of Pakistan
| | - Zhang Ye
- School of Chemistry and Chemical Engineering, University of South China, Hengyang, Hunan, 421001, China
| | - Zhongjian Xie
- Shenzhen International Institute for Biomedical Research, Shenzhen, Guangdong, 518116, China
| | - Asif Mahmood
- School of Chemical and Biomolecular Engineering, The University of Sydney, Sydney, 2006, Australia
| | - Nasir Mahmood
- School of Science, The Royal Melbourne Institute of Technology University, Melbourne, Victoria, VIC 3001, Australia
| | - Han Zhang
- Shenzhen Engineering Laboratory of Phosphorene and Optoelectronics, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Engineering, Shenzhen University, Shenzhen, 518060, China
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10
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Ahmad W, Wu J, Zhuang Q, Neogi A, Wang Z. Research Process on Photodetectors based on Group-10 Transition Metal Dichalcogenides. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2207641. [PMID: 36658722 DOI: 10.1002/smll.202207641] [Citation(s) in RCA: 8] [Impact Index Per Article: 8.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/07/2022] [Revised: 01/01/2023] [Indexed: 06/17/2023]
Abstract
Rapidly evolving group-10 transition metal dichalcogenides (TMDCs) offer remarkable electronic, optical, and mechanical properties, making them promising candidates for advanced optoelectronic applications. Compared to most TMDCs semiconductors, group-10-TMDCs possess unique structures, narrow bandgap, and influential physical properties that motivate the development of broadband photodetectors, specifically infrared photodetectors. This review presents the latest developments in the fabrication of broadband photodetectors based on conventional 2D TMDCs. It mainly focuses on the recent developments in group-10 TMDCs from the perspective of the lattice structure and synthesis techniques. Recent progress in group-10 TMDCs and their heterostructures with different dimensionality of materials-based broadband photodetectors is provided. Moreover, this review accounts for the latest applications of group-10 TMDCs in the fields of nanoelectronics and optoelectronics. Finally, conclusions and outlooks are summarized to provide perspectives for next-generation broadband photodetectors based on group-10 TMDCs.
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Affiliation(s)
- Waqas Ahmad
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Jiang Wu
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Qiandong Zhuang
- Physics Department, Lancaster University, Lancaster, LA14YB, UK
| | - Arup Neogi
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Zhiming Wang
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 610054, China
- Institute for Advanced Study, Chengdu University, Chengdu, 610106, China
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11
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Guo H, Yin Y, Yu W, Robertson J, Liu S, Zhang Z, Guo Y. Quantum transport of sub-5 nm InSe and In 2SSe monolayers and their heterostructure transistors. NANOSCALE 2023; 15:3496-3503. [PMID: 36723054 DOI: 10.1039/d2nr07180k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
The emerging two-dimensional (2D) semiconductors hold a promising prospect for sustaining Moore's law benefitting from the excellent device electrostatics with narrowed channel length. Here, the performance limits of sub-5 nm InSe and In2SSe metal-oxide-semiconductor field-effect transistors (MOSFETs) are explored by ab initio quantum transport simulations. The van der Waals heterostructures prepared by assembling different two-dimensional materials have emerged as a new design of artificial materials with promising physical properties. In this study, device performance was investigated utilizing InSe/In2SSe van der Waals heterostructure as the channel material. Both the monolayer and heterostructure devices can scale Moore's law down to 5 nm. A heterostructure transistor exhibits a higher on-state current and faster switching speed compared with isolated monolayer transistors. This work proves that the sub-5 nm InSe/In2SSe MOSFET can satisfy both the low power and high-performance requirements for the international technology roadmap for semiconductors in the next decade and can provide a feasible approach for enhancing device performance.
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Affiliation(s)
- Hailing Guo
- School of Electrical Engineering and Automation, Wuhan University, Wuhan, Hubei 430072, China.
| | - Yinheng Yin
- School of Electrical Engineering and Automation, Wuhan University, Wuhan, Hubei 430072, China.
| | - Wei Yu
- School of Electrical Engineering and Automation, Wuhan University, Wuhan, Hubei 430072, China.
| | - John Robertson
- School of Electrical Engineering and Automation, Wuhan University, Wuhan, Hubei 430072, China.
| | - Sheng Liu
- The Institute of Technological Sciences, Wuhan University, Wuhan 430072, China.
| | - Zhaofu Zhang
- The Institute of Technological Sciences, Wuhan University, Wuhan 430072, China.
| | - Yuzheng Guo
- School of Electrical Engineering and Automation, Wuhan University, Wuhan, Hubei 430072, China.
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12
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Su W, Zhang S, Liu C, Tian Q, Liu X, Li K, Lv Y, Liao L, Zou X. Interlayer Transition Induced Infrared Response in ReS 2/2D Perovskite van der Waals Heterostructure Photodetector. NANO LETTERS 2022; 22:10192-10199. [PMID: 36475758 DOI: 10.1021/acs.nanolett.2c04328] [Citation(s) in RCA: 8] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
The emerging Ruddlesden-Popper two-dimensional perovskite (2D PVK) has recently joined the family of 2D semiconductors as a potential competitor for building van der Waals (vdW) heterostructures in future optoelectronics. However, to date, most of the reported heterostructures based on 2D PVKs suffer from poor spectral response that is caused by intrinsic wide bandgap of constituting materials. Herein, a direct heterointerface bandgap (∼0.4 eV) between 2D PVK and ReS2 is demonstrated. The strong interlayer coupling reduces the energy interval at the heterojunction region so that the heterostructure shows high sensitivity with the spectral response expanding to 2000 nm. The large type-II band offsets exceeding 1.1 eV ensure fast photogenerated carriers separation at the heterointerface. When this heterostructure is used as a self-driven photodetector, it exhibits a record high detectivity up to 1.8 × 1014 Jones, surpassing any reported 2D self-driven devices, and an impressive external quantum efficiency of 68%.
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Affiliation(s)
- Wanhan Su
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha410082, China
| | - Sen Zhang
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha410082, China
| | - Chang Liu
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha410082, China
| | - Qianlei Tian
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha410082, China
| | - Xingqiang Liu
- State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha410082, China
| | - Kenli Li
- China National Supercomputing Center in Changsha, HunanChangsha410082, China
| | - Yawei Lv
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha410082, China
| | - Lei Liao
- State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha410082, China
- School of Physics and Electronic Engineering, Harbin Normal University, Harbin150025, China
| | - Xuming Zou
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha410082, China
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13
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Dhibar S, Dey A, Dalal A, Bhattacharya S, Sahu R, Sahoo R, Mondal A, Mehebub Rahaman SK, Kundu S, Saha B. An Organic Acid consisted Multiresponsive Self-Healing Supramolecular Cu(II)-Metallogel: Fabrication and Analysis of semiconducting device. J Mol Liq 2022. [DOI: 10.1016/j.molliq.2022.121021] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/14/2022]
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14
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Sun M, Baac HW, Shin C. Simulation Study: The Impact of Structural Variations on the Characteristics of a Buried-Channel-Array Transistor (BCAT) in DRAM. MICROMACHINES 2022; 13:1476. [PMID: 36144099 PMCID: PMC9505224 DOI: 10.3390/mi13091476] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 08/02/2022] [Revised: 08/31/2022] [Accepted: 08/31/2022] [Indexed: 06/16/2023]
Abstract
As the physical dimensions of cell transistors in dynamic random-access memory (DRAM) have been aggressively scaled down, buried-channel-array transistors (BCATs) have been adopted in industry to suppress short channel effects and to achieve a better performance. In very aggressively scaled-down BCATs, the impact of structural variations on the electrical characteristics can be more significant than expected. Using a technology computer-aided design (TCAD) tool, the structural variations in BCAT (e.g., the aspect ratio of the BCAT recess-to-gate length, BCAT depth, junction depth, fin width, and fin fillet radius) were simulated to enable a quantitative understanding of its impact on the device characteristics, such as the input/output characteristics, threshold voltage, subthreshold swing, on-/off-current ratio, and drain-induced barrier lowering. This work paves the road for the design of a variation-robust BCAT.
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Affiliation(s)
- Minjae Sun
- Department of Semiconductor Display Engineering, Sungkyunkwan University, Suwon 16419, Korea
- Samsung Institute of Technology, Samsung Co., Ltd., Hwaseong 18448, Korea
| | - Hyoung Won Baac
- Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Korea
| | - Changhwan Shin
- School of Electrical Engineering, Korea University, Seoul 02841, Korea
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15
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Li W, Li H, Khan K, Liu X, Wang H, Lin Y, Zhang L, Tareen AK, Wageh S, Al-Ghamdi AA, Teng D, Zhang H, Shi Z. Infrared Light Emission Devices Based on Two-Dimensional Materials. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:nano12172996. [PMID: 36080035 PMCID: PMC9457538 DOI: 10.3390/nano12172996] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/08/2022] [Revised: 08/18/2022] [Accepted: 08/28/2022] [Indexed: 05/25/2023]
Abstract
Two-dimensional (2D) materials have garnered considerable attention due to their advantageous properties, including tunable bandgap, prominent carrier mobility, tunable response and absorption spectral band, and so forth. The above-mentioned properties ensure that 2D materials hold great promise for various high-performance infrared (IR) applications, such as night vision, remote sensing, surveillance, target acquisition, optical communication, etc. Thus, it is of great significance to acquire better insight into IR applications based on 2D materials. In this review, we summarize the recent progress of 2D materials in IR light emission device applications. First, we introduce the background and motivation of the review, then the 2D materials suitable for IR light emission are presented, followed by a comprehensive review of 2D-material-based spontaneous emission and laser applications. Finally, further development directions and challenges are summarized. We believe that milestone investigations of 2D-material-based IR light emission applications will emerge soon, which are beneficial for 2D-material-based nano-device commercialization.
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Affiliation(s)
- Wenyi Li
- School of Physics & New Energy, Xuzhou University of Technology, Xuzhou 221018, China
| | - Hui Li
- School of Physics & New Energy, Xuzhou University of Technology, Xuzhou 221018, China
| | - Karim Khan
- Shenzhen Engineering Laboratory of Phosphorene and Optoelectronics, Collaborative Innovation Center for Optoelectronic Science and Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, Shenzhen University, Shenzhen 518060, China
- School of Electrical Engineering & Intelligentization, Dongguan University of Technology, Dongguan 523808, China
| | - Xiaosong Liu
- School of Physics & New Energy, Xuzhou University of Technology, Xuzhou 221018, China
| | - Hui Wang
- School of Physics & New Energy, Xuzhou University of Technology, Xuzhou 221018, China
| | - Yanping Lin
- School of Physics & New Energy, Xuzhou University of Technology, Xuzhou 221018, China
| | - Lishang Zhang
- School of Physics & New Energy, Xuzhou University of Technology, Xuzhou 221018, China
| | - Ayesha Khan Tareen
- Shenzhen Engineering Laboratory of Phosphorene and Optoelectronics, Collaborative Innovation Center for Optoelectronic Science and Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, Shenzhen University, Shenzhen 518060, China
- School of Mechanical Engineering, Dongguan University of Technology, Dongguan 523808, China
| | - S. Wageh
- Department of Physics, Faculty of Science, King Abdulaziz University, Jeddah 21589, Saudi Arabia
| | - Ahmed A. Al-Ghamdi
- Department of Physics, Faculty of Science, King Abdulaziz University, Jeddah 21589, Saudi Arabia
| | - Daoxiang Teng
- School of Physics & New Energy, Xuzhou University of Technology, Xuzhou 221018, China
| | - Han Zhang
- Shenzhen Engineering Laboratory of Phosphorene and Optoelectronics, Collaborative Innovation Center for Optoelectronic Science and Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, Shenzhen University, Shenzhen 518060, China
| | - Zhe Shi
- School of Physics & New Energy, Xuzhou University of Technology, Xuzhou 221018, China
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16
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Zhou J, Shi X, Dong X, Sun L, Shi D, Liang X, Xu H. Tuning the molecular electronic structure and macroscopic aggregates of [2 + 2]-type H 2- and Zn(II)porphyrins through meso-substituents. J COORD CHEM 2022. [DOI: 10.1080/00958972.2022.2103687] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/16/2022]
Affiliation(s)
- Ji Zhou
- Jiangsu Co-innovation Center of Efficient Processing and Utilization of Forest Resources, College of Chemical Engineering, Jiangsu Key Lab of Biomass-based Green Fuels and Chemicals, Nanjing Forestry University, Nanjing, P. R. China
| | - Xingxin Shi
- School of Chemistry and Chemical Engineering, Jiangsu University, Zhenjiang, P. R. China
| | - Xinyi Dong
- School of Chemistry and Chemical Engineering, Jiangsu University, Zhenjiang, P. R. China
| | - Lei Sun
- Jiangsu Co-innovation Center of Efficient Processing and Utilization of Forest Resources, College of Chemical Engineering, Jiangsu Key Lab of Biomass-based Green Fuels and Chemicals, Nanjing Forestry University, Nanjing, P. R. China
| | - Donghai Shi
- Jiangsu Co-innovation Center of Efficient Processing and Utilization of Forest Resources, College of Chemical Engineering, Jiangsu Key Lab of Biomass-based Green Fuels and Chemicals, Nanjing Forestry University, Nanjing, P. R. China
| | - Xu Liang
- School of Chemistry and Chemical Engineering, Jiangsu University, Zhenjiang, P. R. China
| | - Haijun Xu
- Jiangsu Co-innovation Center of Efficient Processing and Utilization of Forest Resources, College of Chemical Engineering, Jiangsu Key Lab of Biomass-based Green Fuels and Chemicals, Nanjing Forestry University, Nanjing, P. R. China
- School of Chemistry and Chemical Engineering, Henan Normal University, Xinxiang, P. R. China
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17
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Yu H, Li D, Shang Y, Pei L, Zhang G, Yan H, Wang L. Transport properties of MoS 2/V 7(Bz) 8 and graphene/V 7(Bz) 8 vdW junctions tuned by bias and gate voltages. RSC Adv 2022; 12:17422-17433. [PMID: 35765433 PMCID: PMC9189623 DOI: 10.1039/d2ra02196j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/05/2022] [Accepted: 06/06/2022] [Indexed: 12/02/2022] Open
Abstract
The MoS2/V7(Bz)8 and graphene/V7(Bz)8 vdW junctions are designed and the transport properties of their four-terminal devices are comparatively investigated based on density functional theory (DFT) and the nonequilibrium Green's function (NEGF) technique. The MoS2 and graphene nanoribbons act as the source-to-drain channel and the spin-polarized one-dimensional (1D) benzene-V multidecker complex nanowire (V7(Bz)8) serves as the gate channel. Gate voltages applied on V7(Bz)8 exert different influences of electron transport on MoS2/V7(Bz)8 and graphene/V7(Bz)8. In MoS2/V7(Bz)8, the interplay of source and gate bias potentials could induce promising properties such as negative differential resistance (NDR) behavior, output/input current switching, and spin-polarized currents. In contrast, the gate bias plays an insignificant effect on the transport along graphene in graphene/V7(Bz)8. This dissimilarity is attributed to the fact that the conductivity follows the sequence of MoS2 < V7(Bz)8 < graphene. These transport characteristics are examined by analyzing the conductivity, the currents, the local density of states (LDOS), and the transmission spectra. These results are valuable in designing multi-terminal nanoelectronic devices.
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Affiliation(s)
- Hong Yu
- School of Materials Science and Chemical Engineering, Harbin University of Science and Technology Harbin 150040 P. R. China
| | - Danting Li
- School of Materials Science and Chemical Engineering, Harbin University of Science and Technology Harbin 150040 P. R. China
| | - Yan Shang
- School of Materials Science and Chemical Engineering, Harbin University of Science and Technology Harbin 150040 P. R. China
| | - Lei Pei
- School of Materials Science and Chemical Engineering, Harbin University of Science and Technology Harbin 150040 P. R. China
| | - Guiling Zhang
- School of Materials Science and Chemical Engineering, Harbin University of Science and Technology Harbin 150040 P. R. China
| | - Hong Yan
- School of Materials Science and Chemical Engineering, Harbin University of Science and Technology Harbin 150040 P. R. China
| | - Long Wang
- HeiLongJiang Construction Investment Group Co. Ltd No. 523, Sanda Dongli Road Harbin 150040 P. R. China
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18
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Khan K, Tareen AK, Iqbal M, Mahmood A, Mahmood N, Shi Z, Yin J, Qing D, Ma C, Zhang H. Recent development in graphdiyne and its derivative materials for novel biomedical applications. J Mater Chem B 2021; 9:9461-9484. [PMID: 34762090 DOI: 10.1039/d1tb01794b] [Citation(s) in RCA: 6] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/13/2022]
Abstract
Graphdiyne (GDY), which possess sp- and sp2-hybridized carbon and Dirac cones, offers unique physical and chemical properties, including an adjustable intrinsic bandgap, excellent charge carrier transfer efficiency, and superior conductivity compared to other carbon allotropes. These exceptional qualities of GDY and its derivatives have been successfully used in a variety of fields, including catalysis, energy, environmental protection, and biological applications. Herein, we focus on the potential application of GDY and its derivatives in the biomedical domain, including biosensing, biological protection, cancer therapy, and antibacterial agents, demonstrating how the biomimetic behavior of these materials can be a step forward in bridging the gap between nature and applications. Considering the excellent biocompatibility, solubility and selectivity of GDY and its derived materials, they have shown great potential as biosensing and bio-imaging materials. The unusual combination of properties in GDY has been used in biological applications such as "OFF-ON" DNA detection and enzymatic sensing, where GDY has a greater adsorption capacity than graphene and other 2D materials, resulting in increased sensitivity. GDY and its derivatives have also been used in cancer treatment due to their high doxorubicin (DOX) loading capacity (using-stacking) and photothermal conversion ability, and radiation protection since their initial biological use. The poor biodegradation rate of graphene demands the search for new nanomaterials. Accordingly, GDY has better biocompatibility and bio-safety than other 2D nanomaterials, especially graphene and its oxide, due to its absence of aggregation in the physiological environment. Thus, GDY-based nanomaterials have become promising candidates as bio-delivery carriers. Besides, GDY and GDY-based materials have also shown interesting applications in the fields of cell-culture, cell-growth and tissue engineering. Herein, we present a comprehensive review on the applications of GDY and its derivatives as biomedical materials, followed by their future perspectives. This review will provide an outlook for the application of graphene and its derivatives and may open up new horizons to inspire broader interests across various disciplines. Finally, the future prospects for GDY-based materials are examined for their potential biological use.
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Affiliation(s)
- Karim Khan
- School of Electrical Engineering & Intelligentization, Dongguan University of Technology, Dongguan, 523808, China. .,Shenzhen Engineering Laboratory of Phosphorene and Optoelectronics, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Engineering, Shenzhen University, Shenzhen, 518060, China.
| | - Ayesha Khan Tareen
- Shenzhen Engineering Laboratory of Phosphorene and Optoelectronics, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Engineering, Shenzhen University, Shenzhen, 518060, China. .,College of Materials Science and Engineering, Guangdong Research Center for Interfacial Engineering of Functional Materials, Shenzhen University, 3688 Nanhai Ave, Shenzhen, 518060, P. R. China.,School of Mechanical Engineering, Dongguan University of Technology, Dongguan, 523808, P. R. China
| | - Muhammad Iqbal
- Department of Bio-Chemistry, Abdul Wali Khan University Mardan, Khyber Pakhtunkhwa (K.P.K.), 23200, Islamic Republic of Pakistan
| | - Asif Mahmood
- School of Chemical and Bio-molecular Engineering, The University of Sydney, 2006, Sydney, Australia
| | - Nasir Mahmood
- School of Engineering, The Royal Melbourne Institute of Technology (RMIT) University, Melbourne, Victoria, Australia
| | - Zhe Shi
- Shenzhen Engineering Laboratory of Phosphorene and Optoelectronics, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Engineering, Shenzhen University, Shenzhen, 518060, China.
| | - Jinde Yin
- Shenzhen Nuoan Environmental & Safety Inc., Shenzhen 518107, P. R. China.,College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, P. R. China
| | - Duan Qing
- Shenzhen Nuoan Environmental & Safety Inc., Shenzhen 518107, P. R. China
| | - Chunyang Ma
- Shenzhen Engineering Laboratory of Phosphorene and Optoelectronics, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Engineering, Shenzhen University, Shenzhen, 518060, China.
| | - Han Zhang
- Shenzhen Engineering Laboratory of Phosphorene and Optoelectronics, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Engineering, Shenzhen University, Shenzhen, 518060, China.
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19
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Recent development in emerging phosphorene based novel materials: Progress, challenges, prospects and their fascinating sensing applications. PROG SOLID STATE CH 2021. [DOI: 10.1016/j.progsolidstchem.2021.100336] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/30/2022]
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20
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Zhang D, Yang M. Surface Chemistry of MoS 2 in Remote Oxygen Plasma. LANGMUIR : THE ACS JOURNAL OF SURFACES AND COLLOIDS 2021; 37:12112-12117. [PMID: 34613732 DOI: 10.1021/acs.langmuir.1c01954] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Miniaturization of electronic devices down to the nanoscale needs corresponding processing technologies with precision at the atomic layer level. The plasma atomic layer etching (ALE) technique is playing an active role in this demand. However, theoretical research on the ALE mechanism is a great challenge. We propose a method of spontaneously searching adsorption sites (SSASs) to understand what surface chemistry occurs in the ALE processing of MoS2 treated by the remote oxygen plasma. The SSAS results are in good agreement with experimental observations. Chemical adsorption of O atoms occurs only in the topmost layer of the MoS2 surface. The MoS2 surface has four different adsorption sites with different probabilities of binding an O atom, denoted by 0Sbb, 0Sbbc, 2Sbb, and 3Sbb configurations, which have zero, zero, two, and three S-Mo bonds broken by the introduced O atom, respectively. Four adsorption sites of the MoS2 surface play different roles in the surface oxidation in the remote oxygen plasma.
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Affiliation(s)
- Daoyu Zhang
- School of Physics, Southeast University, Nanjing 211189, China
| | - Minnan Yang
- Department of Physics, China Pharmaceutical University, Nanjing 211198, China
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21
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Khan K, Tareen AK, Iqbal M, Wang L, Ma C, Shi Z, Ye Z, Ahmad W, Rehman Sagar RU, Shams SS, Sophia PJ, Ullah Z, Xie Z, Guo Z, Zhang H. Navigating recent advances in monoelemental materials (Xenes)-fundamental to biomedical applications. PROG SOLID STATE CH 2021. [DOI: 10.1016/j.progsolidstchem.2021.100326] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/30/2022]
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22
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Addressing the Theoretical and Experimental Aspects of Low-Dimensional-Materials-Based FET Immunosensors: A Review. CHEMOSENSORS 2021. [DOI: 10.3390/chemosensors9070162] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/08/2023]
Abstract
Electrochemical immunosensors (EI) have been widely investigated in the last several years. Among them, immunosensors based on low-dimensional materials (LDM) stand out, as they could provide a substantial gain in fabricating point-of-care devices, paving the way for fast, precise, and sensitive diagnosis of numerous severe illnesses. The high surface area available in LDMs makes it possible to immobilize a high density of bioreceptors, improving the sensitivity in biorecognition events between antibodies and antigens. If on the one hand, many works present promising results in using LDMs as a sensing material in EIs, on the other hand, very few of them discuss the fundamental interactions involved at the interfaces. Understanding the fundamental Chemistry and Physics of the interactions between the surface of LDMs and the bioreceptors, and how the operating conditions and biorecognition events affect those interactions, is vital when proposing new devices. Here, we present a review of recent works on EIs, focusing on devices that use LDMs (1D and 2D) as the sensing substrate. To do so, we highlight both experimental and theoretical aspects, bringing to light the fundamental aspects of the main interactions occurring at the interfaces and the operating mechanisms in which the detections are based.
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