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Namsheer K, Thomas S, Sharma A, Thomas SA, Sree Raj KA, Kumar V, Gagliardi A, Aravind A, Rout CS. Rational design of selenium inserted 1T/2H mixed-phase molybdenum disulfide for energy storage and pollutant degradation applications. NANOTECHNOLOGY 2022; 33:445703. [PMID: 35830771 DOI: 10.1088/1361-6528/ac80ca] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/07/2022] [Accepted: 07/13/2022] [Indexed: 06/15/2023]
Abstract
MoS2based materials are recognized as the promising candidate for multifunctional applications due to its unique physicochemical properties. But presence of lower number of active sites, poor electrical conductivity, and less stability of 2H and 1T MoS2inherits its practical applications. Herein, we synthesized the Se inserted mixed-phase 2H/1T MoS2nanosheets with abundant defects sites to achieve improved overall electrochemical activity. Moreover, the chalcogen insertion induces the recombination of photogenerated excitons and enhances the life of carriers. The bifunctional energy storage and photocatalytic pollutant degradation studies of the prepare materials are carried out. Fabricated symmetric solid-state supercapacitor showed an exceptional capacitance of 178 mF cm-2with an excellent energy density of 8μWh cm-2and power density of 137 mW cm-2, with remarkable capacitance retention of 86.34% after successive 8000 charge-discharge cycles. The photocatalytic dye degradation experiments demonstrate that the prepared Se incorporated 1T/2H MoS2is a promising candidate for dye degradation applications. Further, the DFT studies confirmed that the Se inserted MoS2is a promising electrode material for supercapacitor applications with higherCQdue to a larger density of states near Fermi level as compared to pristine MoS2.
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Affiliation(s)
- K Namsheer
- Centre for Nano and Material Sciences, Jain University, Jain Global Campus, Jakkasandra, Ramanagaram, Bangalore-562112, India
| | - Siby Thomas
- Department of Electrical and Computer Engineering, Technical University of Munich (TUM), Karlstrasse 45-47, D-80333 Munich, Germany
| | - Aditya Sharma
- Centre for Nano and Material Sciences, Jain University, Jain Global Campus, Jakkasandra, Ramanagaram, Bangalore-562112, India
| | - Susmi Anna Thomas
- Centre for Advanced Functional Materials (CAFM), Postgraduate and Research Department of Physics, Bishop Moore College, Mavelikara, Alappuzha, Kerala 690110, India
| | - K A Sree Raj
- Centre for Nano and Material Sciences, Jain University, Jain Global Campus, Jakkasandra, Ramanagaram, Bangalore-562112, India
| | - Vipin Kumar
- Department of Physical Electronics, School of Electrical Engineering, Tel Aviv University, Tel Aviv 6997801, Israel
- The Sackler Center for Computational Molecular and Materials Science, Tel Aviv University, Tel Aviv 6997801, Israel
| | - Alessio Gagliardi
- Department of Electrical and Computer Engineering, Technical University of Munich (TUM), Karlstrasse 45-47, D-80333 Munich, Germany
| | - Arun Aravind
- Centre for Advanced Functional Materials (CAFM), Postgraduate and Research Department of Physics, Bishop Moore College, Mavelikara, Alappuzha, Kerala 690110, India
| | - Chandra Sekhar Rout
- Centre for Nano and Material Sciences, Jain University, Jain Global Campus, Jakkasandra, Ramanagaram, Bangalore-562112, India
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Zhang S, Wang X, Wang Y, Zhang H, Huang B, Dai Y, Wei W. Electronic Properties of Defective Janus MoSSe Monolayer. J Phys Chem Lett 2022; 13:4807-4814. [PMID: 35616282 DOI: 10.1021/acs.jpclett.2c01195] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Two-dimensional (2D) transition-metal dichalcogenides (TMDCs) hold great promise in electronics and optoelectronics due to their novel electronic and optical properties. In TMDCs, structural defects are inevitable and might play a decisive role in device performance. In this work, point defects, line vacancies, and 60° grain boundaries (GBs) are explored in 2D Janus MoSSe, a new member to the family of TMDCs, by means of the first-principles calculations. S and Se vacancies are found to be the most favorable point defects, and they tend to aggregate along the zigzag direction to form line vacancies. Comparing with isolated point defects, line vacancies induced in-gap states are more dispersive. In particular, 60° GBs behave as one-dimensional metallic quantum wires, as a consequence of the polar discontinuity. Thus, effectively controlling the formation of defects at nanoscale brings new electronic characteristics, providing new opportunities to broaden the applications of 2D TMDCs.
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Affiliation(s)
- Shuhui Zhang
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
| | - Xinxin Wang
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
| | - Yuanyuan Wang
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
| | - Haona Zhang
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
| | - Baibiao Huang
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
| | - Ying Dai
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
| | - Wei Wei
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
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Li T, Luo S, Wang X, Zhang L. Alternative Lone-Pair ns 2 -Cation-Based Semiconductors beyond Lead Halide Perovskites for Optoelectronic Applications. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2008574. [PMID: 34060151 DOI: 10.1002/adma.202008574] [Citation(s) in RCA: 18] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/19/2020] [Revised: 03/22/2021] [Indexed: 06/12/2023]
Abstract
Lead halide perovskites have emerged in the last decade as advantageous high-performance optoelectronic semiconductors, and have undergone rapid development for diverse applications such as solar cells, light-emitting diodes , and photodetectors. While material instability and lead toxicity are still major concerns hindering their commercialization, they offer promising prospects and design principles for developing promising optoelectronic materials. The distinguished optoelectronic properties of lead halide perovskites stem from the Pb2+ cation with a lone-pair 6s2 electronic configuration embedded in a mixed covalent-ionic bonding lattice. Herein, we summarize alternative Pb-free semiconductors containing lone-pair ns2 cations, intending to offer insights for developing potential optoelectronic materials other than lead halide perovskites. We start with the physical underpinning of how the ns2 cations within the material lattice allow for superior optoelectronic properties. We then review the emerging Pb-free semiconductors containing ns2 cations in terms of structural dimensionality, which is crucial for optoelectronic performance. For each category of materials, the research progresses on crystal structures, electronic/optical properties, device applications, and recent efforts for performance enhancements are overviewed. Finally, the issues hindering the further developments of studied materials are surveyed along with possible strategies to overcome them, which also provides an outlook on the future research in this field.
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Affiliation(s)
- Tianshu Li
- State Key Laboratory of Integrated Optoelectronics, Key Laboratory of Automobile Materials of MOE, and School of Materials Science and Engineering, Jilin University, Changchun, 130012, China
| | - Shulin Luo
- State Key Laboratory of Integrated Optoelectronics, Key Laboratory of Automobile Materials of MOE, and School of Materials Science and Engineering, Jilin University, Changchun, 130012, China
| | - Xinjiang Wang
- State Key Laboratory of Integrated Optoelectronics, Key Laboratory of Automobile Materials of MOE, and School of Materials Science and Engineering, Jilin University, Changchun, 130012, China
| | - Lijun Zhang
- State Key Laboratory of Integrated Optoelectronics, Key Laboratory of Automobile Materials of MOE, and School of Materials Science and Engineering, Jilin University, Changchun, 130012, China
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Zaman N, Noor T, Iqbal N. Recent advances in the metal–organic framework-based electrocatalysts for the hydrogen evolution reaction in water splitting: a review. RSC Adv 2021; 11:21904-21925. [PMID: 35480834 PMCID: PMC9034227 DOI: 10.1039/d1ra02240g] [Citation(s) in RCA: 25] [Impact Index Per Article: 8.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/21/2021] [Accepted: 06/09/2021] [Indexed: 01/18/2023] Open
Abstract
Water splitting is an important technology for alternative and sustainable energy storage, and a way for the production of hydrogen without generating pollution.
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Affiliation(s)
- Neelam Zaman
- U.S.-Pakistan Centre for Advanced Studies in Energy (USPCAS-E)
- National University of Sciences and Technology (NUST)
- Islamabad 44000
- Pakistan
| | - Tayyaba Noor
- School of Chemical and Materials Engineering (SCME)
- National University of Sciences and Technology (NUST)
- Islamabad 44000
- Pakistan
| | - Naseem Iqbal
- U.S.-Pakistan Centre for Advanced Studies in Energy (USPCAS-E)
- National University of Sciences and Technology (NUST)
- Islamabad 44000
- Pakistan
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