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Zhang Z, Skripka A, Dahl JC, Dun C, Urban JJ, Jaque D, Schuck PJ, Cohen BE, Chan EM. Tuning Phonon Energies in Lanthanide-doped Potassium Lead Halide Nanocrystals for Enhanced Nonlinearity and Upconversion. Angew Chem Int Ed Engl 2023; 62:e202212549. [PMID: 36377596 DOI: 10.1002/anie.202212549] [Citation(s) in RCA: 10] [Impact Index Per Article: 10.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/24/2022] [Revised: 11/11/2022] [Accepted: 11/14/2022] [Indexed: 11/16/2022]
Abstract
Optical applications of lanthanide-doped nanoparticles require materials with low phonon energies to minimize nonradiative relaxation and promote nonlinear processes like upconversion. Heavy halide hosts offer low phonon energies but are challenging to synthesize as nanocrystals. Here, we demonstrate the size-controlled synthesis of low-phonon-energy KPb2 X5 (X=Cl, Br) nanoparticles and the ability to tune nanocrystal phonon energies as low as 128 cm-1 . KPb2 Cl5 nanoparticles are moisture resistant and can be efficiently doped with lighter lanthanides. The low phonon energies of KPb2 X5 nanoparticles promote upconversion luminescence from higher lanthanide excited states and enable highly nonlinear, avalanche-like emission from KPb2 Cl5 : Nd3+ nanoparticles. The realization of nanoparticles with tunable, ultra-low phonon energies facilitates the discovery of nanomaterials with phonon-dependent properties, precisely engineered for applications in nanoscale imaging, sensing, luminescence thermometry and energy conversion.
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Affiliation(s)
- Zhuolei Zhang
- School of Chemistry and Chemical Engineering, Huazhong University of Science and Technology, 1037 Luoyu Load, Wuhan, 430074, China.,The Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA
| | - Artiom Skripka
- The Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA.,Nanomaterials for Bioimaging Group (nanoBIG), Departamento de Física de Materiales, Facultad de Ciencias, Universidad Autónoma de Madrid, 28049, Madrid, Spain
| | - Jakob C Dahl
- The Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA.,Department of Chemistry, University of California at Berkeley, Berkeley, CA 94720, USA
| | - Chaochao Dun
- The Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA
| | - Jeffrey J Urban
- The Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA
| | - Daniel Jaque
- Nanomaterials for Bioimaging Group (nanoBIG), Departamento de Física de Materiales, Facultad de Ciencias, Universidad Autónoma de Madrid, 28049, Madrid, Spain
| | - P James Schuck
- Department of Mechanical Engineering, Columbia University, New York, NY 10027, USA
| | - Bruce E Cohen
- The Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA.,Division of Molecular Biophysics & Integrated Bioimaging, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA
| | - Emory M Chan
- The Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA
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Vu TV, Lavrentyev AA, Gabrelian BV, Vo DD, Tong HD, Denysyuk NM, Isaenko LI, Tarasova AY, Khyzhun OY. Theoretical and experimental study on the electronic and optical properties of K 0.5Rb 0.5Pb 2Br 5: a promising laser host material. RSC Adv 2020; 10:11156-11164. [PMID: 35495300 PMCID: PMC9050621 DOI: 10.1039/d0ra00718h] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/23/2020] [Accepted: 03/12/2020] [Indexed: 11/23/2022] Open
Abstract
The data on the electronic structure and optical properties of bromide K0.5Rb0.5Pb2Br5 achieved by first-principle calculations and verified by X-ray spectroscopy measurements are reported. The kinetic energy, the Coulomb potential induced by the exchange hole, spin-orbital effects, and Coulomb repulsion were taken into account by applying the Tran and Blaha modified Becke–Johnson function (TB-mBJ), Hubbard U parameter, and spin-orbital coupling effect (SOC) in the TB-mBJ + U + SOC technique. The band gap was for the first time defined to be 3.23 eV. The partial density of state (PDOS) curves of K0.5Rb0.5Pb2Br5 agree well with XES K Ll and Br Kβ2, and XPS spectra. The valence band (VB) is characterized by the Pb-5d3/2 and Pb-5d5/2 sub-states locating in the vicinities of −20 eV and −18 eV, respectively. The VB middle part is mainly formed by K-3p, Rb-4p and Br-4s states, in which the separation of Rb-4p3/2 and Rb-4p1/2 was also observed. The strong hybridization of Br-p and Pb-s/p states near −6.5 eV reveals a major covalent part in the Br–Pb bonding. With a large band gap of 3.23 eV, and the remarkably high possibility of inter-band transition in energy ranges of 4–7 eV, and 10–12 eV, the bromide K0.5Rb0.5Pb2Br5 is expected to be a very promising active host material for core valence luminescence and mid-infrared rare-earth doped laser materials. The anisotropy of optical properties in K0.5Rb0.5Pb2Br5 is not significant, and it occurs at the extrema in the optical spectra. The absorption coefficient α(ω) is in the order of magnitude of 106 cm−1 for an energy range of 5–25 eV. The data on the electronic structure and optical properties of bromide K0.5Rb0.5Pb2Br5 achieved by first-principle calculations and verified by X-ray spectroscopy measurements are reported.![]()
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Affiliation(s)
- Tuan V Vu
- Division of Computational Physics, Institute for Computational Science, Ton Duc Thang University Ho Chi Minh City Vietnam .,Faculty of Electrical & Electronics Engineering, Ton Duc Thang University Ho Chi Minh City Vietnam
| | - A A Lavrentyev
- Department of Electrical Engineering and Electronics, Don State Technical University 1 Gagarin Square 344010 Rostov-on-Don Russian Federation
| | - B V Gabrelian
- Department of Computational Technique and Automated System Software, Don State Technical University 1 Gagarin Square 344010 Rostov-on-Don Russian Federation
| | - Dat D Vo
- Division of Computational Physics, Institute for Computational Science, Ton Duc Thang University Ho Chi Minh City Vietnam .,Faculty of Electrical & Electronics Engineering, Ton Duc Thang University Ho Chi Minh City Vietnam
| | - Hien D Tong
- Faculty of Engineering, Vietnamese German University Binh Duong Vietnam
| | - N M Denysyuk
- Frantsevych Institute for Problems of Materials Science, National Academy of Sciences of Ukraine 3 Krzhyzhanivsky Street 03142 Kyiv Ukraine
| | - L I Isaenko
- Novosibirsk State University 630090 Novosibirsk Russian Federation.,V. S. Sobolev Institute of Geology and Mineralogy, SB RAS 630090 Novosibirsk Russian Federation
| | - A Y Tarasova
- Novosibirsk State University 630090 Novosibirsk Russian Federation.,V. S. Sobolev Institute of Geology and Mineralogy, SB RAS 630090 Novosibirsk Russian Federation
| | - O Y Khyzhun
- Frantsevych Institute for Problems of Materials Science, National Academy of Sciences of Ukraine 3 Krzhyzhanivsky Street 03142 Kyiv Ukraine
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