Adsorption performance of M-doped (M = Ti and Cr) gallium nitride nanosheets towards SO2 and NO2: a DFT-D calculation

A first principles study of RbSnCl3 perovskite toward NH3, SO2, and NO gas sensing

The sensitivity of a RbSnCl3 perovskite 2D layer toward NH3, SO2, and NO toxic gases has been studied via DFT analysis. The tri-atomic layer of RbSnCl3 possessed a tetragonal symmetry with a band gap of 1.433 eV. The adsorption energies of RbSnCl3 for NH3, SO2 and NO are -0.09, -0.43, and -0.56 eV respectively with a recovery time ranging from 3.4 × 10-8 to 3.5 ms. RbSnCl3 is highly sensitive toward SO2 and NO compared to NH3. The adsorption of SO2 and NO results in a significant structural deformation and a semiconductor-to-metal transition of RbSnCl3 perovskite. A high absorption coefficient (>103 cm-1), excessive optical conductivity (>1014 s-1), and a very low reflectivity (<3%) make RbSnCl3 a potential candidate for numerous optoelectronic applications. A significant shift in optical responses is observed through SO2 and NO adsorption, which can enable identification of the adsorbed gases. The studied characteristics signify that RbSnCl3 can be a potential candidate for SO2 and NO detection.

Adsorption and Sensing of NO2, SO2, and NH3 on a Janus MoSeTe Monolayer Decorated with Transition Metals (Fe, Co, and Ni): A First-Principles Study

This paper reports the adsorption of toxic gases (NO2, SO2, and NH3) on a MoSeTe structure based on first principles. It was found that the gas (NO2, SO2, and NH3) adsorption on a pure MoSeTe monolayer was weak; however, the adsorption performance of these gas molecules on transition-metal-atom-supported MoSeTe monolayers (TM-MoSeTe) was better than that on pure MoSeTe monolayers. In addition, there was more charge transfer between gas molecules and TM-MoSeTe. By comparing the adsorption energy and charge transfer values, the trend of adsorption energy and charge transfer in the adsorption of NO2 and SO2 was determined to be Fe-MoSeTe > Co-MoSeTe > Ni-MoSeTe. For the adsorption of NH3, the effect trend was as follows: Co-MoSeTe > Ni-MoSeTe > Fe-MoSeTe. Finally, by comparing their response times, the better gas sensor was selected. The Ni-MoSeTe system is suitable for NO2 gas sensors, and the Fe-MoSeTe and Co-MoSeTe systems are suitable for SO2 gas sensors. The Fe-MoSeTe, Co-MoSeTe, and Ni-MoSeTe systems are all suitable for NH3 gas sensors. Janus transition-metal dichalcogenides have the potential to be used as gas-sensing and scavenging materials.

Proliferation of the Light and Gas Interaction with GaN Nanorods Grown on a V-Grooved Si(111) Substrate for UV Photodetector and NO2 Gas Sensor Applications

Although excellent milestones of III-nitrides in optoelectronic devices have been achieved, the focus on the optimization of their geometrical structure for multiple applications is very rare. To address this issue, we exclusively designed a prototype device to enhance the photoconversion efficiency and gas interaction capabilities of GaN nanorods (NRs) grown on a V-grooved Si(100) substrate with Si(111) facets for photodetector and gas sensor applications. Photoluminescence studies have demonstrated an increased surface-to-volume ratio and light trapping for GaN NRs grown on V-grooved Si(111). GaN NRs on V-grooved Si(100) with Si(111) facets exhibited high photodetection performance in terms of photoresponsivity (217 mA/cm²), detectivity (3 × 10¹³ Jones), and external quantum efficiency (2.73 × 10⁵%) compared to GaN NRs grown on plain Si(111). Owing to the robust interconnection between NRs and a high surface-to-volume ratio, the GaN NRs grown on V-grooved Si(100) with Si(111) facets probed for NO₂ detection with the assistance of photonic energy. The photo-assisted sensing makes it possible to detect NO₂ gas at the ppb level at room temperature, resulting in significant power reduction. The device showed high selectivity to NO₂ against other target gases, such as NO, H₂S, H₂, NH₃, and CO. The device showed excellent long-term stability at room temperature; the humidity effect on the device performance was also examined. The excellent device performance was due to the following: (i) benefited from the V-grooved Si structure, GaN NRs significantly trapped the incident light, which promoted high photocurrent conversion efficiency and (ii) GaN NRs grown on V-grooved Si(100) with Si(111) facets increased the surface-to-volume ratio and thus improved the gas interaction with a better diffusion ratio and high light trapping, which resulted in increased response/recovery times. These results represent an important forward step in prototype devices for multiple applications in materials research.