Wang X, Ma C, Zhou W, Tan W. Crystalline Orientation-Dependent Ferromagnetism in N
+-Implanted MgO Single Crystal.
MATERIALS (BASEL, SWITZERLAND) 2022;
15:7274. [PMID:
36295336 PMCID:
PMC9608189 DOI:
10.3390/ma15207274]
[Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 09/27/2022] [Revised: 10/12/2022] [Accepted: 10/15/2022] [Indexed: 06/16/2023]
Abstract
Samples of (110), (100), and (111) MgO single crystals were implanted with 70 keV N ions at room temperature. All as-implanted samples showed room temperature hysteresis in magnetization loops. The observed saturation magnetization (Ms) was 0.79 × 10−4 emu/g, 1.28 × 10−4 emu/g, and 1.5 × 10−4 emu/g for (110), (100) and (111) orientation implanted-MgO and follows the relation Ms(111) > Ms(100) > Ms(110), indicative of crystalline orientation-dependent ferromagnetism in N-implanted MgO. The samples were characterized by X-ray photoelectron spectroscopy (XPS), high resolution X-ray diffraction (HRXRD), reciprocal space mapping (RSM), and photoluminescence (PL). The results indicated that the amount of N-substitute-O and N-interstitial defects in these three N-implanted MgO samples showed the same changing tendency as compared with Ms data. Thus, we conclude that the N-substitute-O and N-interstitial defects may play a crucial role in controlling the N+-implanted-induced ferromagnetism.
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