Photoelectrical properties of graphene/doped GeSn vertical heterostructures

Low-cost and efficient all group-IV visible/shortwave infrared dual-band photodetector

Low-cost broadband photodetectors (PDs) based on group-IV materials are highly demanded. Herein, a vertical all group-IV graphene-i-n (Gr-i-n) structure based on sputtering-grown undoped Ge0.92Sn0.08/Ge multiple quantum wells (MQWs) on n-Ge substrate was proposed to realize efficient visible/shortwave infrared (VIS/SWIR) dual-band photoresponse. Harnessing Gr-germanium tin (GeSn)/Ge MQWs van der Waals heterojunctions, an extended surface depletion region was established, facilitating separation and transportation of photogenerated carriers at VIS wavelengths. Consequently, remarkable VIS/SWIR dual-band response ranging from 400 to 2000 nm with a rapid response time of 23 μs was achieved. Compared to the PD without Gr, the external quantum efficiency at 420, 660, and 1520 nm was effectively enhanced by 10.2-, 5.2-, and 1.2-fold, reaching 40, 42, and 50%, respectively. This research paves the way for the advancement of all group-IV VIS/SWIR broadband PDs and presents what we believe to be a novel approach to the design of low-cost broadband PDs.

Spark Discharge Synthesis and Characterization of Ge/Sn Janus Nanoparticles

Germanium-tin nanoparticles are promising materials for near- and mid-infrared photonics thanks to their tunable optical properties and compatibility with silicon technology. This work proposes modifying the spark discharge method to produce Ge/Sn aerosol nanoparticles during the simultaneous erosion of germanium and tin electrodes. Since tin and germanium have a significant difference in the potential for electrical erosion, an electrical circuit damped for one period was developed to ensure the synthesis of Ge/Sn nanoparticles consisting of independent germanium and tin crystals of different sizes, with the ratio of the atomic fraction of tin to germanium varying from 0.08 ± 0.03 to 0.24 ± 0.07. We investigated the elemental and phase composition, size, morphology, and Raman and absorbance spectra of the nanoparticles synthesized under different inter-electrode gap voltages and the presence of additional thermal treatment directly in a gas flow at 750 °C. The research shows that the in-flow thermal treatment of aerosol-agglomerated nanoparticles produced special individual bicrystalline Janus Ge/Sn nanoparticles with an average size of 27 nm and a decreasing absorption function with a changing slope at 700 nm.

Recent advances in development of nanostructured photodetectors from ultraviolet to infrared region: A review

Herein, we aim to evaluate the photodetector performance of various nanostructured materials (thin films, 2-D nanolayers, 1-D nanowires, and 0-D quantum dots) in ultraviolet (UV), visible, and infrared (IR) regions. Specifically, semiconductor-based metal oxides such as ZnO, Ga₂O₃, SnO₂, TiO₂, and WO₃ are the majority preferred materials for UV photodetection due to their broad band gap, stability, and relatively simple fabrication processes. Whereas, the graphene-based hetero- and nano-structured composites are considered as prominent visible light active photodetectors. Interestingly, graphene exhibits broad band spectral absorption and ultra-high mobility, which derives graphene as a suitable candidate for visible detector. Further, due to the very low absorption rate of graphene (2%), various materials have been integrated with graphene (rGO-CZS, PQD-rGO, N-SLG, and GO doped PbI₂). In the case of IR photodetectors, quantum dot IR detectors prevails significant advantage over the quantum well IR detectors due to the 0-D quantum confinement and ability to absorb the light with any polarization. In such a way, we discussed the most recent developments on IR detectors using InAs and PbS quantum dot nanostructures. Overall, this review gives clear view on the development of suitable device architecture under prominent nanostructures to tune the photodetector performance from UV to IR spectral regions for wide-band photodetectors.