Two-dimensional silicon bismotide (SiBi) monolayer with a honeycomb-like lattice: first-principles study of tuning the electronic properties

Electronic, optical and thermoelectric properties of a novel two-dimensional SbXY (X = Se, Te; Y = Br, I) family: ab initio perspective

Recent developments in the synthesis of highly crystalline ultrathin BiTeX (X = Br, Cl) structures [Debarati Hajra et al., ACS Nano 14, 15626 (2020)] have led to the exploration of the atomic structure, dynamical stability, and electronic, optical, and thermoelectric properties of SbXY (X = Se, Te; Y = Br, I) monolayers via density functional calculations. The calculated phonon spectrum, elastic stability conditions, and cohesive energy verified the stability of the studied SbXY monolayers. The mechanical properties reveal that all studied monolayers are stable and brittle. Based on PBE (PBE + SOC) functional calculations, the SbXY monolayers are semiconductors with indirect bandgaps. The calculated bandgaps using HSE (HSE + SOC) for SbSeBr, SbSeI, SbTeBr, and SbTeI monolayers are between 1.45 and 1.91 eV, which are appealing for applications in nanoelectronic devices. The signature of the Rashba effect appears in the SbXY monolayer. The SbXY monolayers are visible-light active. Hole doping can be an efficient way to increase the electricity production of SbXY monolayers from waste heat energy. This study suggests that SbXY (X = Se, Te; Y = Br, I) monolayers represent promising new electronic, optical, and energy conversion systems.

Two-dimensional FeTe2 and predicted Janus FeXS (X: Te and Se) monolayers with intrinsic half-metallic character: tunable electronic and magnetic properties via strain and electric field

Driven by the fabrication of bulk and monolayer FeTe₂ (ACS Nano, 2020, 14, 11473-11481), we explore the lattice, dynamic stability, electronic and magnetic properties of FeTeS and FeSeS Janus monolayers using density functional theory calculations. The obtained results validate the dynamic and thermal stability of the FeTeS and FeSeS Janus monolayers examined. The electronic structure shows that the FeTe₂ bulk yields a total magnetization higher than the FeTe₂ monolayer. FeTeS and FeSeS are categorized as ferromagnetic metals due to their bands crossing the Fermi level. So, they can be a good candidate material for spin filter applications. The biaxial compressive strain on the FeTe₂ monolayer tunes the bandgap of the spin-down channel in the half-metal phase. By contrast, for FeTeS, the biaxial strain transforms the ferromagnetic metal into a half-metal. The electric field applied to the FeSeS monolayer in a parallel direction transforms the half-metal to a ferromagnetic metal by closing the gap in the spin-down channel.

First-principles investigation of electronic, mechanical and thermoelectric properties of graphene-like XBi (X = Si, Ge, Sn) monolayers

Herein, we investigate the stability and intrinsic properties of XBi (X = Ge, Si, or Sn) monolayer by using DFT calculations. SiBi is a semiconductor, while GeBi and SnBi exhibit metallic behavior. Moreover, SiBi is a good thermoelectric material with increasing temperature.

Novel two-dimensional ZnO2, CdO2 and HgO2 monolayers: a first-principles-based prediction

In this paper, the existence of monolayers with the chemical formula XO₂, where X = Zn, Cd, and Hg with hexagonal and tetragonal lattice structures is theoretically predicted by means of first principles calculations.

Investigation of strain behavior and carrier mobility of organic-inorganic hybrid perovskites: (C4H9NH3)2GeI4 and (C4H9NH3)2SnI4

Two dimensional (2D) organic-inorganic hybrid perovskites have attracted great interest due to their tunable band gap and structural stability. In this study, biaxial strain behavior and carrier mobility of monolayers (C₄H₉NH₃)₂GeI₄ and (C₄H₉NH₃)₂SnI₄ are investigated by first principles calculations. (C₄H₉NH₃)₂GeI₄ and (C₄H₉NH₃)₂SnI₄ still retain their structural stability at ε = 13% and ε = 15%, respectively. Ab initio molecular dynamics (AIMD) simulation has confirmed that the system at 300 K is still thermodynamically stable at a biaxial strain of ε = 8%. The band gaps of (C₄H₉NH₃)₂GeI₄ and (C₄H₉NH₃)₂SnI₄ calculated from the HSE06 functional are increased from 2.427 and 1.953 eV at zero strain to 3.002 and 2.626 eV at ε = 8%. Deformation potential (DP) models based on longitudinal acoustic phonon (LAP) and optical phonon (OP) scattering are used to investigate mobility. The mobility of (C₄H₉NH₃)₂GeI₄ is lower than that of (C₄H₉NH₃)₂SnI₄. It is mainly determined by the scattering from OP with lower energy and decreases sharply with an increase in biaxial strain. Compared with Pb based perovskites, (C₄H₉NH₃)₂SnI₄ exhibits high carrier mobility and thermodynamic stability.

Interfacial hybridization of Janus MoSSe and BX (X = P, As) monolayers for ultrathin excitonic solar cells, nanopiezotronics and low-power memory devices

In this work, we explored the interfacial two-dimensional (2D) physics and significant advancements in the application prospects of MoSSe monolayer when it is combined with a boron pnictide (BP, BAs) monolayer in a van der Waals heterostructure (vdWH) setup. The constructed vdWHs were found to be mechanically and dynamically stable, and they form type-II p-n heterojunctions. Thus, the photogenerated electron-hole pairs are spatially separated. In the BX/MoSSe vdWHs, the BX monolayer serves as excellent donor material for MoSSe, having an ideal donor band gap of ∼1.3 eV. The small value of the conduction band offset (CBO) between the individual monolayers in the vdWHs makes it an excellent candidate for solar energy harvesting in excitonic solar cells, where the power conversion efficiencies were calculated to be 22.97% (BP/MoSSe) and 20.86% (BAs/MoSSe). Also, more than four-fold enhancement in the out-of-plane piezoelectric coefficient (d₃₃) was observed in the MoSSe-based vdWH relative to that in the MoS₂-based vdWH owing to the intrinsic built-in vertical electric field in MoSSe. This is consistent with the out-of-plane piezoelectricity brought about by the alteration in symmetry at the metal-semiconductor Schottky junction, which has been observed experimentally [M.-M. Yang, Z.-D. Luo, Z. Mi, J. Zhao, S. P. E and M. Alexe, Nature, 2020, 584, 377-381]. The results obtained in this work provide useful insights into the design of nanomaterials for future applications in nano-optoelectronics, more efficient excitonic solar cells, and nanoelectromechanical systems (NEMS). Furthermore, this work demonstrates outstanding potential for the application of these vdWHs in superfast electronics, including low-power digital data storage and memory devices, where the tunnel current between the source and drain is effectively tunable using a normal electric field of small magnitude serving as the gate voltage.

Tunable electronic properties of the dynamically stable layered mineral Pt2HgSe3 (Jacutingaite)

Density functional theory calculations are performed in order to study the structural and electronic properties of monolayer Pt₂HgSe₃. Effects of uniaxial and biaxial strain, layer thickness, electric field and out-of-plane pressure on the electronic properties are systematically investigated.