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Wei Y, Yang Y, Chen Z, Gao P, Ma Q, Gao M, Yan C, Wu Z, Jiang Y, Chen J, Yu X, Li Z, Zhang X, Liu Y, Gao M, Sun W, Pan H. In-Situ-Generated Electron-Blocking LiH Enabling an Unprecedented Critical Current Density of Over 15 mA cm -2 for Solid-State Hydride Electrolytes. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2304285. [PMID: 37487246 DOI: 10.1002/adma.202304285] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/08/2023] [Revised: 07/03/2023] [Indexed: 07/26/2023]
Abstract
LiBH4 is a promising solid-state electrolyte (SE) due to its thermodynamic stability to Li. However, poor Li-ion conductivities at room temperature, low oxidative stabilities, and severe dendrite growth hamper its application. In this work, a partial dehydrogenation strategy is adopted to in situ generate an electronic blocking layer dispersed of LiH, addressing the above three issues simultaneously. The electrically insulated LiH reduces the electronic conductivity by two orders of magnitude, leading to a 32.0-times higher critical electrical bias for dendrite growth on the particle surfaces than that of the counterpart. Additionally, this layer not only promotes the Li-ion conductance by stimulating coordinated rotations of BH4 - and B12 H12 2- , contributing to a Li-ion conductivity of 1.38 × 10-3 S cm-1 at 25 °C, but also greatly enhances oxidation stability by localizing the electron density on BH4 - , extending its voltage window to 6.0 V. Consequently, this electrolyte exhibits an unprecedented critical current density (CCD) of 15.12 mA cm-2 at 25 °C, long-term Li plating and stripping stability for 2700 h, and a wide temperature window for dendrite inhibition from -30 to 150 °C. Its Li-LiCoO2 cell displays high reversibility within 3.0-5.0 V. It is believed that this work provides a clear direction for solid-state hydride electrolytes.
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Affiliation(s)
- Yiqi Wei
- State Key Laboratory of Silicon Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China
| | - Yaxiong Yang
- Institute of Science and Technology for New Energy, Xi'an Technological University, Xi'an, 710021, China
| | - Zichong Chen
- State Key Laboratory of Silicon Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China
| | - Panyu Gao
- Department of Materials Science, Fudan University, Shanghai, 200433, China
| | - Qihang Ma
- State Key Laboratory of Silicon Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China
| | - Mingxi Gao
- State Key Laboratory of Silicon Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China
| | - Chenhui Yan
- State Key Laboratory of Silicon Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China
| | - Zhijun Wu
- Institute of Science and Technology for New Energy, Xi'an Technological University, Xi'an, 710021, China
| | - Yinzhu Jiang
- State Key Laboratory of Silicon Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China
| | - Jian Chen
- Institute of Science and Technology for New Energy, Xi'an Technological University, Xi'an, 710021, China
| | - Xuebin Yu
- Department of Materials Science, Fudan University, Shanghai, 200433, China
| | - Zhenglong Li
- Institute of Science and Technology for New Energy, Xi'an Technological University, Xi'an, 710021, China
| | - Xin Zhang
- State Key Laboratory of Silicon Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China
| | - Yongfeng Liu
- State Key Laboratory of Silicon Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China
| | - Mingxia Gao
- State Key Laboratory of Silicon Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China
| | - Wenping Sun
- State Key Laboratory of Silicon Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China
| | - Hongge Pan
- State Key Laboratory of Silicon Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China
- Institute of Science and Technology for New Energy, Xi'an Technological University, Xi'an, 710021, China
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Abstract
We investigated the nitridation of reduced BaTiO3, BaTiO2.60H0.08, corresponding to an oxyhydride with a large concentration of O defects (>10%). The material is readily nitrided under flowing N2 gas at temperatures between 400 and 450 °C to yield oxynitrides BaTiO2.6Nx (x = 0.2−0.22) with a slightly tetragonally distorted perovskite structure, a ≈ 4.01 and c ≈ 4.02 Å, and Ti partially remaining in the oxidation state III. The tetragonal structure was confirmed from Raman spectroscopy. 14N MAS NMR spectroscopy shows a single resonance at 270 ppm, which is typical for perovskite transition metal oxynitrides. However, largely different signal intensity for materials with very similar N content suggests N/O/vacancy ordering when prolonging nitridation times to hours. Diffuse reflectance UV-VIS spectroscopy shows a reduction of the intrinsic band gap to 2.4–2.45 eV compared to BaTiO3 (~3.2 eV). Mott-Schottky measurements confirm n-type conductivity and reveal a slight negative shift of the conduction band edge from –0.59 V (BaTiO3) to ~–0.65 eV.
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