Crystallization of ZnO thin films without polymer substrate deformation via thermal dissipation annealing method for next generation wearable devices

Transparent and flexible ZnO nanorods induced by thermal dissipation annealing without polymer substrate deformation for next-generation wearable devices

The fabrication of a transparent and flexible ultraviolet photodetector based on hydrothermally grown ZnO nanorods requires an annealing step to render the sol–gel spin-coated ZnO seed layer crystalline. As high-temperature annealing deforms low-melting-point polymer substrates, we herein devised a thermal dissipation annealing (TDA) method in which heat transfer to ZnO thin films is synchronized with heat release from the polymer substrate to crystallize the ZnO seed layer without polymer substrate deformation and melting. ZnO nanorods (NRs) were hydrothermally grown on non-annealed and annealed ZnO seed layers, and NR density and diameter were shown to be higher in the latter case, as the crystallized ZnO seed layer provided heterogeneous nucleation sites for NR growth. In addition, the larger density and diameter of ZnO NRs grown on the annealed ZnO seed layer were confirmed by analysis of O 1s signal intensities. A transparent and flexible UV photodetector based on ZnO NRs grown on the annealed ZnO seed layer exhibited a higher photocurrent/dark current ratio, photosensitivity, and photoresponsivity than that fabricated using a non-annealed seed layer. Taken together, the above results suggest that the TDA method is an effective way of fabricating transparent and flexible UV photodetectors with high photosensitivity, photoresponsivity, and photocurrent stability and it means that the next generation wearable devices can be easily realized by using the TDA method.

A transparent and flexible ultraviolet (UV) photodetector based on ZnO nanorods grown onto the thermal dissipation annealed ZnO seed layer exhibited high photosensitivity, photoresponsivity, and photocurrent stability without substrate deformation.