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Zhang Y, Abdi-Jalebi M, Larson BW, Zhang F. What Matters for the Charge Transport of 2D Perovskites? ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2404517. [PMID: 38779825 DOI: 10.1002/adma.202404517] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/28/2024] [Revised: 05/13/2024] [Indexed: 05/25/2024]
Abstract
Compared to 3D perovskites, 2D perovskites exhibit excellent stability, structural diversity, and tunable bandgaps, making them highly promising for applications in solar cells, light-emitting diodes, and photodetectors. However, the trade-off for worse charge transport is a critical issue that needs to be addressed. This comprehensive review first discusses the structure of 3D and 2D metal halide perovskites, then summarizes the significant factors influencing charge transport in detail and provides a brief overview of the testing methods. Subsequently, various strategies to improve the charge transport are presented, including tuning A'-site organic spacer cations, A-site cations, B-site metal cations, and X-site halide ions. Finally, an outlook on the future development of improving the 2D perovskites' charge transport is discussed.
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Affiliation(s)
- Yixin Zhang
- School of Chemical Engineering and Technology, Tianjin University, Tianjin, 300072, China
- Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin, 300072, China
| | - Mojtaba Abdi-Jalebi
- Institute for Materials Discovery, University College London, London, WC1E 7JE, UK
| | - Bryon W Larson
- Chemistry and Nanoscience Center, National Renewable Energy Laboratory, Golden, CO, 80401, USA
| | - Fei Zhang
- School of Chemical Engineering and Technology, Tianjin University, Tianjin, 300072, China
- Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin, 300072, China
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Ma K, Sun J, Dou L. Advances and challenges in molecular engineering of 2D/3D perovskite heterostructures. Chem Commun (Camb) 2024; 60:7824-7842. [PMID: 38963168 DOI: 10.1039/d4cc02299h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 07/05/2024]
Abstract
Organic-inorganic hybrid perovskites have been intensively studied in past decades due to their outstanding performance in solar cells and other optoelectronic devices. Recently, the emergence of two-dimensional/three-dimensional (2D/3D) heterojunctions have enabled many solar cell devices with >25% power conversion efficiency, driven by advances in our understanding of the structural and photophysical properties of the heterojunctions and our ability to control these properties through organic cation configuration in 2D perovskites. In this feature article, we discuss a fundamental understanding of structural characteristics and the carrier dynamics in the 2D/3D heterojunctions and their impact factors. We further elaborate the design strategies for the molecular configuration of organic cations to achieve thorough management of these properties. Finally, recent advances in 2D/3D heterostructures in solar cells, light-emitting devices and photodetectors are highlighted, which translate fundamental understandings to device applications and also reveal the remaining challenges in ligand design for the next generation of stable devices. Future development prospects and related challenges are also provided, with wide perspectives and insightful thoughts.
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Affiliation(s)
- Ke Ma
- Global Institute of Future Technology, Shanghai Jiao Tong University, Shanghai, 200240, China.
- Davidson School of Chemical Engineering, Purdue University, West Lafayette, IN 47907, USA.
| | - Jiaonan Sun
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, Hong Kong 999077, China
- Hong Kong Institute for Clean Energy (HKICE), City University of Hong Kong, Kowloon, Hong Kong 999077, China
| | - Letian Dou
- Davidson School of Chemical Engineering, Purdue University, West Lafayette, IN 47907, USA.
- Department of Chemistry, Purdue University, West Lafayette, IN 47907, USA
- Birck Nanotechnology Center, Purdue University, West Lafayette, IN 47907, USA
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Shen W, Jiang J, He Y, Chen Z, Qiu Y, Cui H, Chen Y, Liu L, Cheng G, Chen S. Two-dimensional Cs 3Sb 2Br 9 inducing transformation of three-dimensional CsPbBr 3 to nanoplates. Chem Commun (Camb) 2024; 60:4044-4047. [PMID: 38516844 DOI: 10.1039/d4cc00117f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 03/23/2024]
Abstract
This communication describes an effective morphological control strategy involving introducing two-dimensional (2D) Cs3Sb2Br9 to induce a transformation of three-dimensional (3D) CsPbBr3 to 2D nanoplates (NPLs). By tuning the Sb/Pb ratio, 2D CsPbBr3 NPLs exhibiting a deep-blue emission centered at a wavelength of 464 nm with an FWHM of 24 nm have been produced. The absence of organic ligands in these high-quality 2D NPLs mitigate the instability issue induced by organic ligand migration and penetration, and these NPLs exhibit 80% of the initial PL intensity after 55 days.
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Affiliation(s)
- Wei Shen
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, Nanjing 210023, People's Republic of China.
| | - Jiayu Jiang
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, Nanjing 210023, People's Republic of China.
| | - Yanxing He
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, Nanjing 210023, People's Republic of China.
| | - Zhihua Chen
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, Nanjing 210023, People's Republic of China.
| | - Yue Qiu
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, Nanjing 210023, People's Republic of China.
| | - Hao Cui
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, Nanjing 210023, People's Republic of China.
| | - Yanfeng Chen
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, Nanjing 210023, People's Republic of China.
| | - Lihui Liu
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, Nanjing 210023, People's Republic of China.
| | - Gang Cheng
- State Key Laboratory of Synthetic Chemistry, HKU-CAS Joint Laboratory on New Materials, and Department of Chemistry, The University of Hong Kong, Pokfulam Road, Hong Kong, P. R. China
| | - Shufen Chen
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, Nanjing 210023, People's Republic of China.
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Sun J, Wang K, Ma K, Park JY, Lin ZY, Savoie BM, Dou L. Emerging Two-Dimensional Organic Semiconductor-Incorporated Perovskites─A Fascinating Family of Hybrid Electronic Materials. J Am Chem Soc 2023; 145:20694-20715. [PMID: 37706467 DOI: 10.1021/jacs.3c02143] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 09/15/2023]
Abstract
Halide perovskites have attracted a great amount of attention owing to their unique materials chemistry, excellent electronic properties, and low-cost manufacturing. Two-dimensional (2D) halide perovskites, originating from three-dimensional (3D) perovskite structures, are structurally more diverse and therefore create functional possibilities beyond 3D perovskites. The much less restrictive size constraints on the organic component of these hybrid materials particularly provide an exciting platform for designing unprecedented materials and functionalities at the molecular level. In this Perspective, we discuss the concept and recent development of a sub-class of 2D perovskites, namely, organic semiconductor-incorporated perovskites (OSiPs). OSiPs combine the electronic functionality of organic semiconductors with the soft and dynamic halide perovskite lattice, offering opportunities for tailoring the energy landscape, lattice and carrier dynamics, and electron/ion transport properties for various fundamental studies, as well as device applications. Specifically, we summarize recent advances in the design, synthesis, and structural analysis of OSiPs with various organic conjugated moieties as well as the application of OSiPs in photovoltaics, light-emitting devices, and transistors. Lastly, challenges and further opportunities for OSiPs in molecular design, integration of novel functionality, film quality, and stability issues are addressed.
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Affiliation(s)
- Jiaonan Sun
- Davidson School of Chemical Engineering, Purdue University, West Lafayette, Indiana 47907, United States
| | - Kang Wang
- Davidson School of Chemical Engineering, Purdue University, West Lafayette, Indiana 47907, United States
| | - Ke Ma
- Davidson School of Chemical Engineering, Purdue University, West Lafayette, Indiana 47907, United States
| | - Jee Yung Park
- Davidson School of Chemical Engineering, Purdue University, West Lafayette, Indiana 47907, United States
| | - Zih-Yu Lin
- Davidson School of Chemical Engineering, Purdue University, West Lafayette, Indiana 47907, United States
| | - Brett M Savoie
- Davidson School of Chemical Engineering, Purdue University, West Lafayette, Indiana 47907, United States
| | - Letian Dou
- Davidson School of Chemical Engineering, Purdue University, West Lafayette, Indiana 47907, United States
- Department of Chemistry, Purdue University, West Lafayette, Indiana 47907, United States
- Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, United States
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Shen W, Qiu Y, Jiang J, Chen Z, He Y, Cui H, Liu L, Cheng G, Aleshin AN, Chen S. Stable deep-blue FAPbBr 3 quantum dots facilitated by amorphous metal halide matrices. Chem Commun (Camb) 2023; 59:11137-11140. [PMID: 37650131 DOI: 10.1039/d3cc03415a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 09/01/2023]
Abstract
This communication describes a strategy to synthesize stable deep blue FAPbBr3 quantum dots (QDs) by constructing a matrix structure. Amorphous Ni2+-based metal halide matrices can stabilize QDs from both chemical and physical factors, and Ni2+ doping can further enhance their structural stability due to lattice shrinking. Such deep blue QD films exhibit stable X-ray diffraction patterns and photoluminescence even after 245 days of storage.
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Affiliation(s)
- Wei Shen
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, Nanjing 210023, People's Republic of China.
| | - Yue Qiu
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, Nanjing 210023, People's Republic of China.
| | - Jiayu Jiang
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, Nanjing 210023, People's Republic of China.
| | - Zhihua Chen
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, Nanjing 210023, People's Republic of China.
| | - Yanxing He
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, Nanjing 210023, People's Republic of China.
| | - Hao Cui
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, Nanjing 210023, People's Republic of China.
| | - Lihui Liu
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, Nanjing 210023, People's Republic of China.
| | - Gang Cheng
- State Key Laboratory of Synthetic Chemistry, HKU-CAS Joint Laboratory on New Materials, and Department of Chemistry, The University of Hong Kong, Pokfulam Road, Hong Kong, P. R. China
| | | | - Shufen Chen
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, Nanjing 210023, People's Republic of China.
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Chowdhury TH, Reo Y, Yusoff ARBM, Noh Y. Sn-Based Perovskite Halides for Electronic Devices. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2203749. [PMID: 36257820 PMCID: PMC9685468 DOI: 10.1002/advs.202203749] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 07/12/2022] [Indexed: 06/16/2023]
Abstract
Because of its less toxicity and electronic structure analogous to that of lead, tin halide perovskite (THP) is currently one of the most favorable candidates as an active layer for optoelectronic and electric devices such as solar cells, photodiodes, and field-effect transistors (FETs). Promising photovoltaics and FETs performances have been recently demonstrated because of their desirable electrical and optical properties. Nevertheless, THP's easy oxidation from Sn2+ to Sn4+ , easy formation of tin vacancy, uncontrollable film morphology and crystallinity, and interface instability severely impede its widespread application. This review paper aims to provide a basic understanding of THP as a semiconductor by highlighting the physical structure, energy band structure, electrical properties, and doping mechanisms. Additionally, the key chemical instability issues of THPs are discussed, which are identified as the potential bottleneck for further device development. Based on the understanding of the THPs properties, the key recent progress of THP-based solar cells and FETs is briefly discussed. To conclude, current challenges and perspective opportunities are highlighted.
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Affiliation(s)
- Towhid H. Chowdhury
- Department of Chemical EngineeringPohang University of Science and Technology77 Cheongam‐Ro, Nam‐GuPohang37673Republic of Korea
| | - Youjin Reo
- Department of Chemical EngineeringPohang University of Science and Technology77 Cheongam‐Ro, Nam‐GuPohang37673Republic of Korea
| | - Abd Rashid Bin Mohd Yusoff
- Department of Chemical EngineeringPohang University of Science and Technology77 Cheongam‐Ro, Nam‐GuPohang37673Republic of Korea
| | - Yong‐Young Noh
- Department of Chemical EngineeringPohang University of Science and Technology77 Cheongam‐Ro, Nam‐GuPohang37673Republic of Korea
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